MITSUBISHI LSIs M5M29GB/T320WG PRELIMINARY 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY Notice : This is not a final specification. Some parametric limits are subject to change. DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T320WG are 3.3V-only high speed 33,554,432-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature. The BGO feature of the device allows Program or Erase operations to be performed in one bank while the device simultaneously allows Read operations to be performed on the other bank. This BGO feature is suitable for mobile and personal computing, and communication products. The M5M29GB/T320WG are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 6 x 8 balls CSP(0.8mm ball pitch) . FEATURES Organization Boot Block M5M29GB320WG M5M29GT320WG ................................. 2,097,152 word x 16bit ................................. 4,194,304 word x 8 bit Other Functions Soft Ware Command Control Selective Block Lock Erase Suspend/Resume Program Suspend/Resume Status Register Read Alternating Back Ground Program/Erase Operation Between Bank(I) ,Bank(II),Bank(III) and Bank(IV) .............................. VCC = 2.7 ~ 3.6V Supply voltage ................................ Access time ........................ Bottom Boot ........................ Top Boot .............................. 80ns (Vcc=3.0~3.6V) 90ns (Vcc=2.7~3.6V) Power Dissipation ................................. 72 mW (Max. at 5MHz) Read (After Automatic Power saving) .......... 0.33µW (typ.) Program/Erase ................................. 126mW (Max.) ................................. 0.33µW (typ.) Standby Deep power down mode ....................... 0.33µW (typ.) Auto program for Bank(I) and Bank(II) Program Time ................................. 4ms (typ.) Program Unit (Byte Program) ......................... 1word/1byte (Page Program) ......................... 128word/256byte Auto program for Bank(III) and Bank(IV) Program Time ................................. 4ms (typ.) ................................. 128word/256byte Program Unit Auto Erase ................................. 40 ms (typ.) Erase time Erase Unit Bank(I) Boot Block ..................... 4Kword/8Kbyte x 2 Parameter Block .............. 4Kword/8Kbyte x 6 Main Block ...................... 32Kword/64Kbyte x 7 Bank(II) Main Block ...................... 32Kword/64Kbyte x 8 Bank(III) Main Block ...................... 32Kword/64Kbyte x 24 Bank(IV) Main Block ...................... 32Kword/64Kbyte x 24 Package 8mm x 10mm CSP (Chip Scale Package) 6 x 8 balls, 0.8mm ball pitch APPLICATION Code Strage Digital Cellular Phone Telecommunication Mobile Computing Machine PDA (Personal Digital Assistance) Car Navigation System Video Game Machine Program/Erase cycles ......................................... 100Kcycles PIN CONFIGURATION (TOP VIEW) 8.0mm INDEX A A3 A7 RY/BY# WE# A9 A13 B A4 A17 WP# RP# A8 A12 C A2 A6 A18 NC A10 A14 D A1 A5 A20 A19 A11 A15 E A0 DQ0 DQ2 DQ5 DQ7 A16 F CE# DQ8 DQ10 DQ12 DQ14 BYTE# G OE# DQ9 DQ11 VCC DQ13 DQ15 /A-1 H GND DQ1 DQ3 DQ4 DQ6 GND 1 2 3 4 5 6 Outline 48pin CSP (0.8mm ball pitch) NC : NO CONNECTION 1 Rev.0.2_48a_bazz MITSUBISHI LSIs PRELIMINARY M5M29GB/T320WG 33,554,432-BIT (4,194,304-WORD BY 8-BIT / 2,097,152-WORD BY16-BIT) Notice : This is not a final specification. Some parametric limits are subject to change. CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY Keep safety first in your circuit designs! -Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii)prevention against any malfunction or mishap. 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Copyright 2002 Mitsubishi Electric Corporation. All rights reserved. Rev.0.2_48a_bazz