RUS6030M

RUS6030M
High Efficiency Barrier Rectifier
Features
• VRRM= 60V
IF(AV)=2x 15A
Pin Description
6
8 7
• HEBR® Technology
• Ultra-Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Lead Free and Green Devices Available
5
3 4
1 2
PIN1
PIN1
PDFN5060
Applications
PIN1,2
A1
• Rectifiers in SMPS
• AC/DC Adaptors
• DC-DC Converters
PIN5,6,7,8
K1/K2
PIN3,4
A2
High Efficiency Barrier Rectifier
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Maximum Repetitive Reverse Voltage
60
V
Maximum DC Reverse Voltage
60
V
RMS Reverse Voltage
42
V
per Device
30
A
per Diode
15
A
430
A
Common Ratings (TA=25°C Unless Otherwise Noted)
VRRM①
VR①
VR(RMS)①
IF(AV)
Average Rectified Forward Current, TC=130°C
IFSM
Peak Forward Surge Current,8.3ms Half Sine Wave
TSTG
Storage Temperature Range
-55 to 150
°C
Operating Junction Temperature Range
-55 to 150
°C
Thermal Resistance-Junction to Case
1
°C/W
Thermal Resistance-Junction to Ambient
30
°C/W
TJ
Mounted on Large Heat Sink
RθJC
RθJA②
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2014
1
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RUS6030M
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RUS6030M
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
V(BR)R③
IR③
VF
③
Notes:
Reverse Breakdown Voltage per
Diode
Reverse Leakage Current per
Diode
Forward Voltage Drop per Diode
IR=300µA
VR=60V, TC=25°C
60
V
100
VR=60V, TC=125°C
300
µA
5
mA
IF=2A, TC=25°C
0.32
0.35
V
IF=5A, TC=25°C
0.39
0.43
V
IF=10A, TC=25°C
0.48
0.52
V
IF=15A, TC=25°C
0.54
0.59
V
IF=15A, TC=125°C
0.50
0.54
V
①For TA > 25°C the derating of VR and IF has to be considered.
②Polymide PCB, 2oz. Copper. Cathode pad dimensions 18.8mm x 14.4mm. Anode pad dimensions
5.6mm x 14.4mm.
③Pulse test, pulse width≤300µs, duty cycle≤2%.
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2014
2
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RUS6030M
Ordering and Marking Information
Device
Marking
Package
RUS6030M
RUS6030M
PDFN5060
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2014
Packaging Quantity Reel Size Tape width
Tape&Reel
3
3000
13''
12mm
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RUS6030M
Power Derating
60
50
F=1mHz
1000
40
DC
30
100
20
10
0
0
20
40
60
80
100
120
140
10
0.1
160
1
10
100
1000
VR – Reverse Voltage (V)
TC - Case Temperature (°C)
Reverse Current
Forward Voltage
10000
IR – Reverse Current (µA)
IF - Forward Current (A)
Junction Capacitance
10000
CJ - Junction Capacitance (pF)
IFAV – Average Forward Current (A)
Typical Characteristics
10
TJ=125°C
1000
TJ=125°C
1
TJ=25°C
0.1
TJ=25°C
100
10
0.01
0
0.2
0.4
0.6
0
0.8
10
VF - Forward Voltage (V)
20
30
40
50
60
VR - Reverse Voltage
ZthJC - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
1
0.1
Single Pulse
0.01
RθJC=1°C/W
0.001
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2014
4
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RUS6030M
Package Information
PDFN5060
D2
0.04REF
H
C
L
K
E
E1
E2
1.20REF
L1
A
L1
e
b
a
Land Pattern
( Only for Reference)
4.32
0.61
1.27
3.91
6.61
3.81
4.52
D1
1.27
4.42
SYMBOL
A
b
c
D1
D2
E
E1
E2
e
H
k
L
L1
a
MM
MIN
0.90
0.33
0.20
4.80
3.61
5.90
5.65
3.38
0.41
1.10
0.51
0.06
0°
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2014
NOM
1.00
0.42
0.25
4.90
3.79
6.00
5.75
3.58
1.27 BSC
0.51
0.61
0.13
INCH
MAX
1.10
0.51
0.30
5.00
3.96
6.10
5.85
3.78
MIN
0.035
0.013
0.008
0.189
0.142
0.232
0.222
0.133
0.61
0.016
0.043
0.020
0.002
0°
0.71
0.20
12°
5
NOM
0.039
0.017
0.010
0.193
0.149
0.236
0.226
0.141
0.005 BSC
0.020
0.024
0.005
MAX
0.043
0.020
0.012
0.197
0.156
0.240
0.230
0.149
0.024
0.028
0.008
12°
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RUS6030M
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Ruichips Semiconductor Co., Ltd
Rev. A– JAN., 2014
6
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