Down

5B
WFJ5N6
5N65B
Silicon N-Channel MOSFET
Features
�
4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V
�
Ultra-low Gate charge(Typical13.3nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche
characteristics .This devices is specially well
suited for half bridge and
full bridge resonant
topology line a
electronic lamp ballast, high efficiency switched
mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
650
V
Continuous Drain Current(@Tc=25℃)
4.5
A
Continuous Drain Current(@Tc=100℃)
3.1
A
16
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
10
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.5
V/ns
Total Power Dissipation(@Tc=25℃)
100
W
Derating Factor above 25℃
0.80
W/℃
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
TL
Channel Temperature
300
℃
PD
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.25
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A May.2012
[email protected] Microelectronics Co., Ltd., All right reserved.
5B
WFJ5N6
5N65B
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Type
Max
Unit
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=650V,VGS=0V
-
-
10
µA
VDS=500V,Tc=125℃
-
-
100
µA
-
0.65
-
V/℃
IDSS
△BVDSS/
△TJ
coefficient
Drain -source breakdown voltage
Min
IGSS
Drain Cut -off current
Breakdown voltage Temperature
Test Condition
ID=250 µA,Referenced
to 25℃
V(BR)DSS
ID=250 µA,VGS=0V
650
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2.25A
-
1.8
2.5
Ω
Forward Transconductance
gfs
VDS=40V,ID=2.25A
-
4.7
-
S
Input capacitance
Ciss
VDS=25V,
-
490
642
Reverse transfer capacitance
Crss
VGS=0V,
-
9
12
Output capacitance
Coss
f=1MHz
-
95
124
VDD=300V,
-
49
111
pF
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=4.5A
-
16
42
tf
RG=25Ω
-
37
84
-
46
102
-
13.3
19
-
3.6
-
-
4.9
-
Min
Type
Max
Unit
Switching time
ns
Turn-off Fall time
Turn-off delay time
(Note4,5)
Td(off)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=4.5A
(Note,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
4.5
A
Pulse drain reverse current
IDRP
-
-
-
16
A
Forward voltage(diode)
VDSF
IDR=4.5A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=4.5A,VGS=0V,
-
330
-
ns
Reverse recovery charge
Qrr
dIDR /dt =100 A /µs
-
2.67
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=25mH IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
5B
WFJ5N6
5N65B
Fig.1 On-State characteristics
Fig.2 Transfer Current characteristics
Fig.3 On-Resistance Variation vs Drain
Fig.4 Body Diode Forward Voltage
Current and Gate Voltage
Variation with Source Current
and Temperature
Fig.5 Capacitance Characteristics
Fig.6 Gate Charge Characteristics
3/7
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5B
WFJ5N6
5N65B
Fig.7 Breakdown Voltage Variation
vs.Temperature
Fig.8 On-Resistance Variation vs
Junction Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current vs
Case Temperature
Fig.11 Transient Thermal Response Curve
4/7
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5B
WFJ5N6
5N65B
Fig.12 Gate Test Circuit & Waveform
Fig.13 Resistive Switching Test Circuit & Waveform
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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5B
WFJ5N6
5N65B
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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5B
WFJ5N6
5N65B
262 Package Dimension
TOTO-262
Unit:mm
7/7
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