Vishay Intertechnology, Inc. IGBT POWER MODULES SOT-227 PACKAGE Up to 250 A, 600 V / 1200 V, PT, NPT, and Trench Field Stop Single-Switch IGBT Modules with Antiparallel Diodes INT-A-PAK (34 mm) PACKAGE Up to 100 A, 1200 V, Half Bridges with PT, NPT, and Trench Field Stop IGBT DUAL INT-A-PAK (62 mm) PACKAGE Up to 600 A, 1200 V, SingleSwitch, Half Bridges with PT, NPT, and Trench Field Stop IGBT HALF-BRIDGE AND 3-LEVELS Low-Profile Dual INT-A-PAK (62 mm, 17 mm Height), Low VCE(on) and Low Stray Internal Inductances NEW IGBT MODULE IN EMIPAK-1B Neutral Point Clamp Topology for Solar and UPS Applications, Ultrafast Trench IGBT Technology NEW IGBT MODULE IN EMIPAK-2B 3-Level HalfBridge Inverter Stage, Trench Short Circuit Rated IGBT Technology DUAL P-CHANNELS www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . IGBT POWER MODULES Focus Products Single-Switch IGBT Modules in SOT-227 and Dual INT-A-PAK Package Series VS-GB90DA60U VCES (V) IC at 90 ºC (Tcase) (A) VCE(on) at TJ = 25 ºC (V) Etot at TJ = 125 ºC (mJ) Package 600 90 2.40 1.76 SOT-227 UL approved, electrically isolated baseplate, new generation – low thermal resistance single-switch NPT IGBT, HEXFRED® antiparallel diode with ultrasoft reverse recovery. VS-GT140DA60U 600 140 1.70 2.55 SOT-227 UL approved, electrically isolated baseplate, new generation – low thermal resistance single-switch Trench IGBT, FRED Pt® antiparallel diode with ultrasoft reverse recovery. VS-GB90DA120U 1200 90 3.30 5.80 SOT-227 UL approved, electrically isolated baseplate, new generation – low thermal resistance single-switch NPT IGBT, low Qrr HEXFRED antiparallel diode. VS-GT175DA120U 1200 175 1.73 15.70 SOT-227 UL approved, electrically isolated baseplate, new generation – low thermal resistance single-switch Trench IGBT, HEXFRED antiparallel diode with ultrasoft reverse recovery. VS-GA250SA60S 600 250 1.33 43.7 SOT-227 UL approved, electrically isolated baseplate, new generation – low thermal resistance, ultra low VCE(on) single-switch IGBT, HEXFRED antiparallel diode with ultrasoft reverse recovery. VS-GB300AH120N 1200 300 (at 80 °C) 1.90 58 Dual INT-A-PAK (62 mm) Dual INT-A-PAK (62 mm) standard package, IGBT single switch with fast and soft reverse recovery antiparallel diode. 10 μs short circuit capability. Low inductance case. VS-GB400AH120N 1200 400 (at 80 °C) 1.90 81 Dual INT-A-PAK (62 mm) Dual INT-A-PAK (62 mm) standard package, IGBT single switch with fast and soft reverse recovery antiparallel diode. 10 μs short circuit capability. Low inductance case. VS-GB600AH120N 1200 600 (at 80 °C) 1.90 105 Dual INT-A-PAK (62 mm) Dual INT-A-PAK (62 mm) standard package, IGBT single switch with fast and soft reverse recovery antiparallel diode. 10 μs short circuit capability. Low inductance case. New IGBT Modules for Solar and UPS (3-Level / Double Interleaved Boost Converters) Series VS-ENQ030L120S VCES (V) IC at 80 ºC (Tcase) (A) VCE(on) at TJ = 25 ºC (V) Etot at TJ = 125 ºC (mJ) Pin Out Package 600 to 1200 42 1.42 0.61 PressFit EMIPAK-1B Neutral point clamp topology, ultrafast Trench IGBT technology, HEXFRED and silicon carbide diode technology, PressFit pin technology, exposed Al2O3 substrate with low thermal resistance. VS-ETF075Y60U 600 113 1.45 0.61 PressFit EMIPAK-2B 3-level half-bridge inverter stage, Trench short circuit rated IGBT technology, FRED Pt clamping diodes, PressFit pin technology, exposed Al2O3 substrate with low thermal resistance. VS-ETF150Y65U 650 152 (at 60 °C) 1.72 2.1 PressFit EMIPAK-2B 3-level half-bridge inverter stage, Trench short circuit rated IGBT technology, FRED Pt clamping diodes, PressFit pin technology, exposed Al2O3 substrate with low thermal resistance. VS-GT300FD060N 600 288 1.72 6.3 Screwable Dual INT-A-PAK low profile 3-level half-bridge inverter stage, Trench short circuit rated IGBT technology, FRED Pt anti-parallel and clamping diodes, low stray internal inductances. VS-ETL015Y120H 1200 15 2.61 1.89 PressFit EMIPAK-2B Double interleaved boost converter, Trench short circuit rated IGBT technology, HEXFRED clamping diodes, PressFit pin technology, exposed Al2O3 substrate with low thermal resistance. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . IGBT POWER MODULES Focus Products Half Bridge IGBT Power Modules Series VS-GB75TP120U VCES (V) IC at 90 ºC (Tcase) (A) VCE(on) at TJ = 25 ºC (V) Etot at TJ = 125 ºC (mJ) Package 1200 75 3.20 10 INT-A-PAK (34 mm) INT-A-PAK (34 mm) standard package, Trench IGBT half bridge. 10 μs short circuit capability. Low inductance case. Lower VCE(on) also available (VS-GB75TP120N). VS-GT100TP60N 600 100 1.65 2.5 INT-A-PAK (34 mm) INT-A-PAK (34 mm) standard package, low VCE(on) Trench IGBT half bridge. 5 μs short circuit capability. Low inductance case. VS-GT100TP120N 1200 100 1.90 13.7 INT-A-PAK (34 mm) INT-A-PAK (34 mm) standard package, low VCE(on) Trench IGBT half bridge. 10 μs short circuit capability. Low inductance case. VS-GB200TH120U 1200 200 3.10 38.2 Dual INT-A-PAK (62 mm) Dual INT-A-PAK (62 mm) standard package, low switching losses IGBT half bridge. 10 μs short circuit capability. Low inductance case. Lower VCE(on) also available (VS-GB200TH120N). VS-GB300TH120N 1200 300 2.00 67.4 Dual INT-A-PAK (62 mm) Dual INT-A-PAK (62 mm) standard package, IGBT half bridge. 10 μs short circuit capability. Low inductance case. Lower switching losses (VS-GB300TH20U) available. VS-GT400TH60N 600 400 1.60 40 Dual INT-A-PAK (62 mm) Dual INT-A-PAK (62 mm) standard package, low switching losses / low VCE(on) IGBT half bridge. 5 μs short circuit capability. Low inductance case. VS-GT400TH120U 1200 400 1.90 54.6 Dual INT-A-PAK (62 mm) Dual INT-A-PAK (62 mm) standard package, low VCE(on) Trench IGBT half bridge. 10 μs short circuit capability. Low inductance case. VS-GA300TD60S 600 376 1.24 156 Low profile Dual INT-A-PAK (62 mm) Low-profile dual INT-A-PAK (62 mm, 17 mm height), low VCE(on) IGBT half bridge. HEXFRED® antiparallel diode with ultrasoft reverse recovery, optimized for hard switching speed (DC to 1 kHz). Low stray internal inductances. VS-GA400TD60S 600 525 1.24 184 Low profile Dual INT-A-PAK (62 mm) Low-profile dual INT-A-PAK (62 mm, 17 mm height), low VCE(on) IGBT half bridge. HEXFRED antiparallel diode with ultrasoft reverse recovery, optimized for hard switching speed (DC to 1 kHz). Low stray internal inductances. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com STANDARD PACKAGE IGBT POWER MODULES – TAILORED FOR INDUSTRIAL AND RENEWABLE SEGMENTS Advantages of Vishay IGBT Power Modules • Industrial standard packages in isolated (3500 V at t = 1 s) and nonisolated versions • Mains electric topology available to address industrial inverter requirements • 600 V, 650 V, 1200 V IGBT silicon platforms (PT, NPT planar, and Trench FS) achieve the best efficiency in different applications • Module connection available in solderable pin, PressFit, and screwable form according to power level requested For the Following Applications • Welding • Uninterruptible power supplies (UPS) • Solar inverters Complete integrated solution for solar inverters and UPS Extensive product portfolio for input rectification, primary inverter, secondary AC/DC inverter, and output rectification for high frequency welding and plasma cutting Useful Links • IGBT power modules www.vishay.com/modules/igbt-modules/ • IGBT – 3-levels www.vishay.com/modules/igbt-modules/3Levels/ • Power modules selector guide www.vishay.com/doc?49382 A WORLD OF SOLUTIONS VMN-MS6959-1505