EM MICROELECTRONIC - MARIN SA 608003 Application Note 608003 Title: STORAGE ELEMENTS STS/LTS SUPERVISING Product Family: EM850X Part Number: EM8500 Keywords: Harvesting, Solar, TEG, MPPT, Configuration, Setup, Super capacitors, Secondary Battery, Primary Battery ABSTRACT The EM8500 offers a NVM containing all the configuration parameters. This document describes how to setup the registers in NVM linked to the storage elements connected to STS & LTS: • Type of battery: rechargeable (secondary battery) or non-rechargeable (primary battery) • Under voltage protection enabled or disabled • Voltage level detection: o maximum/minimum battery level settings o maximum application voltage • Voltage measurement timing settings ABBREVIATIONS NVM MCU STS LTS HRV TEG MPP Vmpp Vov BAT_LOW HRV_LOW VLD Vref Vlvl Vbat VSUP VAUX[i] Csup Caux[i] Non-Volatile-Memory Microcontroller Unit Short term storage element (capacitor connected to VDD_STS) Long term storage element (rechargeable battery connected to VDD_LTS) Harvester, main source of energy (solar or TEG) Thermal Electrical Generator (Maximum Power Point) This operating point is reached when the harvester delivers the maximum power (Pmpp) in a given condition HRV output voltage at MPP HRV open voltage (when the EM8500 DCDC converter is disabled) Flag indicating that the battery is in under-voltage condition Flag indicating that the HRV is under the minimum power level (HRV low mode when at 1) Voltage Level Detector Voltage level detector reference level Voltage level detector LSB (71.88mV) Battery voltage connected to VDD_LTS Main output supply for application 2 independent auxiliary supplies for application Decoupling capacitor on VSUP 3 decoupling capacitors on VAUX[i] Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 1 www.emmicroelectronic.com 420010-D01, 2.0 608003 1 SCOPE The EM8500 addresses two main types of mass storage elements connected to LTS: 1. Rechargeable a. secondary battery b. or super capacitor 2. Non-rechargeable for battery life time enhancement (so called primary cell mode) a. primary battery On STS side, a standard capacitor in the range of 10uF to few 100uF is connected. The EM8500 has several registers to setup the storage elements supervising: 1. Type of LTS used 2. Under and over voltage protection level of LTS settings 3. Regulation voltage level of STS when disconnected from LTS 4. Period of voltages measurement settings The following registers are involved for that action: Register name Address Description prim_cell_connect: force the connection of STS to LTS in primary cell mode when at ‘1’ reg_lts_cfg 0x06 prim_cell: set the device in primary cell mode when ‘1’ no_bat_protect: under voltage protection disabled when at ‘1’ Absolute maximum voltage level of the battery reg_v_bat_max_hi 0x07 Maximum voltage of the battery, form an hysteresis with v_bat_max_hi reg_v_bat_max_lo 0x08 reg_v_bat_min_hi_dis 0x09 reg_v_bat_min_hi_con 0x0A reg_v_bat_min_lo 0x0B Minimum battery and application voltage when STS and LTS are disconnected, form an hysteresis with v_bat_min_lo Minimum battery and application voltage when STS and LTS are connected, form an hysteresis with v_bat_min_lo Absolute minimum value of the battery and the application reg_v_apl_max_hi 0x0C Absolute maximum voltage of the application reg_v_apl_max_lo 0x0D reg_t_sts_period 0x02 reg_t_lts_period 0x03 reg_t_hrv_low_cfg Maximum voltage of the application, form an hysteresis with v_apl_max_hi Period between two voltage level measurements of STS, used only when STS and LTS are disconnected Period between two voltage level measurements of LTS t_lts_hrv_low_period: Define the period between two voltage level measurements of LTS in HRV low mode Table 1: List of Registers Related to Storage Elements Supervising 0x17 Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 2 www.emmicroelectronic.com 420010-D01, 2.0 608003 The default value after reset or start-up of the registers listed in Table 1 is contained in a NVM memory at the following related addresses: Register name Register Related address in NVM Address eeprom6 0x46 reg_lts_cfg 0x06 reg_v_bat_max_hi 0x07 eeprom7 0x47 reg_v_bat_max_lo 0x08 eeprom8 0x48 reg_v_bat_min_hi_dis 0x09 eeprom9 0x49 reg_v_bat_min_hi_con 0x0A eeprom10 0x4A reg_v_bat_min_lo 0x0B eeprom11 0x4B reg_v_apl_max_hi 0x0C eeprom12 0x4C reg_v_apl_max_lo 0x0D eeprom13 0x4D reg_t_sts_period 0x02 eeprom2 0x42 reg_t_lts_period 0x03 eeprom3 0x43 reg_t_hrv_low_cfg 0x17 eeprom23 0x57 Table 2: Mapping of Registers in EEPROM Note: offset between the register addresses and related address in NVM is 0x40 Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 3 www.emmicroelectronic.com 420010-D01, 2.0 608003 2 SUPERVISING REGISTERS SETTINGS SEQUENCE We advise calculating the different parameters in the following order: 1. Chapter 4: The operating mode: rechargeable battery, primary cell mode, battery protection (reg_lts_cfg) 2. Chapter 5: The absolute min/max voltages (reg_v_bat_max_hi, reg_v_apl_max_hi, reg_v_bat_min_lo) 3. Chapter 6: The capacitor value connected on VDD_STS (Csts). 4. Chapter 7: The VDD_STS supervisory period Tsts_period (reg_t_sts_period) 5. Chapter 0: The v_bat_min hysteresis (reg_v_bat_min_hi_dis, reg_v_bat_min_hi_con) 6. Chapter 9: The value of v_apl_max_lo (reg_v_apl_max_lo) 7. Chapter 10: The value of v_bat_max_lo (reg_v_bat_max_lo) 8. Chapter 11: The VDD_LTS supervisory period Tlts_period and Tlts_hrv_low_period (reg_t_lts_period, reg_t_hrv_low_cfg) Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 4 www.emmicroelectronic.com 420010-D01, 2.0 608003 3 VLD REFERENCE The VLD is used to compare the current state of the voltages VDD_STS or VDD_LTS with a selected reference. The following registers select the references related to a voltage level: reg_v_bat_max_hi: reference v_bat_max_hi reg_v_bat_max_lo: reference v_bat_max_hi reg_v_bat_min_hi_dis: reference v_bat_min_hi when VDD_STS & VDD_LTS are disconnected reg_v_bat_min_hi_con: reference v_bat_min_hi when VDD_STS & VDD_LTS are connected reg_v_bat_min_lo: reference v_bat_min_lo reg_v_apl_max_hi: reference v_apl_max_hi reg_v_apl_max_lo: reference v_apl_max_lo These registers set the related reference level as follows: Vref Vlvl reg 1 Equation 1: VLD Reference Calculation The precision of Vlvl is as follows: Vlvl MIN(1) TYP MAX(1) 69 mV 73 mV 76.2 mV Table 3: Vlvl Precision (1) These values are based on a typical spread of voltage level detector. If the reference level is the maximum value of the hysteresis (_hi), the maximum value of Vlvl is used to calculate the related register. If the reference level is the minimum value of the hysteresis (_lo), the minimum value of Vlvl is used to calculate the related register. Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 5 www.emmicroelectronic.com 420010-D01, 2.0 608003 4 OPERATING MODE SETTINGS 4.1 Battery type The first step is to set the type of battery used: Rechargeable (secondary cell battery; reg_lts_cfg.prim_cell = ‘0’) Non-rechargeable (primary cell battery; reg_lts_cfg.prim_cell = ‘1’) 4.2 Battery protection By default the EM8500 checks the under voltage condition of the battery. It is possible to disable this function by setting the register reg_lts_cfg.no_bat_protect to ‘1’. In this condition, the EM8500 will try indefinitely to start-up on the battery voltage. If there is no energy from the HRV, the EM8500 will start-up by connecting VDD_LTS to VDD_STS, execute the boot sequence, as VDD_LTS is lower than v_bat_min_lo it will disconnect VDD_STS and VDD_LTS, then VDD_STS will collapse and enter in power on reset. Therefore, the EM8500 will start-up again and loop in this sequence until energy is back from the HRV. Note: We advise to avoid setting reg_lts_cfg.no_bat_protect to ‘1’ with a rechargeable battery; it can damage the battery. It is preferable to do it only with a super capacitor. 4.3 Force connection of LTS to STS in primary cell mode The register reg_lts_cfg.prim_cell_connect forces the connection of LTS to STS in primary cell mode (reg_lts_cfg.prim_cell = ‘1’). If this bit is set to ‘1’ in the NVM (address 0x46), the connection will be effective after the start-up sequence. This bit has no effect when reg_lts_cfg.prim_cell = ‘0’ or if VDD_LTS is lower than v_bat_min_lo. Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 6 www.emmicroelectronic.com 420010-D01, 2.0 608003 5 ABSOLUTE VALUES SETTINGS There are 3 absolute values to set up in the EM8500: 1. The maximum battery voltage: v_bat_max_hi 2. The maximum application voltage: v_apl_max_hi 3. The minimum battery voltage (considered also as minimum application voltage): v_bat_min_lo 5.1 Maximum battery voltage This is the absolute overvoltage limit of the battery. When the supply VDD_LTS reaches this voltage, the EM8500 stops charging the battery. The register reg_v_bat_max_hi defines the absolute maximum battery voltage and is calculated as follows: v_bat_max_hi reg_v_bat_max_hi trunc 1 1 maxVlvl Equation 2: reg_v_bat_max_hi Calculation 5.2 Maximum application voltage This level is used when the maximum battery voltage is higher than the voltage the application can afford. If VDD_STS is higher than this level, the EM8500 will automatically enable the LDO connected on VSUP to protect the application against overvoltage. The register reg_v_apl_max_hi defines the absolute maximum application voltage and is calculated as follows: v_apl_max_hi reg_v_apl_max_hi trunc 1 1 max V lvl Equation 3: reg_v_apl_max_hi Calculation If the application maximum voltage is higher than the maximum battery voltage, reg_v_apl_max_hi shall be set to 0x3F and reg_v_apl_max_lo shall be set to 0x3E. In this condition these two registers will be ignored. 5.3 Minimum battery voltage The absolute under voltage condition level of the battery is v_bat_min_lo. When VDD_LTS is below that level, the battery is in protected mode and the flag BAT_LOW stays at ‘1’ until VSUP is on. In that condition it is impossible to use the battery as source of energy, only the harvester can supply the application. The register reg_v_bat_min_lo defines this level as follows: v_bat_min_lo reg_v_bat_min_lo trunc 1 min V lvl Equation 4: reg_v_bat_min_lo Calculation Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 7 www.emmicroelectronic.com 420010-D01, 2.0 608003 6 SHORT TERM STORAGE CAPACITOR SETTING If the application is supposed to always run on LTS (VDD_STS always connected to VDD_LTS), we advise to use Csts= 10uF. But if STS supplies the application without the help of the battery or super capacitor, as it is the case in primary cell mode, the value of Csts shall be carefully calculated. When VAUX[i] or VSUP is enabled, the decoupling capacitors Caux[i] or Csup is suddenly connected to Csts. Therefore the transfer of charges from Csts to the decoupling capacitor leads to a drop on VDD_STS. We advise to avoid a drop higher than 10% of VDD_STS. Thus, Csts shall be 10 times bigger than the total amount of decoupling capacitors enabled in the same time. For instance if VSUP and all VAUX[i] are enabled in the same time: CSTS 10 CSUP C AUX [ 0 ] C AUX [1] C AUX [ 2] Equation 5: Csts Calculaton; all Decoupling Capacitors Enabled Together Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 8 www.emmicroelectronic.com 420010-D01, 2.0 608003 7 STS SURVEY PERIOD The survey period affects the power loss of the VLD during the measurement of STS. Longer this period, lower the power loss. The register reg_t_sts_period is a number of t_frame of 1ms and is calculated as follows: 9 vld sts _ period in_min loss in_min loss T P t _ frame 3 10 4 P VLD 4 P VLD Equation 6: STS Survey Period Calculation The parameter Pvld (in [W]) is the power dissipated by the VLD when enabled: 3uW (constant) The parameter t_frame (in [s]) is the minimum period between 2 measurements: 1ms (constant) The parameter Pin_min (in [W]) is the minimum power the EM8500 can harvest before entering in HRV_LOW mode. The parameter VLDloss (without unit) is the rate of power the user accepts to lose in the VLD measurement of VDD_STS. Important note: when VDD_STS is connected to VDD_LTS Tsts_period is not used anymore. The supervisory period is set by Tlts_period instead (see chapter 11). Therefore, there is no VLDloss due to STS measurement in that condition. The register reg_t_sts_period shall be selected according to the following table to be the closest to Tsts_period: reg_t_sts_period Tsts_period 000 1ms 001 2ms 010 8ms 011 16ms 100 32ms 101 64ms 110 128ms 111 256ms Table 4: Tsts_period Related Registers Selection 7.1 Example of STS survey period calculation Considering that the EM8500 has been configured to stop harvesting energy when the input power is below 2uW: Pin_min = 2uW We accept to lose 1% of power in the VLD measurement of VDD_STS: VLDloss = 0.01 Tsts _ period 3 10 9 3 37 . 5 10 4 2 10 6 0.01 Equation 7: Example of STS Survey Period Calculation According to the Table 4, the closest value to 37.5ms is 32ms, corresponding to reg_t_sts_period = “100”. In that condition the power loss in the VLD would be about 1.2%. Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 9 www.emmicroelectronic.com 420010-D01, 2.0 608003 8 HYSTERESIS ON V_BAT_MIN SETTINGS The voltage level v_bat_min_hi defines an hysteresis with v_bat_min_lo. It has a particular importance to supervise STS when VDD_STS and VDD_LTS are disconnected; in primary cell mode or when VDD_LTS falls below v_bat_min_lo. 8.1 Level v_bat_min_hi with VDD_STS and VDD_LTS disconnected The level v_bat_min_hi is set by the register reg_v_bat_min_hi_dis when VDD_STS and VDD_LTS are disconnected. When the EM8500 DCDC converter does not charge Csts and VDD_STS and VDD_LTS are disconnected, Csts is the only source of energy for the application. Depending on the current consumption of the application in that condition, Csts will drop more or less quickly. If VDD_STS falls below the level v_bat_min_lo, the EM8500 will stop supplying the application; it will disable VSUP and VAUX[i]. As soon as the VLD measures VDD_STS below v_bat_min_hi_dis, the EM8500 DCDC converter is enabled to recover VDD_STS as shown in the following figures: Figure 1: VDD_STS Measurement Toward v_bat_min_hi_dis The voltage difference between v_bat_min_hi_dis and v_bat_min_lo shall be higher than the voltage drop on VDD_STS between 2 Tsts_period with the maximum current consumption. The following equation calculates v_bat_min_hi_dis: v_bat_min_hi_dis 2 Tsts _ period I max Csts v_bat_min_lo Equation 8: v_bat_min_hi_dis Calculation Imax (in [A]) is the maximum current consumption on application side. Tsts_period (in [s]) is the period between 2 VDD_STS VLD measurements defined in chapter 7. Csts (in [F]) is the capacitor connected to VDD_STS. 8.2 Example of v_bat_min_hi_dis calculation Considering that Tsts_period is 32ms, Csts is 100uF, the maximum consumption of the application is 1mA and the absolute minimum battery voltage is 1.2V. According to the Equation 8, the value of v_bat_min_hi_dis shall be at least 1.84V. The register reg_v_bat_min_hi_dis is calculated as follows: v_bat_min_hi _ dis reg_v_bat_min_hi_dis trunc 1 1 maxVlvl Equation 9: Register reg_v_bat_min_hi_dis Calculation In our example the value of reg_v_bat_min_hi_dis = 24 (0x18 in hexadecimal) Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 10 www.emmicroelectronic.com 420010-D01, 2.0 608003 8.3 Level v_bat_min_hi with VDD_STS and VDD_LTS connected The level v_bat_min_hi is set by the register reg_v_bat_min_hi_con when VDD_STS and VDD_LTS are connected. This level defines a hysteresis with v_bat_min_lo. As LTS has a huge capacity compare to Csts, this parameter is less crucial than v_bat_min_hi_dis. This hysteresis delimitates the VDD_LTS voltage range wherein the flag BAT_LOW is set to ‘1’ before stopping the supply of the application (disabling VSUP and VAUX[i]). The difference between v_bat_min_hi_con and v_bat_min_lo is depending on the battery discharge curve. There is only one strict rule: reg_v_bat_min_hi _ con reg_v_bat_min_lo 1 Equation 10: reg_v_bat_min_hi_con Toward reg_v_bat_min_lo Conditions Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 11 www.emmicroelectronic.com 420010-D01, 2.0 608003 9 LEVEL V_APL_MAX_LO SETTINGS As already written in chapter 5.2, the levels v_apl_max_lo and v_apl_max_hi shall be set to 0x3F if the application can afford the absolute maximum battery voltage. In that condition, these two levels are ignored. If it is not the case, and if VDD_STS and VDD_LTS are disconnected, the level v_apl_max_lo calculation shall fulfill 2 conditions: 1. The difference between v_apl_max_lo and v_bat_min_hi_dis shall be enough high to let the EM8500 DCDC charging LTS a minimum of time. 2. The hysteresis between v_apl_max_lo and v_apl_max_hi shall be enough high to ensure VDD_STS will never rise above v_apl_max_hi. 9.1 Level v_apl_max_lo toward v_bat_min_hi When VDD_LTS and VDD_STS are disconnected, the EM8500 DCDC charges alternatively STS and LTS. When the VLD detects that STS reached v_apl_max_lo, the EM8500 DCDC stops charging STS and starts charging LTS. In that condition STS is the only source of energy of the application. It drops down to v_bat_min_hi_dis and then the EM8500 charges back STS. To charge the battery in an efficient way, the period during which the EM8500 DCDC charges LTS shall be as long as possible. Figure 2: Effect of v_apl_max_lo Level on VDD_LTS Charge Phase Period Considering Tlts_charge_min is the minimum period we want to guarantee, the condition v_apl_max_lo level shall fulfill toward v_bat_min_hi_dis is the following: v_apl_max_lo Tlts_charge_min I max Csts v_bat_min_hi _ dis Equation 11: v_apl_max_lo toward v_bat_min_hi_dis Condition Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 12 www.emmicroelectronic.com 420010-D01, 2.0 608003 9.2 Level v_apl_max_lo toward v_apl_max_hi When the EM8500 DCDC charges STS at full power, VDD_STS rising edge can be sharp and therefore, depending on Tsts_period, rise above v_apl_max_hi if there is not enough hysteresis between v_apl_max_lo and v_apl_max_hi. Figure 3: VDD_STS Measurement Toward v_apl_max_lo The sharpness of VDD_STS rising edge is depending on the maximum power the EM8500 DCDC can harvest. To have enough margins, we consider that the EM8500 DCDC has an ideal efficiency of 100%. When the EM8500 DCDC converter charges STS, the maximum power that the EM8500 DCDC can deliver is limited even if the HRV can potentially deliver more power (when charging LTS there is no such limitation). The maximum power Pin_max that the DCDC converters can deliver to STS depends mainly on Vmpp in best case conditions, meaning at maximum luminescence for a solar cell for instance. Pin_max is calculated as follows: Pin_max 6.65 103 Vmpp2 Equation 12: Pin_max Caclulation Note: the chapter 2 of the document e8500_app_note_hrv_param.pdf describes how to calculate Vmpp. The level v_apl_max_lo shall fulfill the following equation to ensure VDD_STS will never rise above v_apl_max_hi when the DCDC converter charges STS. v_apl_max_lo v _ apl _ max_ hi 2 4 Tsts _ period Pin_max Csts Equation 13: v_apl_max_lo toward v_apl_max_hi Condition 9.3 Level v_apl_max_lo adjustment The level v_apl_max_lo shall fulfill both Equation 11 and Equation 13. If it is not the case, there are two main ways to correct it: 1. Reduce Tsts_period: it impacts the efficiency at very low power range; it is in the majority of the cases negligible. The value of VLDloss shall be reconsidered in Equation 6. 2. Increase Csts: it can impacts the mechanical size of the component and its cost. The solution 1 is preferable. Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 13 www.emmicroelectronic.com 420010-D01, 2.0 608003 9.4 Level v_apl_max_lo with VDD_STS and VDD_LTS connected If VDD_LTS and VDD_STS are always connected, the calculation of v_apl_max_lo is less critical and shall only fulfill the following rule: reg_v_apl_max_lo reg_v_apl_max_hi 1 Equation 14: reg_v_apl_max_lo toward reg_v_apl_max_hi Condition Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 14 www.emmicroelectronic.com 420010-D01, 2.0 608003 10 LEVEL V_BAT_MAX_LO SETTINGS If the application can afford the maximum battery voltage, v_apl_max_lo and v_apl_max_hi are set to 0x3F and respectively 0x3E and not used. In that case, the conditions defined by the Equation 11 and Equation 13 shall be applied to v_bat_max_lo as follows: Tlts_charge_min I max Csts v_bat_min_hi_dis v_bat_max_lo v_bat_max_hi 2 4 Tsts _ period Pin_max Csts Equation 15: v_bat_max_lo Conditions; v_apl_max_lo and v_apl_max_hi not Used If both conditions of Equation 15 cannot be fulfilled, the corrective actions are the same then the one defined in chapter 9.3. 10.1 Level v_bat_max_lo with VDD_STS and VDD_LTS connected If VDD_LTS and VDD_STS are always connected or if v_apl_max_lo and v_apl_max_hi are used, the calculation of v_bat_max_lo is less critical and shall only fulfill the following rule: reg_v_bat_max_lo reg_v_bat_max_hi 1 Equation 16: reg_v_bat_max_lo toward reg_v_bat_max_hi Condition Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 15 www.emmicroelectronic.com 420010-D01, 2.0 608003 11 LTS SURVEY PERIOD As LTS is huge compare to STS, the LTS survey period Tlts_period is not critical at all. It could be set to a high value without any impact. The power consumption of LTS survey, when Tlts_period is 1s, is less than 1nW. In HRV_LOW mode, this period (Tlts_period_hrv_low) is set by reg_t_hrv_low_cfg.t_lts_hrv_low_period to a different value, but as in operating the impact is negligible. We advise the user to set Tlts_period to 1s and Tlts_period_hrv_low to 2s as follows: reg_t_lts_period = 101 reg_t_hrv_low_cfg.t_lts_hrv_low_period = 101 Tlts_period is set by the registers reg_t_lts_period and reg_t_hrv_low_cfg.t_lts_hrv_low_period as follows: Tlts_period Tlts_period in HRV_LOW mode Reg value register : reg_t_lts_period register : reg_t_hrv_low_cfg.t_lts_hrv_low_period 000 1ms 2ms 001 4ms 8ms 010 16ms 32ms 011 64ms 128ms 100 256ms 512ms 101 1s 2s 110 4s 8s 111 16s 32s Table 5: Tlts_period and Tlts_period_hrv_low Related Registers Selection Note: At start-up the EM8500 waits Tlts_period before to enable VSUP. Usually this is not critical as the start-up is executed one time in the life of the product. Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 16 www.emmicroelectronic.com 420010-D01, 2.0 608003 TABLE OF CONTENTS Storage elements STS/LTS supervising .......................................................................................................................1 ABSTRACT ..............................................................................................................................................................1 ABBREVIATIONS.....................................................................................................................................................1 1 Scope.....................................................................................................................................................................2 2 Supervising registers settings sequence ...............................................................................................................4 3 VLD reference .......................................................................................................................................................5 4 Operating mode settings .......................................................................................................................................6 4.1 Battery type ...................................................................................................................................................6 4.2 Battery protection ..........................................................................................................................................6 4.3 Force connection of LTS to STS in primary cell mode .................................................................................6 5 Absolute values settings ........................................................................................................................................7 5.1 Maximum battery voltage ..............................................................................................................................7 5.2 Maximum application voltage .......................................................................................................................7 5.3 Minimum battery voltage ...............................................................................................................................7 6 Short term storage capacitor setting .....................................................................................................................8 7 STS survey period .................................................................................................................................................9 7.1 Example of STS survey period calculation ...................................................................................................9 8 Hysteresis on v_bat_min settings ........................................................................................................................10 8.1 Level v_bat_min_hi with VDD_STS and VDD_LTS disconnected .............................................................10 8.2 Example of v_bat_min_hi_dis calculation ...................................................................................................10 8.3 Level v_bat_min_hi with VDD_STS and VDD_LTS connected ..................................................................11 9 Level v_apl_max_lo settings ...............................................................................................................................12 9.1 Level v_apl_max_lo toward v_bat_min_hi ..................................................................................................12 9.2 Level v_apl_max_lo toward v_apl_max_hi .................................................................................................13 9.3 Level v_apl_max_lo adjustment .................................................................................................................13 9.4 Level v_apl_max_lo with VDD_STS and VDD_LTS connected .................................................................14 10 Level v_bat_max_lo settings ...........................................................................................................................15 10.1 Level v_bat_max_lo with VDD_STS and VDD_LTS connected .............................................................15 11 LTS survey period ............................................................................................................................................16 Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 17 www.emmicroelectronic.com 420010-D01, 2.0 608003 LIST OF TABLES Table 1: List of Registers Related to Storage Elements Supervising .................................................................... 2 Table 2: Mapping of Registers in EEPROM .......................................................................................................... 3 Table 3: Vlvl Precision ........................................................................................................................................... 5 Table 4: Tsts_period Related Registers Selection ................................................................................................ 9 Table 5: Tlts_period and Tlts_period_hrv_low Related Registers Selection ....................................................... 16 LIST OF FIGURES Figure 1: VDD_STS Measurement Toward v_bat_min_hi_dis ............................................................................ 10 Figure 2: Effect of v_apl_max_lo Level on VDD_LTS Charge Phase Delay ....................................................... 12 Figure 3: VDD_STS Measurement Toward v_apl_max_lo ................................................................................. 13 LIST OF EQUATIONS Equation 1: VLD Reference Calculation ................................................................................................................ 5 Equation 2: reg_v_bat_max_hi Calculation ........................................................................................................... 7 Equation 3: reg_v_apl_max_hi Calculation ........................................................................................................... 7 Equation 4: reg_v_bat_min_lo Calculation ............................................................................................................ 7 Equation 5: Csts Calculaton; all Decoupling Capacitors Enabled Together ......................................................... 8 Equation 6: STS Survey Period Calculation .......................................................................................................... 9 Equation 7: Example of STS Survey Period Calculation ....................................................................................... 9 Equation 8: v_bat_min_hi_dis Calculation ........................................................................................................... 10 Equation 9: Register reg_v_bat_min_hi_dis Calculation ..................................................................................... 10 Equation 10: reg_v_bat_min_hi_con Toward reg_v_bat_min_lo Conditions ...................................................... 11 Equation 11: v_apl_max_lo Toward v_bat_min_hi_dis Condition ....................................................................... 12 Equation 12: Pin_max Caclulation ....................................................................................................................... 13 Equation 13: v_apl_max_lo Toward v_apl_max_hi Condition ............................................................................. 13 Equation 14: reg_v_apl_max_lo Toward reg_v_apl_max_hi Condition ............................................................. 14 Equation 15: v_bat_max_lo Conditions; v_apl_max_lo and v_apl_max_hi not Used ......................................... 15 Equation 16: reg_v_bat_max_lo Toward reg_v_bat_max_hi Condition ............................................................. 15 EM Microelectronic-Marin SA (“EM”) makes no warranties for the use of EM products, other than those expressly contained in EM's applicable General Terms of Sale, located at http://www.emmicroelectronic.com. EM assumes no responsibility for any errors which may have crept into this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property rights of EM are granted in connection with the sale of EM products, neither expressly nor implicitly. In respect of the intended use of EM products by customer, customer is solely responsible for observing existing patents and other intellectual property rights of third parties and for obtaining, as the case may be, the necessary licenses. Important note: The use of EM products as components in medical devices and/or medical applications, including but not limited to, safety and life supporting systems, where malfunction of such EM products might result in damage to and/or injury or death of persons is expressly prohibited, as EM products are neither destined nor qualified for use as components in such medical devices and/or medical applications. The prohibited use of EM products in such medical devices and/or medical applications is exclusively at the risk of the customer Copyright 2015, EM Microelectronic-Marin SA 608003, Version 1.0, 26-Aug-15 18 www.emmicroelectronic.com 420010-D01, 2.0