LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel FEATURES • Optical output power Po = 7.0 mW • Low threshold current lth = 8 mA • Differential efficiency ηd = 0.40 W/A • Wide operating temperature range TC = −30 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 5.8 mm Document No. PL10631EJ01V0DS (1st edition) Date Published September 2006 NS CP(K) 2006 NX6311EH PACKAGE DIMENSIONS (UNIT: mm) φ 5.6+0.00 –0.03 *2 (φ 4.2) *2 1.0±0.1 BOTTOM VIEW 1 (0.3) 110˚±2˚ *2 (φ 3.55) 2 4 3 *2 (0.3) *1 Focal Point ∆ x = ±300 µ m MAX. ∆ y = ±300 µ m MAX. 5.80±0.5 2.97±0.2 15.0±1.0 1.2±0.1 3.87±0.3 φ 2.0 PIN CONNECTIONS LD 4 2 4– φ 0.45 PD 3 φ 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. 2 1 (Case) Reference Plane Data Sheet PL10631EJ01V0DS NX6311EH ORDERING INFORMATION Part Number NX6311EH-AZ Package Pin Connections 1 4-pin CAN with ball lens cap LD 4 2 PD 3 Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. Data Sheet PL10631EJ01V0DS 3 NX6311EH ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 15 mW Forward Current of LD IF 120 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC −30 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % RECOMMENDED OPERATING CONDITION Parameter Symbol Bias Current Ibias Conditions TC = 25°C, refer to below Pf (mW) Ex = 10 log P1 [dB] P0 P1 P0 Imod IF 0 Ibias 4 (mA) Data Sheet PL10631EJ01V0DS MIN. TYP. Ith +20 MAX. Unit mA NX6311EH ELECTRO-OPTICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified) Parameter Operating Voltage Symbol Vop Conditions MIN. CW, Po = 7.0 mW, TC = +25°C TYP. MAX. Unit 1.3 1.6 V CW, Po = 7.0 mW Threshold Current Ith CW, TC = +25°C CW Differential Efficiency Peak Emission Wavelength Temperature Dependence of Slope ηd λp ∆η Efficiency 2.0 8 2 20 mA 40 CW, TC = +25°C 0.25 CW 0.12 0.65 1 290 1 330 nm −3.0 1.5 dB Po = 7.0 mW, RMS (−20 dB) ∆η = 10 log ηd (@ 85°C) 0.40 0.50 W/A ηd (@ 25°C) Spectral Width σ Po = 7.0 mW, RMS (−20 dB) 1 nm Rise Time tr 20-80% 90 ps Fall Time tf 80-20% 90 ps Side Mode Suppression Ratio Relative Intensity Noise SMSR CW, Po = 7.0 mW RIN CW, Po = 7.0 mW Monitor Current Im VR = 1.5 V, Po = 7.0 mW Monitor Dark Current ID VR = 5 V Monitor PD Terminal Capacitance Ct VR = 5 V, f = 1 MHz Data Sheet PL10631EJ01V0DS 35 dB 200 6 −120 dB/Hz 2 000 µA 500 nA 20 pF 5 NX6311EH TYPICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified) OPERATING CURRENT AND THRESHOLD CURRENT vs. CASE TEMPERATURE OPTICAL OUTPUT POWER vs. FORWARD CURRENT 100 +25˚C TC = –30˚C +85˚C 5 10 0 20 30 40 50 60 Operating Current Iop (mA), Threshold Current Ith (mA) Optical Output Power Po (mW) 10 50 Iop Ith 10 5 1 –40 TEMPERATURE DEPENDENCE OF PEAK EMISSION WAVELENGTH Peak Emission Wavelength λP (nm) 1 350 1 340 1 330 1 320 1 310 1 300 1 290 1 280 –20 0 20 40 60 80 100 Case Temperature TC (˚C) Remark The graphs indicate nominal characteristics. 6 0 20 40 60 Case Temperature TC (˚C) Forward Current IF (mA) 1 270 –40 –20 Data Sheet PL10631EJ01V0DS 80 100 NX6311EH TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) FORWARD CURRENT vs. FORWARD VOLTAGE OPTICAL OUTPUT POWER vs. MONITOR CURRENT 10 Optical Output Power Po (mW) Forward Current IF (mA) 50 40 30 20 10 0 1 2 5 0 300 600 900 1 200 1 500 Monitor Current Im (µA) Forward Voltage VF (V) SPECTRUM –10 Relative Intensity –20 –30 –40 –50 –60 –70 1 296.0 1 306.0 1 316.0 Wavelength λ (nm) Remark The graphs indicate nominal characteristics. Data Sheet PL10631EJ01V0DS 7 NX6311EH REFERENCE Document Name *1 Opto-Electronics Devices Pamphlet PX10160E *1 Published by the former NEC Compound Semiconductor Devices, Ltd. 8 Document No. Data Sheet PL10631EJ01V0DS NX6311EH • The information in this document is current as of September, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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M8E 02. 11-1 Data Sheet PL10631EJ01V0DS 9 NX6311EH SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. 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