MICROCHIP MCP6144-I/P

MCP6141/2/3/4
600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps
Features:
Description:
•
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The MCP6141/2/3/4 family of non-unity gain stable
operational amplifiers (op amps) from Microchip
Technology Inc. operate with a single supply voltage as
low as 1.4V, while drawing less than 1 µA (maximum)
of quiescent current per amplifier. These devices are
also designed to support rail-to-rail input and output
operation. This combination of features supports
battery-powered and portable applications.
Low Quiescent Current: 600 nA/amplifier (typical)
Gain Bandwidth Product: 100 kHz (typical)
Stable for gains of 10 V/V or higher
Rail-to-Rail Input/Output
Wide Supply Voltage Range: 1.4V to 6.0V
Available in Single, Dual, and Quad
Chip Select (CS) with MCP6143
Available in 5-lead and 6-lead SOT-23 Packages
Temperature Ranges:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
Applications:
•
•
•
•
The MCP6141/2/3/4 family operational amplifiers are
offered in single (MCP6141), single with Chip Select
(CS) (MCP6143), dual (MCP6142) and quad
(MCP6144) configurations. The MCP6141 device is
available in the 5-lead SOT-23 package, and the
MCP6143 device is available in the 6-lead SOT-23
package.
Toll Booth Tags
Wearable Products
Temperature Measurement
Battery Powered
Design Aids:
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SPICE Macro Models
FilterLab® Software
Mindi™ Simulation Tool
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
Package Types
MCP6141
PDIP, SOIC, MSOP
MCP6143
PDIP, SOIC, MSOP
NC 1
NC 1
8 NC
VIN– 2
7 VDD
VIN+ 3
6 VOUT
VSS 4
Related Devices:
• MCP6041/2/3/4: Unity Gain Stable Op Amps
5 NC
VIN+ 3
V1
RF
VOUT
R3
V3
4 VIN–
VIN+ 3
MCP614X
VREF
Inverting, Summing Amplifier
© 2009 Microchip Technology Inc.
VSS 2
VOUTA 1
8 VDD
VINA– 2
7 VOUTB VINA– 2
6 VINB– VINA+ 3
VSS 4
5 VINB+
7 VDD
6 VOUT
5 NC
6 VDD
5 CS
4 VIN–
MCP6144
PDIP, SOIC, TSSOP
VOUTA 1
VINA+ 3
8 CS
MCP6143
SOT-23-6
VOUT 1
MCP6142
PDIP, SOIC, MSOP
R2
VSS 4
5 VDD
VSS 2
R1
VIN– 2
VIN+ 3
MCP6141
SOT-23-5
VOUT 1
Typical Application
V2
The MCP6141/2/3/4 amplifiers have a gain bandwidth
product of 100 kHz (typical) and are stable for gains of
10 V/V or higher. These specifications make these op
amps appropriate for battery powered applications
where a higher frequency response from the amplifier
is required.
VDD 4
14 VOUTD
13 VIND–
12 VIND+
11 VSS
VINB+ 5
10 VINC+
VINB– 6
9 VINC–
VOUTB 7
8 VOUTC
DS21668D-page 1
MCP6141/2/3/4
NOTES:
DS21668D-page 2
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
1.0
ELECTRICAL
CHARACTERISTICS
VDD – VSS ........................................................................7.0V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Current at Analog Input Pins .........................................±2 mA
†† See Section 4.1.2 “Input Voltage and Current Limits”.
Absolute Maximum Ratings †
Analog Inputs (VIN+, VIN–) †† ........ VSS – 1.0V to VDD + 1.0V
All Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3V
Difference Input Voltage ...................................... |VDD – VSS|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ................................... –65°C to +150°C
Maximum Junction Temperature (TJ)......................... .+150°C
ESD Protection On All Pins (HBM; MM) .............. ≥ 4 kV; 400V
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL and CS is tied low (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Offset
Input Offset Voltage
Drift with Temperature
Power Supply Rejection
VOS
-3
—
+3
mV
ΔVOS/ΔTA
—
±1.8
—
µV/°C
VCM = VSS
VCM = VSS, TA= -40°C to +85°C
ΔVOS/ΔTA
—
±10
—
µV/°C
VCM = VSS,
TA = +85°C to +125°C
PSRR
70
85
—
dB
VCM = VSS
Input Bias Current and Impedance
IB
—
1
—
pA
Industrial Temperature
IB
—
20
100
pA
TA = +85°
Extended Temperature
IB
—
1200
5000
pA
TA = +125°
IOS
—
1
—
pA
13
Input Bias Current
Input Offset Current
Common Mode Input Impedance
ZCM
—
10 ||6
—
Ω||pF
Differential Input Impedance
ZDIFF
—
1013||6
—
Ω||pF
Common-Mode Input Range
VCMR
VSS−0.3
—
VDD+0.3
V
Common-Mode Rejection Ratio
CMRR
62
80
—
dB
VDD = 5V, VCM = -0.3V to 5.3V
CMRR
60
75
—
dB
VDD = 5V, VCM = 2.5V to 5.3V
CMRR
60
80
—
dB
VDD = 5V, VCM = -0.3V to 2.5V
AOL
95
115
—
dB
RL = 50 kΩ to VL,
VOUT = 0.1V to VDD−0.1V
VOL, VOH
VSS + 10
—
VDD − 10
mV
RL = 50 kΩ to VL,
0.5V input overdrive
VOVR
VSS + 100
—
VDD − 100
mV
RL = 50 kΩ to VL,
AOL ≥ 95 dB
ISC
—
2
—
mA
VDD = 1.4V
ISC
—
20
—
mA
VDD = 5.5V
VDD
1.4
—
6.0
V
Note 1
IQ
0.3
0.6
1.0
µA
IO = 0
Common Mode
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Linear Region Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
All parts with date codes February 2008 and later have been screened to ensure operation at VDD = 6.0V. However, the
other minimum and maximum specifications are measured at 1.8V and 5.5V
© 2009 Microchip Technology Inc.
DS21668D-page 3
MCP6141/2/3/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
100
—
kHz
Slew Rate
SR
—
24
—
V/ms
Phase Margin
PM
—
60
—
°
Input Voltage Noise
Eni
—
5.0
—
Input Voltage Noise Density
eni
—
170
—
nV/√Hz f = 1 kHz
Input Current Noise Density
ini
—
0.6
—
fA/√Hz f = 1 kHz
G = +10 V/V
Noise
µVP-P
f = 0.1 Hz to 10 Hz
MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 MΩ to VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3).
Parameters
Sym
Min
Typ
Max
Units
Conditions
CS Logic Threshold, Low
VIL
VSS
—
VSS+0.3
V
CS Input Current, Low
ICSL
—
5
—
pA
CS Logic Threshold, High
VIH
VDD–0.3
—
VDD
V
CS Input Current, High
ICSH
—
5
—
pA
CS = VDD
ISS
—
-20
—
pA
CS = VDD
IOLEAK
—
20
—
pA
CS = VDD
CS Low to Amplifier Output Turn-on Time
tON
—
2
50
ms
G = +1 V/V, CS = 0.3V to
VOUT = 0.9VDD/2
CS High to Amplifier Output High-Z
tOFF
—
10
—
µs
G = +1 V/V, CS = VDD–0.3V to
VOUT = 0.1VDD/2
VHYST
—
0.6
—
V
VDD = 5.0V
CS Low Specifications
CS = VSS
CS High Specifications
CS Input High, GND Current
Amplifier Output Leakage, CS High
Dynamic Specifications
Hysteresis
CS
VIL
VIH
tOFF
tON
VOUT High-Z
ISS -20 pA
(typical)
ICS 5 pA (typical)
High-Z
-0.6 µA
(typical)
-20 pA
(typical)
5 pA (typical)
FIGURE 1-1:
Chip Select (CS) Timing
Diagram (MCP6143 only).
DS21668D-page 4
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND.
Parameters
Sym.
Min.
Typ.
Max. Units
Conditions
Specified Temperature Range
TA
-40
—
+85
TA
-40
—
+125
°C
Extended Temperature parts
Operating Temperature Range
TA
-40
—
+125
°C
(Note 1)
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5L-SOT-23
θJA
—
256
—
°C/W
Thermal Resistance, 6L-SOT-23
θJA
—
230
—
°C/W
Thermal Resistance, 8L-MSOP
θJA
—
206
—
°C/W
Thermal Resistance, 8L-PDIP
θJA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC
θJA
—
163
—
°C/W
Thermal Resistance, 14L-PDIP
θJA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θJA
—
100
—
°C/W
Temperature Ranges
°C
Industrial Temperature parts
Thermal Package Resistances
Note 1:
1.1
The MCP6141/2/3/4 family of Industrial Temperature op amps operates over this extended range, but with
reduced performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute
Maximum specification of +150°C.
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-2. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
VDD
VIN
RN
0.1 µF 1 µF
VOUT
MCP614X
CL
VDD/2 RG
RL
RF
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
VDD
VDD/2
RN
0.1 µF 1 µF
VOUT
MCP614X
CL
VIN
RG
RL
RF
VL
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
© 2009 Microchip Technology Inc.
DS21668D-page 5
MCP6141/2/3/4
NOTES:
DS21668D-page 6
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
2
3
-8
-6 -4 -2
0
2
4
6
8
Input Offset Voltage Drift (µV/°C)
Common Mode Input Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 1.4V.
© 2009 Microchip Technology Inc.
2%
-8
-6 -4 -2
0
2
4
6
8
Input Offset Voltage Drift (µV/°C)
10
VDD = 5.5V
TA = +125°C
TA = +85°C
6.0
5.5
5.0
3.0
2.5
TA = +25°C
TA = -40°C
2.0
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
1.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
TA = +25°C
TA = -40°C
4%
FIGURE 2-5:
Input Offset Voltage Drift
with TA = +85°C to +125°C and VDD = 5.5V.
Input Offset Voltage (µV)
TA = +125°C
TA = +85°C
6%
-10
VDD = 1.4V
-0.4
1000
800
600
400
200
0
-200
-400
-600
-800
-1000
8%
0%
10
FIGURE 2-2:
Input Offset Voltage Drift
with TA = -40°C to +85°C.
10%
1.0
8
12%
0.5
-6 -4 -2
0
2
4
6
Input Offset Voltage Drift (µV/°C)
234 Samples
Representative Lot
VDD = 5.5V
VCM = VSS
TA = +85°C to +125°C
14%
0.0
2267 Samples
TA = -40°C to +85°C
VCM = VSS
-8
10
FIGURE 2-4:
Input Offset Voltage Drift
with TA = +85°C to +125°C and VDD = 1.4V.
Input Offset Voltage.
16%
12%
11%
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
-10
Input Offset Voltage (µV)
-10
-0.5
Percentage of Occurrences
FIGURE 2-1:
-1
0
1
Input Offset Voltage (mV)
234 Samples
Representative Lot
VDD = 1.4V
VCM = VSS
TA = +85°C to +125°C
4.5
-2
12%
11%
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
4.0
-3
Percentage of Occurrences
2396 Samples
VCM = VSS
3.5
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
Percentage of Occurrences
Percentage of Occurrences
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF, and CS is tied low.
Common Mode Input Voltage (V)
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage with VDD = 5.5V.
DS21668D-page 7
MCP6141/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF, and CS is tied low.
6
Input, Output Voltages (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
FIGURE 2-8:
vs. Frequency.
200
150
100
80
50
40
PSRR (VCM = VSS)
90
85
80
CMRR (VDD = 5.0V,
VCM = -0.3V to +5.3V)
75
Referred to Input
1
1
FIGURE 2-9:
Frequency.
DS21668D-page 8
10
10
5.5
FIGURE 2-11:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
95
60
30
5.0
-0.5
0
100
70
20
50
Common Mode Input Voltage (V)
PSRR–
PSRR+
CMRR
90
25
f = 1 kHz
VDD = 5.0V
250
1000
Input Noise Voltage Density
100
CMRR, PSRR (dB)
10
100
Frequency (Hz)
20
4.5
Input Noise Voltage Density
(nV/√Hz)
1
Time
10 (5 ms/div)
15
300
100
0.1
5
FIGURE 2-10:
The MCP6141/2/3/4 Family
Shows No Phase Reversal.
PSRR, CMRR (dB)
Input Noise Voltage Density
(nV/√Hz)
1,000
0
4.0
Input Offset Voltage vs.
-1
3.5
FIGURE 2-7:
Output Voltage.
VOUT
0
3.0
250
VIN
1
2.5
VDD = 5.5V
2
2.0
300
3
1.5
350
4
1.0
VDD = 1.4V
400
VDD = 5.0V
G = +11 V/V
5
0.5
450
0.0
Input Offset Voltage (µV)
500
70
100
1k
100
1,000
Frequency (Hz)
CMRR, PSRR vs.
10k
10,000
-50
-25
FIGURE 2-12:
Temperature.
0
25
50
75
100
Ambient Temperature (°C)
125
CMRR, PSRR vs. Ambient
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF, and CS is tied low.
1k
1000
10000
10k
VDD = 5.5V
VCM = VDD
100
Input Bias, Offset Currents
(pA)
Input Bias and Offset Currents
(pA)
10k
10000
IB
10
| IOS |
1
1
55
65
75
85
95 105
Ambient Temperature (°C)
115
125
FIGURE 2-13:
Input Bias, Offset Currents
vs. Ambient Temperature.
10
| IOS |
TA = +85°C
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
FIGURE 2-16:
Input Bias, Offset Currents
vs. Common Mode Input Voltage.
0
130
100
-30
120
80
Phase
-60
-90
60
40
Gain
-120
20
-150
0
-180
-20
-210
DC Open-Loop Gain (dB)
120
Open-Loop Phase (°)
Open-Loop Gain (dB)
IB
TA = +125°C
100
0.1
0.1
45
-40
-240
0.01
0.1 1.E+
1 1.E+
10 1.E+
100 1.E+
1k 1.E+
10k 100k
1.E- 1.E1.E+
02
01
00 Frequency
01
02(Hz)03
04
05
FIGURE 2-14:
Frequency.
Open-Loop Gain, Phase vs.
100
80
70
120
110
100
RL = 50 kΩ
VOUT = 0.1V to VDD – 0.1V
80
2.0 2.5 3.0 3.5 4.0 4.5
Power Supply Voltage (V)
5.0
FIGURE 2-15:
DC Open-Loop Gain vs.
Power Supply Voltage.
© 2009 Microchip Technology Inc.
VOUT = 0.1V to VDD – 0.1V
5.5
1k
10k
1.E+03
1.E+04
Load Resistance (Ω)
FIGURE 2-17:
Load Resistance.
DC Open-Loop Gain (dB)
130
1.5
VDD = 1.4V
90
140
90
VDD = 5.5V
110
60
100
1.E+02
140
DC Open-Loop Gain (dB)
1k
1000
0.1
0.1
1.0
VDD = 5.5V
130
100k
1.E+05
DC Open-Loop Gain vs.
RL = 50 kΩ
120
VDD = 5.5V
110
100
VDD = 1.4V
90
80
70
0.00
0.05
0.10
0.15
0.20
Output Voltage Headroom;
VDD – VOH or VOL – VSS (V)
0.25
FIGURE 2-18:
DC Open-Loop Gain vs.
Output Voltage Headroom.
DS21668D-page 9
MCP6141/2/3/4
FIGURE 2-19:
Channel to Channel
Separation vs. Frequency (MCP6142 and
MCP6144 only).
90
90
80
80
70
70
60
60
50
50
GBWP
40
40
30
30
20
20
10
10
VDD = 1.4V
0
-50
-25
0
25
50
75 100
Ambient Temperature (°C)
50
0.6
0.5
0.4
0.3
TA = +125°C
TA = +85°C
TA = +25°C
TA = -40°C
0.2
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-21:
Quiescent Current vs.
Power Supply Voltage.
DS21668D-page 10
5.0
4.5
4.0
3.5
5.5
60
50
40
40
30
30
20
10
20
10
VDD = 5.5V
-50
-25
0
25
50
75 100
Ambient Temperature (°C)
0
125
FIGURE 2-23:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature with
VDD = 5.5V.
Output Short Circuit Current
Magnitude (mA)
Quiescent Current
(µA/Amplifier)
0.7
70
PM
(G = +10)
60
35
0.8
80
70
0
0
125
FIGURE 2-20:
Gain Bandwidth Product,
Phase Margin vs. Ambient Temperature with
VDD = 1.4V.
90
GBWP
Phase Margin (°)
PM
(G = +10)
80
Common Mode Input Voltage
FIGURE 2-22:
Gain Bandwidth Product,
Phase Margin vs. Common Mode Input Voltage.
Phase Margin (°)
Gain Bandwidth Product
(kHz)
90
3.0
10k
1.E+04
Frequency (Hz)
Gain Bandwidth Product
(kHz)
80
1k
1.E+03
VDD = 5.0V
-0.5
Input Referred
2.5
90
2.0
100
PM
(G = +10)
1.5
110
120
110
100
90
80
70
60
50
40
30
20
10
0
GBWP
1.0
120
0.5
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
Gain Bandwidth Product
(kHz)
Channel-to-Channel
Separation (dB)
140
Phase Margin (°)
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF, and CS is tied low.
30
25
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Ambient Temperature (°C)
FIGURE 2-24:
Output Short Circuit Current
vs. Power Supply Voltage.
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF, and CS is tied low.
Output Voltage Headroom,
VDD – V OH or V OL – V SS (mV)
Output Voltage Headroom;
VDD – V OH or V OL – V SS (mV)
1000
100
VDD – VOH
10
VOL – VSS
1
0.01
0.1
1
Output Current Magnitude (mA)
10
FIGURE 2-25:
Output Voltage Headroom
vs. Output Current Magnitude.
VDD = 5.5V
RL = 50 kΩ
VOL – VSS
VDD – VOH
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
125
FIGURE 2-28:
Output Voltage Headroom
vs. Ambient Temperature.
10
Maximum Output Voltage
Swing (VP-P)
40
35
Slew Rate (V/ms)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
High-to-Low
25
VDD = 5.5V
20
15
Low-to-High
10
VDD = 1.4V
5
0
-50
-25
0
25
50
75
Ambient Temperature (°C)
FIGURE 2-26:
Temperature.
100
10k
1.E+04
80
G = -10 V/V
RL = 50 kΩ
60
Voltage (20 mV/div)
Output Voltage (20 mV/div)
1k
1.E+03
Frequency (Hz)
FIGURE 2-29:
Maximum Output Voltage
Swing vs. Frequency.
G = +11 V/V
RL = 50 kΩ
60
VDD = 1.4V
1
0.1
100
1.E+02
125
Slew Rate vs. Ambient
80
VDD = 5.5V
40
40
20
20
0
0
-20
-20
-40
-40
-60
-60
-80
-80
0.0
0.1
0.2
0.3 Time
0.4 (100
0.5 µs/div)
0.6 0.7
FIGURE 2-27:
Pulse Response.
0.8
0.9
1.0
Small Signal Non-inverting
© 2009 Microchip Technology Inc.
0.0
0.1
0.2
FIGURE 2-30:
Response.
0.3 Time
0.4 (100
0.5 µs/div)
0.6 0.7
0.8
0.9
1.0
Small Signal Inverting Pulse
DS21668D-page 11
MCP6141/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.4V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF, and CS is tied low.
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0
FIGURE 2-31:
Pulse Response.
25.0
20.0
2
2
5.0
On
4.5
4.0
17.5
3.5
15.0
3.0
VOUT
High-Z
12.5
2.5
10.0
2.0
7.5
1.5
5.0
1.0
CS
2.5
2
Large Signal Non-inverting
VDD = 5.0V
G = +11 V/V
VIN = +3.0V
On
22.5
1 Time
1 (200
1 µs/div)
1
1
0.5
0.0
0.0
0
1
2
3 Time
4 (15 ms/div)
6 7
8
9
10
FIGURE 2-32:
Chip Select (CS) to
Amplifier Output Response Time (MCP6143
only).
Input Current Magnitude (A)
1.E-02
10m
1m
1.E-03
100µ
1.E-04
10µ
1.E-05
1µ
1.E-06
100n
1.E-07
10n
1.E-08
1n
1.E-09
100p
1.E-10
0
0
0
FIGURE 2-34:
Response.
Internal CS Switch Output (V)
0
Output Voltage (V)
0
CS Voltage (V)
VDD = 5.0V
G = -10 V/V
RL = 50 kΩ
4.5
Output Voltage (V)
Output Voltage (V)
5.0
VDD = 5.0V
G = +11 V/V
RL = 50 kΩ
4.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 Time
1 (200
1 µs/div)
1
1
2
2
2
Large Signal Inverting Pulse
VOUT On
Hysteresis
CS
High-to-Low
CS
Low-to-High
VOUT High-Z
VDD = 5.0V
G = +11 V/V
VIN = 3.0V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
CS Voltage (V)
FIGURE 2-35:
Internal Chip Select (CS)
Hysteresis (MCP6143 only).
+125°C
+85°C
+25°C
-40°C
10p
1.E-11
1p
1.E-12
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
FIGURE 2-33:
Input Current vs. Input
Voltage (Below VSS).
DS21668D-page 12
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP6141
MCP6142
MCP6143
MCP6144
MSOP,
PDIP,
SOIC
SOT-23-5
MSOP,
PDIP,
SOIC
MSOP,
PDIP,
SOIC
SOT-23-6
MSOP,
PDIP,
SOIC
Symbol
6
1
1
6
1
1
VOUT, VOUTA
Analog Output (op amp A)
2
4
2
2
4
2
VIN–, VINA–
Inverting Input (op amp A)
3
3
3
3
3
3
VIN+, VINA+
Non-inverting Input (op amp A)
Description
Positive Power Supply
7
5
8
7
6
4
VDD
—
—
5
—
—
5
VINB+
Non-inverting Input (op amp B)
—
—
6
—
—
6
VINB–
Inverting Input (op amp B)
—
—
7
—
—
7
VOUTB
Analog Output (op amp B)
—
—
—
—
—
8
VOUTC
Analog Output (op amp C)
—
—
—
—
—
9
VINC–
Inverting Input (op amp C)
—
—
—
—
—
10
VINC+
Non-inverting Input (op amp C)
4
2
4
4
2
11
VSS
Negative Power Supply
—
—
—
—
—
12
VIND+
Non-inverting Input (op amp D)
—
—
—
—
—
13
VIND–
Inverting Input (op amp D)
—
—
—
—
—
14
VOUTD
Analog Output (op amp D)
—
—
—
8
5
—
CS
Chip Select
1, 5, 8
—
—
1, 5
—
—
NC
No Internal Connection
3.1
Analog Outputs
The output pins are low-impedance voltage sources.
3.2
Analog Inputs
The non-inverting and inverting inputs are
high-impedance CMOS inputs with low bias currents.
3.3
CS Digital Input
3.4
Power Supply Pins
The positive power supply pin (VDD) is 1.4V to 6.0V
higher than the negative power supply pin (VSS). For
normal operation, the other pins are at voltages
between VSS and VDD.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
This is a CMOS, Schmitt-triggered input that places the
part into a low power mode of operation.
© 2009 Microchip Technology Inc.
DS21668D-page 13
MCP6141/2/3/4
NOTES:
DS21668D-page 14
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
4.0
APPLICATIONS INFORMATION
The MCP6141/2/3/4 family of op amps is manufactured
using Microchip’s state of the art CMOS process These
op amps are stable for gains of 10 V/V and higher. They
are suitable for a wide range of general purpose, low
power applications.
See Microchip’s related MCP6041/2/3/4 family of op
amps for applications needing unity gain stability.
4.1
dump any currents onto VDD. When implemented as
shown, resistors R1 and R2 also limit the current
through D1 and D2.
VDD
D1
V1
R1
Rail-to-Rail Input
4.1.1
INPUT VOLTAGE AND CURRENT
LIMITS
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass
quick ESD events within the specified limits.
VDD Bond
Pad
Input
Stage
Bond V –
IN
Pad
VSS Bond
Pad
FIGURE 4-1:
Structures.
Simplified Analog Input ESD
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the currents
(and voltages) at the input pins (see Absolute
Maximum Ratings † at the beginning of Section 1.0
“Electrical Characteristics”). Figure 4-2 shows the
recommended approach to protecting these inputs.
The internal ESD diodes prevent the input pins (VIN+
and VIN–) from going too far below ground, and the
resistors R1 and R2 limit the possible current drawn out
of the input pins. Diodes D1 and D2 prevent the input
pins (VIN+ and VIN–) from going too far above VDD, and
© 2009 Microchip Technology Inc.
VOUT
R2
VSS – (minimum expected V1)
2 mA
VSS – (minimum expected V2)
R2 >
2 mA
R1 >
FIGURE 4-2:
Inputs.
Protecting the Analog
It is also possible to connect the diodes to the left of the
resistor R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistors then serve as in-rush current
limiters; the DC current into the input pins (VIN+ and
VIN–) should be very small.
A significant amount of current can flow out of the
inputs (through the ESD diodes) when the common
mode voltage (VCM) is below ground (VSS); see
Figure 2-33. Applications that are high impedance may
need to limit the usable voltage range.
4.1.3
VIN+ Bond
Pad
MCP604X
V2
PHASE REVERSAL
The MCP6141/2/3/4 op amps are designed to not
exhibit phase inversion when the input pins exceed the
supply voltages. Figure 2-10 shows an input voltage
exceeding both supplies with no phase inversion.
4.1.2
D2
NORMAL OPERATION
The input stage of the MCP6141/2/3/4 op amps uses
two differential input stages in parallel. One operates at
a low common mode input voltage (VCM), while the
other operates at a high VCM. With this topology, the
device operates with a VCM up to 300 mV above VDD
and 300 mV below VSS. The input offset voltage is
measured at VCM = VSS – 0.3V and VDD + 0.3V to
ensure proper operation.
There are two transitions in input behavior as VCM is
changed. The first occurs, when VCM is near
VSS + 0.4V, and the second occurs when VCM is near
VDD – 0.5V (see Figure 2-3 and Figure 2-6). For the
best distortion performance with non-inverting gains,
avoid these regions of operation.
DS21668D-page 15
MCP6141/2/3/4
4.2
Rail-to-Rail Output
There are two specifications that describe the output
swing capability of the MCP6141/2/3/4 family of op
amps. The first specification (Maximum Output Voltage
Swing) defines the absolute maximum swing that can
be achieved under the specified load condition. Thus,
the output voltage swings to within 10 mV of either
supply rail with a 50 kΩ load to VDD/2. Figure 2-10
shows how the output voltage is limited when the input
goes beyond the linear region of operation.
The second specification that describes the output
swing capability of these amplifiers is the Linear Output
Voltage Range. This specification defines the
maximum output swing that can be achieved while the
amplifier still operates in its linear region. To verify
linear operation in this range, the large signal DC
Open-Loop Gain (AOL) is measured at points inside the
supply rails. The measurement must meet the specified
AOL condition in the specification table.
4.3
Output Loads and Battery Life
The MCP6141/2/3/4 op amp family has outstanding
quiescent current, which supports battery-powered
applications. There is minimal quiescent current
glitching when Chip Select (CS) is raised or lowered.
This prevents excessive current draw, and reduced
battery life, when the part is turned off or on.
Heavy resistive loads at the output can cause
excessive battery drain. Driving a DC voltage of 2.5V
across a 100 kΩ load resistor will cause the supply
current to increase by 25 µA, depleting the battery 43
times as fast as IQ (0.6 µA, typical) alone.
High frequency signals (fast edge rate) across
capacitive loads will also significantly increase supply
current. For instance, a 0.1 µF capacitor at the output
presents an AC impedance of 15.9 kΩ (1/2πfC) to a
100 Hz sinewave. It can be shown that the average
power drawn from the battery by a 5.0 VP-P sinewave
(1.77 Vrms), under these conditions, is:
EQUATION 4-1:
PSupply = (VDD - VSS) (IQ + VL(p-p) f CL )
= (5V)(0.6 µA + 5.0Vp-p · 100Hz · 0.1µF)
= 3.0 µW + 50 µW
This will drain the battery 18 times as fast as IQ alone.
DS21668D-page 16
4.4
Stability
4.4.1
NOISE GAIN
The MCP6141/2/3/4 op amp family is designed to give
high bandwidth and slew rate for circuits with high noise
gain (GN) or signal gain. Low gain applications should
be realized using the MCP6041/2/3/4 op amp family;
this simplifies design and implementation issues.
Noise gain is defined to be the gain from a voltage
source at the non-inverting input to the output when all
other voltage sources are zeroed (shorted out). Noise
gain is independent of signal gain and depends only on
components in the feedback loop. The amplifier circuits
in Figure 4-3 and Figure 4-4 have their noise gain
calculated as follows:
EQUATION 4-2:
RF
G N = 1 + ------- ≥ 10 V/V
RG
In order for the amplifiers to be stable, the noise gain
should meet the specified minimum noise gain. Note
that a noise gain of GN = +10 V/V corresponds to a
non-inverting signal gain of G = +10 V/V, or to an
inverting signal gain of G = -9 V/V.
RIN
VIN
MCP614X
RG
VOUT
RF
FIGURE 4-3:
Noise Gain for Non-inverting
Gain Configuration.
RG
RF
VOUT
VIN
RIN
MCP614X
FIGURE 4-4:
Noise Gain for Inverting
Gain Configuration.
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
Figure 4-5 shows three example circuits that are
unstable when used with the MCP6141/2/3/4 family.
The unity gain buffer and low gain amplifier
(non-inverting or inverting) are at gains that are too low
for stability (see Equation 4-2).The Miller integrator’s
capacitor makes it reach unity gain at high frequencies,
causing instability.
Note:
The three circuits shown in Figure 4-5 are
not to be used with the MCP6141/2/3/4 op
amps. They are included for illustrative
purposes only.
When driving large capacitive loads with these op
amps (e.g., > 60 pF when G = +10), a small series
resistor at the output (RISO in Figure 4-6) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will be generally lower than the bandwidth
with no capacitive load.
RG
RF
RISO
VOUT
VA
CL
MCP614X
Unity Gain Buffer
VB
VOUT
VIN
Low Gain Amplifier
RG
RF
VOUT
V1
RN
MCP614X
V2
FIGURE 4-6:
Output Resistor, RISO
stabilizes large capacitive loads.
Figure 4-7 gives recommended RISO values for
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit’s noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1 + |Signal Gain| (e.g., -9 V/V gives GN = +10 V/V).
100,000
100k
RF
1 + ------- < 10
RG
Recommended R ISO (Ω)
MCP614X
10k
10,000
Miller Integrator
R
C
VOUT
VIN
GN = +10
GN = +20
GN ≥ +50
1k
1,000
1p
10p
100p
1n
1.E+00
1.E+01
1.E+02
1.E+03
Normalized Load Capacitance; CL/GN (F)
MCP614X
FIGURE 4-7:
Recommended RISO Values
for Capacitive Loads.
FIGURE 4-5:
Examples of Unstable
Circuits for the MCP6141/2/3/4 Family.
4.4.2
CAPACITIVE LOADS
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. A unity gain buffer (G = +1) is the most
sensitive to capacitive loads, though all gains show the
same general behavior.
© 2009 Microchip Technology Inc.
After selecting RISO for your circuit, double check the
resulting frequency response peaking and step
response overshoot. Modify RISO’s value until the
response is reasonable. Bench evaluation and
simulations with the MCP6141/2/3/4 SPICE macro
model are helpful.
4.5
MCP6143 Chip Select
The MCP6143 is a single op amp with Chip Select
(CS). When CS is pulled high, the supply current drops
to 50 nA (typical) and flows through the CS pin to VSS.
When this happens, the amplifier output is put into a
high impedance state. By pulling CS low, the amplifier
is enabled. If the CS pin is left floating, the amplifier will
not operate properly. Figure 1-1 shows the output
voltage and supply current response to a CS pulse.
DS21668D-page 17
MCP6141/2/3/4
4.6
Supply Bypass
With this family of operational amplifiers, the power
supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good high frequency performance. It can use a bulk
capacitor (i.e., 1 µF or larger) within 100 mm to provide
large, slow currents. This bulk capacitor is not required
for most applications and can be shared with other
nearby analog parts.
4.7
Unused Op Amps
Guard Ring
FIGURE 4-9:
for Inverting Gain.
1.
An unused op amp in a quad package (MCP6144)
should be configured as shown in Figure 4-8. These
circuits prevent the output from toggling and causing
crosstalk.
Circuits A sets the op amp near its minimum noise gain.
The resistor divider produces any desired reference
voltage within the output voltage range of the op amp;
the op amp buffers that reference voltage. Circuit B
uses the minimum number of components and
operates as a comparator, but it may draw more
current.
¼ MCP6144 (A)
¼ MCP6144 (B)
VDD
VDD
R1
VDD
R
10R
R2
Example Guard Ring Layout
Non-inverting Gain and Unity Gain Buffer:
a) Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the
PCB surface.
b) Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
common mode input voltage.
Inverting Gain and Transimpedance Gain
(convert current to voltage, such as photo
detectors) amplifiers:
a) Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b) Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
VREF
R2
V REF = V DD ⋅ -------------------R1 + R2
FIGURE 4-8:
4.8
2.
VIN– VIN+
Unused Op Amps.
PCB Surface Leakage
In applications where low input bias current is critical,
printed circuit board (PCB) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012Ω. A 5V difference would
cause 5 pA of current to flow, which is greater than the
MCP6141/2/3/4 family’s bias current at +25°C (1 pA,
typical).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 4-9.
DS21668D-page 18
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
4.9
4.9.1
Application Circuits
4.9.2
BATTERY CURRENT SENSING
The MCP6141/2/3/4 op amps’ Common Mode Input
Range, which goes 0.3V beyond both supply rails,
supports their use in high side and low side battery
current sensing applications. The very low quiescent
current (0.6 µA, typical) help prolong battery life, and
the rail-to-rail output supports detection low currents.
Figure 4-10 shows a high side battery current sensor
circuit. The 1 kΩ resistor is sized to minimize power
losses. The battery current (IDD) through the 1 kΩ
resistor causes its top terminal to be more negative
than the bottom terminal. This keeps the common
mode input voltage of the op amp below VDD, which is
within its allowed range. When no current is flowing, the
output will be at its Maximum Output Voltage Swing
(VOH), which is virtually at VDD.
.
IDD
INVERTING SUMMING AMPLIFIER
The MCP6141/2/3/4 op amp is well suited for the
inverting summing amplifier shown in Figure 4-11 when
the resistors at the input (R1, R2, and R3) make the
noise gain at least 10 V/V. The output voltage (VOUT) is
a weighted sum of the inputs (V1, V2, and V3), and is
shifted by the VREF input. The necessary calculations
follow in Equation 4-3.
.
R1
V1
R2
V2
RF
V3
MCP614X
VREF
FIGURE 4-11:
1.4V
to
6.0V
VOUT
R3
Summing Amplifier.
VDD
1 kΩ
EQUATION 4-3:
MCP6141
VOUT
Noise Gain:
1- + ----1- + ----1-⎞ ≥ 10 V/V
G N = 1 + R F ⎛ ----⎝R
R 2 R 3⎠
1
100 kΩ
1 MΩ
V OUT = V DD – ( 1 kΩ ) ( 11 V/V )I DD
FIGURE 4-10:
Sensor.
High Side Battery Current
© 2009 Microchip Technology Inc.
Signal Gains:
G1 = –RF ⁄ R1
G2 = –RF ⁄ R2
G3 = –RF ⁄ R3
Output Signal:
V OUT = V 1 G 1 + V 2 G 2 + V 3 G 3 + V REF G N
DS21668D-page 19
MCP6141/2/3/4
NOTES:
DS21668D-page 20
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
5.0
DESIGN AIDS
Microchip provides the basic design tools needed for
the MCP6141/2/3/4 family of op amps.
5.1
SPICE Macro Model
The latest SPICE macro model for the MCP6141/2/3/4
op amps is available on the Microchip web site at
www.microchip.com. This model is intended to be an
initial design tool that works well in the op amp’s linear
region of operation over the temperature range. See
the model file for information on its capabilities.
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
5.2
FilterLab® Software
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter (using
op amps) design. Available at no cost from the
Microchip web site at www.microchip.com/filterlab, the
FilterLab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.3
Mindi™ Simulation Tool
Microchip’s Mindi™ simulation tool aids in the design of
various circuits useful for active filter, amplifier and
power-management applications. It is a free online
simulation tool available from the Microchip web site at
www.microchip.com/mindi. This interactive simulator
enables designers to quickly generate circuit diagrams,
simulate circuits. Circuits developed using the Mindi
simulation tool can be downloaded to a personal
computer or workstation.
5.4
5.5
Analog Demonstration and
Evaluation Boards
Microchip offers a broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help you achieve faster time to market. For
a complete listing of these boards and their
corresponding user’s guides and technical information,
visit the Microchip web site at www.microchip.com/
analogtools.
Two of our boards that are especially useful are:
• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,
P/N SOIC8EV
• 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N
SOIC14EV
5.6
Application Notes
The following Microchip Analog Design Note and
Application Notes are available on the Microchip web
site at www.microchip.com/appnotes and are
recommended as supplemental reference resources.
• ADN003: “Select the Right Operational Amplifier
for your Filtering Circuits”, DS21821
• AN722: “Operational Amplifier Topologies and DC
Specifications”, DS00722
• AN723: “Operational Amplifier AC Specifications
and Applications”, DS00723
• AN884: “Driving Capacitive Loads With Op
Amps”, DS00884
• AN990: “Analog Sensor Conditioning Circuits –
An Overview”, DS00990
These application notes and others are listed in the
design guide:
• “Signal Chain Design Guide”, DS21825
Microchip Advanced Part Selector
(MAPS)
MAPS is a software tool that helps semiconductor
professionals efficiently identify Microchip devices that
fit a particular design requirement. Available at no cost
from the Microchip website at www.microchip.com/
maps, the MAPS is an overall selection tool for
Microchip’s product portfolio that includes Analog,
Memory, MCUs and DSCs. Using this tool you can
define a filter to sort features for a parametric search of
devices and export side-by-side technical comparison
reports. Helpful links are also provided for Data sheets,
Purchase, and Sampling of Microchip parts.
© 2009 Microchip Technology Inc.
DS21668D-page 21
MCP6141/2/3/4
NOTES:
DS21668D-page 22
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
Example:
5-Lead SOT-23 (MCP6141)
Device
XXNN
MCP6141
E-Temp Code
Example:
6-Lead SOT-23 (MCP6143)
Device
XXNN
MCP6143
E-Temp Code
AW25
AWNN
Note: Applies to 6-Lead SOT-23
Example:
8-Lead MSOP
XXXXXX
6143I
YWWNNN
918256
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
XXXXXXXX
XXXXYYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
*
e3
Example:
MCP6141
I/P256
0918
8-Lead SOIC (150 mil)
Note:
AS25
ASNN
Note: Applies to 5-Lead SOT-23
OR
MCP6141
E/P e3 256
0918
Example:
MCP6142
I/SN0918
256
OR
MCP6142E
SN e3 0918
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009 Microchip Technology Inc.
DS21668D-page 23
MCP6141/2/3/4
Package Marking Information (Continued)
Example:
14-Lead PDIP (300 mil) (MCP6144)
MCP6144-I/P
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
0918256
MCP6144
I/P e3
0918256
OR
14-Lead SOIC (150 mil) (MCP6144)
Example:
MCP6144ISL
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
0918256
MCP6144
e3
I/SL^^
0918256
OR
Example:
14-Lead TSSOP (MCP6144)
XXXXXXXX
YYWW
6144ST
0918
NNN
256
OR
6144EST
0918
256
DS21668D-page 24
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
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DS21668D-page 25
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DS21668D-page 27
MCP6141/2/3/4
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© 2009 Microchip Technology Inc.
MCP6141/2/3/4
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© 2009 Microchip Technology Inc.
DS21668D-page 29
MCP6141/2/3/4
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MCP6141/2/3/4
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DS21668D-page 31
MCP6141/2/3/4
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DS21668D-page 32
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
APPENDIX A:
REVISION HISTORY
Revision D (May 2009)
Revision A (September 2002)
The following is the list of modifications:
• Original Release of this Document.
1.
2.
3.
4.
DC Electrical Charactistics table: Corrected
formatting issue in Output section.
AC Electrical Characteristics table: Slew Rate
- changed typical value from 3.0 to 24. Changed
Phase Margin from 65 to 60. Changed Phase
Margin Condition from G=+1 to G=+10 V/V.
Updated Package Outline Drawings
Updated Revision History.
Revision C (December 2007)
• Updated Figures 2.4 and 2.5
• Expanded Analog Input Absolute Max Voltage
Range (applies retroactively)
• Expanded maximum operating VDD (going
forward)
• Section 1.0 “Electrical Characteristics”
updated
• Section 2.0 “Typical Performance Curves”
updated
• Section 4.0 “Applications Information”
- Updated input stage explanation
• Section 5.0 “Design Aids” updated
Revision B (November 2005)
The following is the list of modifications:
1.
2.
3.
4.
5.
6.
7.
8.
Added the following:
a) SOT-23-5 package for the MCP6141 single
op amps.
b) SOT-23-6 package for the MCP6143 single
op amps with Chip Select.
c) Extended Temperature (-40°C to +125°C)
op amps.
Updated
specifications
in
Section 1.0
“Electrical Characteristics” for E-temp parts.
Corrected and updated plots in Section 2.0
“Typical Performance Curves”.
Added Section 3.0 “Pin Descriptions”.
Updated
Section 4.0
“Applications
Information” and added section on unused op
amps.
Updated Section 5.0 “Design Aids” to include
FilterLab.
Added SOT-23-5 and SOT-23-6 packages and
corrected package marking information in
Section 6.0 “Packaging Information”.
Added Appendix A: “Revision History”.
© 2009 Microchip Technology Inc.
DS21668D-page 33
MCP6141/2/3/4
NOTES:
DS21668D-page 34
© 2009 Microchip Technology Inc.
MCP6141/2/3/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
-X
/ XX
Examples:
a)
Device
Device:
Temperature
Range
MCP6141:
MCP6141T:
MCP6142:
MCP6142T:
MCP6143:
MCP6143T:
MCP6144:
MCP6144T:
Package
Single Op Amp
Single Op Amp
(Tape and Reel for SOT-23, SOIC, MSOP)
Dual Op Amp
Dual Op Amp
(Tape and Reel for SOIC and MSOP)
Single Op Amp w/ CS
Single Op Amp w/ CS
(Tape and Reel for SOT-23, SOIC, MSOP)
Quad Op Amp
Quad Op Amp
(Tape and Reel for SOIC and TSSOP)
Temperature Range: I
E
= -40°C to +85°C (industrial)
= -40°C to +125°C (extended)
Package:
= Plastic Small Outline Transistor (SOT-23),
6-lead (Tape and Reel - MCP6143 only)
= Plastic Micro Small Outline (MSOP), 8-lead
= Plastic Small Outline Transistor (SOT-23),
5-lead (Tape and Reel - MCP6141 only)
= Plastic DIP (300 mil body), 8-lead, 14-lead
= Plastic SOIC (3.9 mm body), 14-lead
= Plastic SOIC (3.9 mm body), 8-lead
= Plastic TSSOP (4.4 mm body), 14-lead
CH
MS
OT
P
SL
SN
ST
© 2009 Microchip Technology Inc.
MCP6141-I/P:
b)
Industrial Temperature
8 lead PDIP package.
MCP6141T-E/OT: Tape and Reel,
Extended Temperature
5 lead SOT-23 package.
a)
MCP6142-I/SN:
b)
Industrial Temperature
8 lead SOIC package.
MCP6142T-E/MS: Tape and Reel,
Extended Temperature
8 lead MSOP package.
a)
MCP6143-I/P:
b)
Industrial Temperature,
8 lead PDIP package.
MCP6143T-E/CH: Tape and Reel,
Extended Temperature
6 lead SOT-23 package.
a)
MCP6144-I/SL:
b)
Industrial Temperature
14 lead PDIP package.
MCP6144T-E/ST: Tape and Reel,
Extended Temperature
14 lead TSSOP package.
DS21668D-page 35
MCP6141/2/3/4
NOTES:
DS21668D-page 36
© 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, rfPIC, SmartShunt and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
FilterLab, Hampshire, Linear Active Thermistor, MXDEV,
MXLAB, SEEVAL, SmartSensor and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, nanoWatt XLP,
PICkit, PICDEM, PICDEM.net, PICtail, PIC32 logo, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select
Mode, Total Endurance, TSHARC, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2009 Microchip Technology Inc.
DS21668D-page 37
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4080
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
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Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
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Tel: 678-957-9614
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Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
03/26/09
DS21668D-page 38
© 2009 Microchip Technology Inc.