Certificate TH97/10561QM GBJ2500 - GBJ2510 Certificate TW00/17276EM SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 25 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 ~ ~ + 1.0 ± 0.1 MECHANICAL DATA : 10 7.5 7.5 ±0.2 ±0.2 ±0.2 * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly ) 17.5 ± 0.5 11 ± 0.2 Glass Passivated Die Construction High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC High current capability Very good heat dissipation Pb / RoHS Free 13.5 ± 0.3 * * * * * * * * * 20 ± 0.3 FEATURES : 2.0 ± 0.2 0.7 ± 0.1 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL GBJ 2500 GBJ 2501 GBJ 2502 GBJ 2504 GBJ 2506 GBJ 2508 GBJ 2510 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 100 °C IF(AV) 25 A IFSM 300 A RATING Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. It 2 510 AS Maximum Forward Voltage per Diode at I F = 12.5 A VF 1.1 V Maximum DC Reverse Current Ta = 25 °C IR 10 μA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 500 μA RӨJC 0.6 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Thermal Resistance, Junction to Case Operating Junction Temperature Range Storage Temperature Range 2 Note : (1) Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink. Page 1 of 2 Rev. 04 : November 2, 2006 Certificate TH97/10561QM Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( GBJ2500 - GBJ2510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 300 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 30 with heatsink 25 20 15 10 5 0 Resistive or Inductive load 0 25 50 75 100 125 150 250 T J = 25 °C 200 150 100 SINGLE HALF SINE WAVE JEDEC METHOD 50 0 175 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE 100 10 REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES Tj = 100 °C 10 Pulse Width = 300 μs 1.0 1.0 Tj = 25 °C 0.1 Tj = 25 °C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 04 : November 2, 2006