CEL NX6311EH

LASER DIODE
NX6311EH
1 310 nm AlGaInAs MQW-DFB LASER DIODE
FOR 4 Gb/s FIBER CHANNEL APPLICATION
DESCRIPTION
The NX6311EH is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATION
• 4 G fiber channel
FEATURES
• Optical output power
Po = 7.0 mW
• Low threshold current
lth = 8 mA
• Differential efficiency
ηd = 0.40 W/A
• Wide operating temperature range TC = −30 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
5.8 mm
Document No. PL10631EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006
NX6311EH
PACKAGE DIMENSIONS (UNIT: mm)
φ 5.6+0.00
–0.03
*2
(φ 4.2)
*2
1.0±0.1
BOTTOM VIEW
1
(0.3)
110˚±2˚
*2
(φ 3.55)
2
4
3
*2
(0.3)
*1
Focal Point
∆ x = ±300 µ m MAX.
∆ y = ±300 µ m MAX.
5.80±0.5
2.97±0.2
15.0±1.0 1.2±0.1
3.87±0.3
φ 2.0
PIN CONNECTIONS
LD
4
2
4– φ 0.45
PD
3
φ 2.0
*1 Focal Point: A point to get maximum optical output power from fiber.
*2 ( ) indicates nominal dimension.
2
1 (Case)
Reference
Plane
Data Sheet PL10631EJ01V0DS
NX6311EH
ORDERING INFORMATION
Part Number
NX6311EH-AZ
Package
Pin Connections
1
4-pin CAN with ball lens cap
LD
4
2
PD
3
Remarks 1. The color of ball lens cap might be observed differently.
2. The hermetic test will be performed as AQL 1.0%.
Data Sheet PL10631EJ01V0DS
3
NX6311EH
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Optical Output Power
Po
15
mW
Forward Current of LD
IF
120
mA
Reverse Voltage of LD
VR
2.0
V
Forward Current of PD
IF
10
mA
Reverse Voltage of PD
VR
20
V
Operating Case Temperature
TC
−30 to +85
°C
Storage Temperature
Tstg
−40 to +85
°C
Lead Soldering Temperature
Tsld
350 (3 sec.)
°C
Relative Humidity (noncondensing)
RH
85
%
RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Bias Current
Ibias
Conditions
TC = 25°C, refer to below
Pf
(mW)
Ex = 10 log
P1
[dB]
P0
P1
P0
Imod
IF
0
Ibias
4
(mA)
Data Sheet PL10631EJ01V0DS
MIN.
TYP.
Ith +20
MAX.
Unit
mA
NX6311EH
ELECTRO-OPTICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified)
Parameter
Operating Voltage
Symbol
Vop
Conditions
MIN.
CW, Po = 7.0 mW, TC = +25°C
TYP.
MAX.
Unit
1.3
1.6
V
CW, Po = 7.0 mW
Threshold Current
Ith
CW, TC = +25°C
CW
Differential Efficiency
Peak Emission Wavelength
Temperature Dependence of Slope
ηd
λp
∆η
Efficiency
2.0
8
2
20
mA
40
CW, TC = +25°C
0.25
CW
0.12
0.65
1 290
1 330
nm
−3.0
1.5
dB
Po = 7.0 mW, RMS (−20 dB)
∆η = 10 log
ηd (@ 85°C)
0.40
0.50
W/A
ηd (@ 25°C)
Spectral Width
σ
Po = 7.0 mW, RMS (−20 dB)
1
nm
Rise Time
tr
20-80%
90
ps
Fall Time
tf
80-20%
90
ps
Side Mode Suppression Ratio
Relative Intensity Noise
SMSR
CW, Po = 7.0 mW
RIN
CW, Po = 7.0 mW
Monitor Current
Im
VR = 1.5 V, Po = 7.0 mW
Monitor Dark Current
ID
VR = 5 V
Monitor PD Terminal Capacitance
Ct
VR = 5 V, f = 1 MHz
Data Sheet PL10631EJ01V0DS
35
dB
200
6
−120
dB/Hz
2 000
µA
500
nA
20
pF
5
NX6311EH
TYPICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified)
OPERATING CURRENT AND THRESHOLD
CURRENT vs. CASE TEMPERATURE
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
100
+25˚C
TC = –30˚C
+85˚C
5
10
0
20
30
40
50
60
Operating Current Iop (mA),
Threshold Current Ith (mA)
Optical Output Power Po (mW)
10
50
Iop
Ith
10
5
1
–40
TEMPERATURE DEPENDENCE OF
PEAK EMISSION WAVELENGTH
Peak Emission Wavelength λP (nm)
1 350
1 340
1 330
1 320
1 310
1 300
1 290
1 280
–20
0
20
40
60
80
100
Case Temperature TC (˚C)
Remark The graphs indicate nominal characteristics.
6
0
20
40
60
Case Temperature TC (˚C)
Forward Current IF (mA)
1 270
–40
–20
Data Sheet PL10631EJ01V0DS
80
100
NX6311EH
TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
FORWARD CURRENT vs.
FORWARD VOLTAGE
OPTICAL OUTPUT POWER
vs. MONITOR CURRENT
10
Optical Output Power Po (mW)
Forward Current IF (mA)
50
40
30
20
10
0
1
2
5
0
300
600
900
1 200
1 500
Monitor Current Im (µA)
Forward Voltage VF (V)
SPECTRUM
–10
Relative Intensity
–20
–30
–40
–50
–60
–70
1 296.0
1 306.0
1 316.0
Wavelength λ (nm)
Remark The graphs indicate nominal characteristics.
Data Sheet PL10631EJ01V0DS
7
NX6311EH
REFERENCE
Document Name
*1
Opto-Electronics Devices Pamphlet
PX10160E
*1 Published by the former NEC Compound Semiconductor Devices, Ltd.
8
Document No.
Data Sheet PL10631EJ01V0DS
NX6311EH
• The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
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defined above).
M8E 02. 11-1
Data Sheet PL10631EJ01V0DS
9
NX6311EH
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: contact@ncsd-hk.necel.com
Hong Kong Head Office TEL: +852-3107-7303
FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH
http://www.eu.necel.com/
TEL: +49-211-6503-0
FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500
FAX: +1-408-988-0279
Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/
0604
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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standards, please do not hesitate to contact your local representative.
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