ROHM TT8K11

Data Sheet
4V Drive Nch + Nch MOSFET
TT8K11
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
TSST8
Features
1) Low on-resistance.
2) Low voltage drive(4V drive).
3) Small surface mount package(TSST8).
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Abbreviated symbol : K11
 Application
Switching
 Inner circuit
 Packaging specifications
Type
(8)
Package
Code
Basic ordering unit (pieces)
TT8K11
Taping
TCR
3000

(8)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
 Absolute maximum ratings (Ta = 25C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Symbol
Limits
Unit
30
20
3
V
V
A
*1
12
0.8
A
A
*1
12
A
*2
Tch
Tstg
1.25
1.0
150
55 to 150
W / TOTAL
W / ELEMENT
C
C
Symbol
Limits
Unit
100
125
C / W/ TOTAL
C / W/ ELEMENT
Drain-source voltage
VDSS
Gate-source voltage
Continuous
VGSS
ID
Pulsed
Continuous
IDP
Is
Pulsed
Isp
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
PD
(7)
∗2
(6)
(5)
∗2
∗1
(1)
∗1
(2)
(3)
(4)
1 ESD PROTECTION DIODE
2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
*
Rth (ch-a)
*Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Data Sheet
TT8K11
 Electrical characteristics (Ta = 25C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Gate-source leakage
Symbol
IGSS
Drain-source breakdown voltage V(BR)DSS
Min.
Typ.
Max.
Unit
-
-
10
A
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, V GS=0V
Conditions
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1A
Static drain-source on-state
resistance
RDS (on)*
-
51
71
ID=3A, VGS=10V
-
67
94
m ID=3A, VGS=4.5V
-
78
109
Forward transfer admittance
l Yfs l *
2.0
-
-
S
VDS=10V, ID=3A
Zero gate voltage drain current
ID=3A, VGS=4V
Input capacitance
Ciss
-
140
-
pF
VDS=10V
Output capacitance
Coss
-
55
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
28
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
5
-
ns
VDD 15V, I D=1.5A
tr *
-
13
-
ns
VGS=4.5V
td(off) *
-
20
-
ns
RL=10
Rise time
Turn-off delay time
tf *
-
3
-
ns
RG=10
Total gate charge
Fall time
Qg *
-
2.5
-
nC
VDD 15V, I D=3A
Gate-source charge
Qgs *
Qgd *
-
0.8
0.6
-
nC
nC
VGS=5V
Gate-drain charge
Min.
Typ.
Max.
-
-
1.2
*Pulsed
Body diode characteristics (Source-Drain)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Unit
V
Conditions
Is=3A, VGS=0V
*Pulsed
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2/6
2011.08 - Rev.A
Data Sheet
TT8K11
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
3
3
VGS=2.8V
VGS=2.5V
Ta=25°C
pulsed
VGS=10.0V
VGS=4.5V
VGS=4.0V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=3.0V
2
VGS=4.5V
VGS=10.0V
VGS=2.5V
1
0
VGS=4.0V
2
VGS=3.0V
VGS=2.8V
1
0
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : VDS [V]
6
8
10
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=10V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
4
Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=4.5V
VGS=10V
100
10
0.01
0.1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.01
10
0.1
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=4.5V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.01
1
Drain Current : ID [A]
Drain Current : ID [A]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
pulsed
0.1
1
100
10
0.01
10
0.1
1
10
Drain Current : ID [A]
Drain Current : ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.08 - Rev.A
Data Sheet
TT8K11
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Transfer Characteristics
100
10
VDS=10V
pulsed
10
1
Drain Currnt : ID [A]
Forward Transfer Admittance
Yfs [S]
VDS=10V
pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.01
0.001
0.001
0.01
0.1
1
10
0.0
0.5
1.0
Drain Current : ID [A]
10
2.5
3.0
3.5
150
VGS=0V
pulsed
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Source Current : Is [A]
2.0
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.9 Source Current vs. Source-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
ID=1.5A
100
ID=3.0A
50
0
0.01
0.0
0.5
1.0
0
1.5
2
4
6
8
Source-Drain Voltage : VSD [V]
Gate-Source Voltage : VGS [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10
10
1000
VDD≒15V
VGS=4.5V
RG=10Ω
Ta=25°C
Pulsed
100
td(off)
td(on)
10
Ta=25°C
VDD=15V
ID=3A
Pulsed
8
Gate-Source Voltage : VGS [V]
tf
Switching Time : t [ns]
1.5
Gate-Source Voltage : VGS [V]
6
4
2
tr
1
0
0.01
0.1
1
10
0
Drain Current : ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
1
2
3
4
5
Total Gate Charge : Qg [nC]
4/6
2011.08 - Rev.A
Data Sheet
TT8K11
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
1000
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
Ta=25°C
f=1MHz
VGS=0V
100
Drain Current : ID [ A ]
Capacitance : C [pF]
10
Ciss
PW = 100μs
1
PW = 1ms
PW = 10ms
0.1
Coss
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Crss
10
DC Operation
0.01
0.01
0.1
1
10
100
0.1
Drain-Source Voltage : VDS [V]
1
10
100
Drain-Source Voltage : VDS [ V ]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Normalized Transient Thermal Resistance : r（t）
10
Ta=25°C
Single Pulse : 1Unit
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=125°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
Data Sheet
TT8K11
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
 Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.08 - Rev.A
Notice
Notes
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A