www.eicsemi.com ABR3500 - ABR3510 AVALANCHE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 35 Amperes BR50 0.728(18.50) 0.688(17.40) FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 0.685(16.70) 1.137(28.90) 0.618(15.70) 1.114(28.30) 0.570(14.50) 0.530(13.40) 0.210(5.30) 0.200(5.10) 0.658(16.70) 0.618(15.70) MECHANICAL DATA : 0.252(6.40) 0.248(6.30) φ 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0) 0.032(0.81) 0.028(0.71) * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams 0.310(7.87) 0.280(7.11) Metal Heatsink Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% Maximum Recurrent Peak Reverse Voltage VRRM ABR 3500 50 Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Minimum Avalanche Breakdown Voltage at 100 μA VBO(min.) 100 150 250 450 700 900 1100 V Maximum Avalanche Breakdown Voltage at 100 μA VBO(max.) 550 600 700 900 1150 1350 1550 V RATING SYMBOL Maximum Average Forward Current Tc = 50°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing at ( t < 8.3 ms. ) Maximum Forward Voltage per Diode at I F = 17.5 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range ABR 3501 100 ABR 3502 200 ABR 3504 400 ABR 3506 600 ABR 3508 800 ABR 3510 1000 UNIT V IF(AV) 35 A IFSM 400 A I t VF 2 660 A2S 1.1 V IR 10 μA IR(H) 200 μA RθJC 1.5 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Notes : 1 ) Thermal resistance from junction to case with units mounted on a7.5" x 3.5" x 4.6" ( 19 x 9 x 11.8 cm )Al. plate. Page 1 of 2 Rev. 03 : November 20, 2008 www.eicsemi.com RATING AND CHARACTERISTIC CURVES ( ABR3500 - ABR3510 ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 400 50 HEAT-SINK MOUNTING, Tc 7.5"x3.5"x4.6" THK (19cm x 9cm x 11.8cm) Al. Finned Plate 40 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 30 20 10 0 0 25 50 75 100 125 150 240 160 8ms SINGLE HALF SINE WAVE JEDEC METHOD 80 0 175 T J = 55 °C 320 1 CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 T J = 100 °C REVERSE CURRENT, MICROAMPERES FORWARD CURRENT, AMPERES 100 10 Pulse Width = 300 μs 1 % Duty Cycle 1.0 1.0 T J = 25 °C 0.1 T J = 25 °C 0.01 0 0.1 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : November 20, 2008