1N4148WS : SMALL SIGNAL FAST SWITCHING DIODE - PRV

Certificate TH97/10561QM
1N4148WS
Certificate TW00/17276EM
SMALL SIGNAL
FAST SWITCHING DIODE
SOD-323
PRV : 100 Volts
IO : 150 mA
1.35
1.15
0.40
0.25
1.80
1.60
FEATURES :
1.10
0.80
0.15 (max)
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
* Marking Code : " W2"
2.80
2.30
Dimensions in millimeters
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Peak Reverse Voltage
Average Rectified Current Half Wave
Rectification with Resistive Load at f ≥ 50 Hz
Surge Forward Current at t < 1 s and Tj = 25 °C
Power Dissipation at T amb = 25 °C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Rating at Ta =
Unit
75
100
V
V
150
1)
mA
350
IFSM
Ptot
RthJA
Tj
TSTG
mA
mW
°C/W
°C
°C
1)
200
650 1)
150
-65 to + 150
25 °C unless otherwise specified)
Test Conditions
Forward Voltage
Leakage Current
IF = 10 mA
VR = 20 V
VR = 75 V
VR = 20 V, Tj =150 °C
VF = V R = 0 V
tp = 0.1µs, Rise Time < 30ns,
fp = 5 to 100 kHz
IF = 10 mA, I R = 1 mA,
VR = 6 V, RL = 100 Ω
f = 100 MHz, VRF = 2 V
Rectification Efficiency
Value
VR
VRM
IF(AV)
Parameter
Capacitance
Voltage Rise when Switching On
(tested with 50 mA pulses)
Reverse Recovery Time
Symbol
Symbol
Min.
Typ.
Max.
Unit
VF
IR
IR
IR
Ctot
-
-
1.0
25
5.0
50
4
V
nA
µA
µA
pF
Vfr
-
-
2.5
V
Trr
-
-
4
ns
ηv
0.45
-
-
-
Note : (1) Valid provided that electrodes are kept at ambient temperature.
Page 1 of 3
Rev. 06 : May 22, 2006
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES (1N4148WS)
Forward charecteristics
Dynamic forward resistance
versus forward current
mA
V
103
104
5
T j = 25 °C
f = 1 kHz
2
102
T j = 100 °C
103
5
T j = 25 °C
iF
rF
10
2
102
5
1
2
10
-1
10
5
2
10-2
0
1
2V
1
10-2
10-1
10
1
VF
102
mA
IF
Admissible power dissipation
versus ambient temperture
Relative capacitance
versus reverse voltage
For conditions, see footnote in table
"Absolute Maximum Ratings"
mW
1000
900
C tot (V R ) 1.1
C tot (0 V)
800
P tot
700
T j = 25 °C
f = 1 kHz
1.0
600
500
0.9
1N4148
400
300
0.8
200
1N4148W
0.7
100
0
0
Page 2 of 3
100
T amb
200 °C
0
2
4
6
VR
8
10 V
Rev. 06 : May 22, 2006
Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES (1N4148WS)
Leakage Current
versus junction temperature
nA
104
5
2
103
IR
5
2
102
5
2
VR = 20 V
10
5
2
1
0
200 °C
100
Tj
Admissible repetitive peak forward current versus pulse duration
For conditions, see footnote in table " Absolute Maximum Ratings "
A
100
I
ν= t p /T
5
4
T= 1/f p
3
I FRM
2
tp
10
n= 0
I FRM
t
T
5
4
3
0.1
2
0.2
1
0.5
5
4
3
2
0.1
10-5
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10 s
tp
Page 3 of 3
Rev. 06 : May 22, 2006