Vishay Intertechnology, Inc. P owerPAIR ® MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in High-Current, Multi-Phase Synchronous Buck www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . PowerPAIR® MOSFETs Focus Products Asymmetric Dual N-Channel MOSFETs - PowerPAIR® Package Form Factor Part Number SiZ340DT 3x3 SiZ342DT Ch VDS (V) VGS (V) 1 30 2 30 30 1 2 RDS(on) (Ω) Max. Qg (nC) Typ. VGS = 4.5 V Qgs Typ. (nC) VGS = 10 V VGS = 4.5 V VGS = 10 V 20 0.0095 0.0137 12.3 5.6 2.3 20 0.0051 0.007 22.6 10.1 4.2 20 0.0111 0.0138 10 4.5 2.1 Qgd Typ. (nC) ID (A) TA = 25 °C TA = 70 °C Rg Typ. (Ω) FOM at 4.5 V Typ. 1 15.6 12.4 1.7 62 1.8 22.6 18.1 1.3 59 0.7 15.6 12.4 1.4 50 Increases power density and provides superior performance in high switching frequencies SiZ710DT 6 x 3.7 SiZ728DT SiZ730DT 1 20 20 0.0068 0.009 11.5 6.9 2.4 1.7 16.0 15.0 1.3 50 2 20 20 0.0033 0.0043 38 18.2 6.6 4.8 30.0 24.0 0.8 62 1 25 20 0.0077 0.011 17 8.1 3 2.5 16.0 14.2 1 97 2 25 20 0.0035 0.0048 42.5 20.5 7.7 6.4 28.8 23.0 0.8 19 1 30 20 0.0093 0.013 15.6 7.7 2.6 3 12.9 10.3 1 137 2 30 20 0.0039 0.0053 43 21.2 7 7.4 26.4 21.1 0.8 23 80 26 % smaller than 6 x 5 mm² package without sacrificing performance for high current DC/DC SiZ916DT SiZ920DT SiZ918DT 6x5 SiZ900DT SiZ902DT SiZ904DT 1 30 20 0.0064 0.01 17 7.2 3.6 0.94 16 15.5 2.5 2 30 20 0.0013 0.00175 106 45 23.2 5 40 38.8 1 2 1 30 20 0.0071 0.0089 22.3 10.5 5.1 2.8 32 17 1.6 66 2 30 20 0.003 0.0035 60 29 10 9.5 32 26 0.6 10 1 30 20 0.012 0.0145 14 6.8 2.6 1.9 14.3 11.4 2 174 2 30 20 0.0037 0.0045 14 6.8 2.6 1.9 26.0 21.0 1.1 16 1 30 20 0.0072 0.0092 29 13.5 5.8 3.1 19 15.5 2.4 69 2 30 20 0.0039 0.0047 73 34 15 7.3 28 22 0.9 18 1 30 20 0.012 0.0145 14 6.8 2.6 1.9 14.3 11.4 2 174 2 30 20 0.0064 0.0083 43 21 8.1 6.5 16 16 1.5 56 1 30 20 0.024 0.03 8 3.8 1.4 1.1 9.5 7.6 3.2 720 2 30 20 0.0135 0.017 15.4 7.3 2.3 2.2 14.5 11.6 0.8 230 TA = 25 °C TA = 70 °C Rg Typ. (Ω) FOM at 4.5 V Typ. Meticulously tuned MOSFET pairing increases efficiency in high-current synchronous buck converters Asymmetric Dual N-Channel MOSFETs Plus Integrated Schottky - PowerPAIR Package Form Factor Part Number 6 x 3.7 SiZ790DT Ch VDS (V) VGS (V) 1 30 2 30 RDS(on) (Ω) Max. Qg (nC) Typ. ID (A) Qgs Typ. (nC) Qgd Typ. (nC) 7.7 2.6 3 12.9 10.3 1 137 17 5.7 5 23.4 18.7 0.9 28 VGS = 10 V VGS = 4.5 V VGS = 10 V VGS = 4.5 V 20 0.0093 0.013 15.6 20 0.0047 0.0059 36 A compact solution that reduces voltage transients and EMI issues for high-current synchronous buck converters 6x5 SiZ914DT 1 30 20 0.0064 0.01 2 30 20 0.00137 0.00194 17 7.2 3.6 0.94 16 15.5 2.5 80 66 30.1 10.9 3.8 40 38.8 1 3 Provides the highest overall efficiency, noise immunity, and current handling capability THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . PowerPAIR® MOSFETs 95 % 94 % 93 % 92 % 91 % 90 % 89 % 88 % 87 % 86 % 85 % 84 % Measured Efficiency at 12 VIN, 1.5 VOUT, 300 kHz, 1.2 µH Measured Efficiency at 12 VIN, 1.5 VOUT, 1000 kHz, 1.2 µH 93 % 92 % 91 % Efficiency Efficiency Focus Products 90 % 89 % 88 % 87 % 86 % 85 % 84 % 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1 2 3 4 5 Load Current (A) SiZ340DT 6 7 8 9 10 11 12 13 14 15 16 Load Current (A) SiZ340DT Competitor Competitor 1. Improves efficiency over designs with TrenchFET® Gen III or similar devices from competitors 2. Demonstrates high efficiency at switching frequencies from 300 kHz to 1 MHz 3. Reduced power loss enables design to operate cooler 12 VIN / 1.8 VOUT / 450 kHz - PowerPAIR HS Temp. vs Load PowerPAIR 3 x 3 TrenchFET IV vs. TrenchFET III 110.0 105.0 100.0 95.0 90.0 85.0 80.0 75.0 70.0 65.0 60.0 55.0 50.0 45.0 40.0 35.0 30.0 25.0 SiZ300DT (GEN III) SiZ340DT (GEN IV) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Output Load (A) 1. Reduces operating temperature by 30 °C at 12 A output load current 2. Increases power density by 25 % and allows more output per DC/DC THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CO-PACKAGED MOSFETS USE LESS SPACE AND INCREASE PERFORMANCE OVER TWO DISCRETES Advantages of Vishay PowerPAIR® MOSFETs • Optimized high- and low-side MOSFET pairing improves efficiency • Integrated solution reduces component count, saves space, and simplifies layout • Increased power density for high-current synchronous buck converters • Reduces parasitic inductance from PCB traces, increasing efficiency and reducing ringing Vishay PowerPAIR products leverage the latest TrenchFET® technology with low RDS(on), Qg, and Qgd to increase power density of the DC/DC converters and minimize wasted power For the Following Applications • Synchronous buck DC/DC converters • System power and DDR memories • Point-of-load (POL) Increase power density to use less PCB real estate for the MOSFET power stage Increase efficiency across the full range of load types to save power and run cooler in synchronous buck converters Useful Links • www.vishay.com/mosfets/powerpair-package/ Vishay’s integration level ranges from high-performance discrete power MOSFETs to integrated PowerPAIR, DrMOS, and microBUCK® solutions A WORLD OF SOLUTIONS VMN-MS6927-1406