20131114075412 3103

J8N
65B
WF
WFJ
8N6
Sili con N-Ch
annel MOS
FET
Cha
OSF
Features
�
7.5A,650V,RDS(on)(Max1.3Ω)@VGS =10V
�
Ultra-low Gate charge(Typical 25nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Isolation Voltage (VISO=4000V AC)
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe, VDMOS technology. this latest technology has been
especially designed to mi nimize on-state resistance, have a high
rugged avalanche
suited
characteristics .This devices is specially well
for half bridge and
electronic
lamp ball ast,
full bridge resonant
topology li ne a
high efficiency switched
mode power
suppli es, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Pa ram e te r
Value
Units
Drain Source Voltage
650
V
Con tinuous Drain Current(@Tc=25℃)
7.5
A
Con tinuous Drain Current(@Tc=100℃)
4.3
A
32
A
±30
V
ID
I DM
Drain Current Pulsed
VGS
Gate to Source Voltage
E AS
Single Pulsed Avalanche Energy
(Note2)
230
mJ
E AR
Repetitive Avalanche Energy
(Note1)
14.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
PD
TJ,T stg
TL
(Note1)
Total Power Dissipation(@Tc=25℃)
147
W
Derating Factor above 25℃
0.38
W/℃
-40~150
℃
300
℃
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Pa ra me te r
Valu e
Min
Typ
Max
Units
RQ JC
Thermal Resistance , Junction -to -Case
-
-
0.85
℃/W
R QJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Nov.2011
Copyr [email protected] M ic ro e le ctro n ics Co., Ltd., All right reser ved.
J8N
65B
WF
WFJ
8N6
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Symbol
Min
Type
Max
Unit
I GSS
VGS =±30V,VDS=0V
-
-
±100
nA
V(BR)G SS
IG =±10 µA,VDS =0V
±30
-
-
V
VDS =650V,VGS=0V,Tc=25℃
-
-
10
µA
VDS =500V,Tc=125℃
-
-
100
µA
650
-
-
V
-
0.70
-
V/℃
I DSS
Drain -source breakdown voltage
V(BR)DSS
Breakdown Voltage Temperature
∆BVDSS/∆
Coefficient
Test Condition
ID=250 µA,VG S=0V
ID=250 µA, referenced to
25℃
TJ
Gate threshold voltage
VGS(th)
VDS =VGS ,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS =10V,ID=3.75A
-
1.1
1.3
Ω
Forward Transconductance
gfs
VDS =40V,I D=3.75A
-
6.2
-
S
Input capacitance
C iss
VDS =25V,
-
965
Reverse transfer capacitance
C rss
VGS =0V,
-
12
16
Output capacitance
C oss
f=1MHz
-
105
135
VDD=300V,
-
60
130
T d(on)
ID=7.5A
-
16.5
45
tf
R G=25Ω
-
64.5
140
-
81
170
-
28
36
-
4.5
-
-
12
-
Turn-On Rise time
Switching
Turn-On time
time
Turn-Off Fall time
tr
1255
pF
ns
Turn-Off time
(Note4,5)
T d(off)
Total gate charge(ga te-source
VDD=480V,
Qg
plus gate-drain)
VGS =10V,
Gate-source charge
Qgs
Gate-drain("mi ller") Charge
Qgd
ID=7.5A
(Note4,5)
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Con tinuous drain reverse current
I DR
-
-
-
7.5
A
Pulse drain reverse current
I DRP
-
-
-
30
A
Forward voltage(diode)
VDSF
IDR=7.5A,VGS =0V
-
-
1.4
V
Reverse recovery time
trr
IDR=7.5A,VGS =0V,
-
365
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
3.4
-
µC
Note 1.Repeativity rating :pulse width lim ited by junction temperature
2.L=19.5mH I AS=7.5A,VDD=50V,RG =0Ω,Starting TJ =25℃
3.I SD≤7.5.A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ =25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
eady , keep you ad va
nce
St
Ste
van
J8N
65B
WF
WFJ
8N6
Fig.1 On Region Characteristics
Fig.2 Transfer
Characteristics
Fig.3 On-Resistance Variation vs
Fig.4 Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation with Source Curr ent
and Temperature
Fig.5 Capacitance Characteristics
Fig.6 Gate Charge Characteristics
3/7
eady , keep you ad va
nce
St
Ste
van
J8N
65B
WF
WFJ
8N6
Fig.7 Breakdown Voltage Variation
Fig.8 On-Resistance Variation
Vs.Temperature
Vs.Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Curr ent
vs.case Temperature
Fig.11 Transient Thermal Response Curve
4/7
eady , keep you ad va
nce
St
Ste
van
J8N
65B
WF
WFJ
8N6
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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eady , keep you ad va
nce
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van
J8N
65B
WF
WFJ
8N6
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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eady , keep you ad va
nce
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van
J8N
65B
WF
WFJ
8N6
TO- 262
cka
ge Dim
ension
Pa
Pac
kage
Dime
Unit:mm
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eady , keep you ad va
nce
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van