To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. TBB1008 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-1599 (Z) Rev.0 Jun. 2002 Features • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. • Suitable for World Standard Tuner RF amplifier. • Very useful for total tuner cost reduction. • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; CMPAK-6 Outline CMPAK-6 6 5 4 2 1 Notes: 1. 2. 3 1. Gate-1(1) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(2) Marking is “HM”. TBB1008 is individual type number of HITACHI TWIN BBFET. TBB1008 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 6 V Gate1 to source voltage VG1S +6 -0 V Gate2 to source voltage VG2S +6 -0 V Drain current ID 30 mA 250 mW *3 Channel power dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm). Rev.0, Jun. 2002, page 2 of 12 TBB1008 Electrical Characteristics The below specification are applicable for UHF unit (FET1) (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V ID = 200 µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +6 — — V IG1 = +10 µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS +6 — — V IG2 = +10 µA, VG1S = VDS = 0 Gate1 to source cutoff current IG1SS — — +100 nA VG1S = +5 V, VG2S = VDS = 0 Gate2 to source cutoff current IG2SS — — +100 nA VG2S = +5 V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.5 0.7 1.0 V VDS = 5 V, VG2S = 4 V, ID = 100 µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.7 1.0 V VDS = 5 V, VG1S = 5 V, ID = 100 µA Drain current ID(op) 13 17 21 mA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 kΩ Forward transfer admittance |yfs| 21 26 32 mS VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 kΩ, f = 1 kHz Input capacitance Ciss 1.4 1.8 2.2 pF VDS = 5 V, VG1 = 5 V Output capacitance Coss 1.0 1.4 1.8 pF VG2S =4 V, RG = 100 kΩ Reverse transfer capacitance Crss — 0.02 0.04 pF f = 1 MHz Power gain PG 16 21 — dB VDS = VG1 = 5 V, VG2S = 4 V RG = 100 kΩ, f = 900 MHz Zi = S11*, Zo = S22* (:PG) Noise figure NF — 1.7 2.5 dB Zi = S11opt (:NF) Rev.0, Jun. 2002, page 3 of 12 TBB1008 The below specification are applicable for VHF unit (FET2) (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 6 — — V ID = 200 µA, VG1S = VG2S = 0 Gate1 to source breakdown voltage V(BR)G1SS +6 — — V IG1 = +10 µA, VG2S = VDS = 0 Gate2 to source breakdown voltage V(BR)G2SS +6 — — V IG2 = +10 µA, VG1S = VDS = 0 Gate1 to source cutoff current IG1SS — — +100 nA VG1S = +5 V, VG2S = VDS = 0 Gate2 to source cutoff current IG2SS — — +100 nA VG2S = +5 V, VG1S = VDS = 0 Gate1 to source cutoff voltage VG1S(off) 0.5 0.75 1.0 V VDS = 5 V, VG2S = 4 V, ID = 100 µA Gate2 to source cutoff voltage VG2S(off) 0.5 0.75 1.0 V VDS = 5 V, VG1S = 5 V, ID = 100 µA Drain current ID(op) 16 20 24 mA VDS = 5 V, VG1 = 5 V, VG2S = 4 V RG = 100 kΩ Forward transfer admittance |yfs| 27 32 38 mS VDS = 5 V, VG1 = 5 V, VG2S =4 V RG = 100 kΩ, f = 1 kHz Input capacitance Ciss 2.3 2.7 3.1 pF VDS = 5 V, VG1 = 5 V Output capacitance Coss 1.4 1.8 2.2 pF VG2S =4 V, RG = 100 kΩ Reverse transfer capacitance Crss — 0.03 0.05 pF f = 1 MHz Power gain PG 24 29 — dB VDS = VG1 = 5 V, VG2S = 4 V Noise figure NF — 1.2 1.7 dB RG = 100 kΩ, f = 200 MHz Rev.0, Jun. 2002, page 4 of 12 TBB1008 Test Circuits • DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) • Measurment of FET1 Gate 2 VG2 Open Open RG A Gate 1 VG1 ID Drain VD Source • Measurment of FET2 VG2 Gate 2 RG Drain Gate 1 A ID VD VG1 Open Open Source Rev.0, Jun. 2002, page 5 of 12 TBB1008 • Equivalent Circuit No.1 No.6 Gate-1(1) Gate-1(2) BBFET-(1) BBFET-(2) No.2 No.5 Source Gate-2 No.3 No.4 Drain(1) Drain(2) • 200 MHz Power Gain, Noise Figure Test Circuit 1000 p 1000 p 47 k Input (50 Ω) VT VG2 VT 1000 p 47 k 1000 p 47 k TWINBBFET 1000 p L2 L1 10p max 1000 p 1000 p 36 p Output (50 Ω) 1SV70 RG RFC 100k 1SV70 1000 p V D = V G1 L1 : φ1 mm Enameled Copper Wire,Inside dia 10 mm, 2 Turns L2 : φ1 mm Enameled Copper Wire,Inside dia 10 mm, 2 Turns RFC : φ 1mm Enameled Copper Wire,Inside dia 5 mm, 2 Turns Rev.0, Jun. 2002, page 6 of 12 Unit : Resistance (Ω) Capacitance (F) Typical Output Characteristics (FET1) 25 200 100 0 50 100 150 Ambient Temperature kΩ 68 kΩ kΩ 0 15 10 kΩ 0 12 kΩ 0 15 10 0k 18 5 0 200 G= 20 R 300 V G2S = 4 V V G1 = VDS 82 I D (mA) 400 Maximum Channel Power Dissipation Curve Drain Current Channel Power Dissipation Pch* (mW) TBB1008 Ta (°C) 1 2 3 Drain to Source Voltage Ω 4 5 V DS (V) * Value on the glass epoxy board (50mm × 40mm × 1mm) 20 Forward Transfer Admittance |y fs | (mS) Drain Current I D (mA) 25 Drain Current vs. Gate1 Voltage (FET1) V DS = 5 V R G = 100 kΩ 4V 15 3V 10 2V 5 VG2S = 1 V 0 1 2 Gate1 Voltage 3 V G1 4 (V) 5 50 40 Forward Transfer Admittance vs. Gate1 Voltage (FET1) V DS = 5 V V G2S = 4 V 30 R G = 68 k Ω 100 kΩ 150 kΩ 20 10 0 1 2 Gate1 Voltage 3 4 5 V G1 (V) Rev.0, Jun. 2002, page 7 of 12 TBB1008 Drain Current vs. Gate Resistance (FET1) 4 V DS = 5 V V G1 = 5 V V G2S = 4 V 25 20 15 10 5 0 10 20 50 100 200 Input Capacitance Ciss (pF) Drain Current I D (mA) 30 Input Capacitance vs. Gate2 to Source Voltage (FET1) V DS = 5 V V G1 = 5 V R G = 100 kΩ f = 1 MHz 1 0 1 2 3 4 Gate Resistance R G (kΩ) Gate2 to Source Voltage V G2S (V) Typical Output Characteristics (FET2) Drain Current vs. Gate1 Voltage (FET2) 25 kΩ 0 15 Ω 0k 18 10 5 I D (mA) Drain Current 12 0 15 kΩ 10 0 kΩ kΩ 68 82 G= 20 kΩ V G2S = 4 V V G1 = VDS R I D (mA) 2 0 500 1000 25 Drain Current 3 20 V DS = 5 V R G = 100 kΩ 4V 3V 15 2V 10 5 VG2S = 1 V 0 1 2 3 Drain to Source Voltage Rev.0, Jun. 2002, page 8 of 12 4 5 V DS (V) 0 1 2 Gate1 Voltage 3 V G1 4 (V) 5 50 30 V DS = 5 V V G2S = 4 V 40 R G = 68 k Ω 100 kΩ 30 150 kΩ 20 10 0 1 2 3 Gate1 Voltage 4 V DS = 5 V V G1 = 5 V V G2S = 4 V 25 20 15 10 5 0 10 5 V G1 (V) 20 50 100 200 500 1000 Gate Resistance R G (kΩ) Power Gain vs. Gate Resistance (FET2) Input Capacitance vs. Gate2 to Source Voltage (FET2) 40 4 35 Power Gain PG (dB) Input Capacitance Ciss (pF) Drain Current vs. Gate Resistance (FET2) Forward Transfer Admittance vs. Gate1 Voltage (FET2) Drain Current I D (mA) Forward Transfer Admittance |y fs | (mS) TBB1008 3 2 V DS = 5 V V G1 = 5 V R G = 100 kΩ f = 1 MHz 1 0 0 1 30 25 20 15 2 3 Gate2 to Source Voltage V G2S (V) 4 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance R G (kΩ) Rev.0, Jun. 2002, page 9 of 12 TBB1008 Noise Figure vs. Gate Resistance (FET2) Gain Reduction vs. Gate2 to Source Voltage (FET2) 0 3 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz Gain Reduction GR (dB) Noise Figure NF (dB) 4 2 1 0 10 10 20 30 40 50 20 50 100 200 500 1000 Gate Resistance R G (kΩ) Rev.0, Jun. 2002, page 10 of 12 V DS = V G1 = 5 V R G = 100 kΩ 4 3 2 1 Gate2 to Source Voltage V G2S (V) 0 TBB1008 Package Dimensions As of January, 2002 (0.65) + 0.1 0.15 – 0.05 0 – 0.1 0.9 ± 0.1 + 0.1 – 0.05 (0.2) 6-0.2 (0.65) 2.1 ± 0.3 2.0 ± 0.2 1.3 ± 0.2 (0.425) 1.25 ± 0.1 (0.425) Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) CMPAK-6 — Conforms 0.006 g Rev.0, Jun. 2002, page 11 of 12 TBB1008 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.0, Jun. 2002, page 12 of 12