VS-VSKD600 Series www.vishay.com Vishay Semiconductors Standard Diodes, 600 A (SUPER MAGN-A-PAK Power Modules) FEATURES • High current capability • High surge capability • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate • Industrial standard package • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SUPER MAGN-A-PAK TYPICAL APPLICATIONS • Rectifying bridge for large motor drives PRODUCT SUMMARY • Rectifying bridge for large UPS IF(AV) 600 A Type Modules - Diode, High Voltage Package SMAP Circuit Two SCRs doubler circuit MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) TC IF(RMS) IFSM I2t VALUES UNITS 600 A 100 °C 942 A TC 100 °C 50 Hz 19 000 60 Hz 20 100 50 Hz 1805 60 Hz 1683 I2√t 18 050 A kA2s kA2√s VRRM Range 800 to 2000 V TStg, TJ Range -40 to +150 °C VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ MAXIMUM mA 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-VSKD600.. 50 Revision: 29-Apr-15 Document Number: 93583 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) Maximum RMS forward current IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current IFSM TEST CONDITIONS Maximum I2√t for fusing I2√t A 100 °C 180° conduction, half sine wave at TC = 100 °C 942 A t = 10 ms 19.0 t = 8.3 ms t = 10 ms t = 10 ms I2t UNITS 600 180° conduction, half sine wave t = 8.3 ms Maximum I2t for fusing VALUES t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 100 % VRRM reapplied No voltage reapplied 20.1 kA 16.2 17.2 Sinusoidal half wave, initial TJ = TJ maximum 1805 1683 kA2s 1319 100 % VRRM reapplied 1230 t = 0.1 ms to 10 ms, no voltage reapplied kA2√s 18 050 Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.70 High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.77 V Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.28 High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.25 Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse 1.45 V VALUES UNITS 3000 V 50 mA Maximum forward voltage drop VFM mΩ BLOCKING PARAMETER SYMBOL TEST CONDITIONS RMS insulation voltage VINS t=1s Maximum peak reverse and off-state leakage current IRRM TJ = TJ maximum, rated VRRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per junction RthJC Maximum thermal resistance, case to heatsink per module RthC-hs VALUES UNITS -40 to 150 °C DC operation 0.065 Mounting surface smooth, flat and greased 0.02 K/W SMAP to heatsink Mounting torque ± 10 % TEST CONDITIONS busbar to SMAP A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 6 to 8 Nm 12 to 15 Approximate weight 1500 Case style See dimensions - link at the end of datasheet g SUPER MAGN-A-PAK ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.009 0.006 120° 0.011 0.011 90° 0.014 0.015 60° 0.021 0.022 30° 0.037 0.038 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 29-Apr-15 Document Number: 93583 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series VSKD600.. Series RthJC (DC) = 0.065 K/W 140 130 Conduction Angle 120 110 100 30° 90° 120° 90 180° 80 0 Maximum Allowable Case Temperature (°C) 60° 100 200 300 400 500 600 Maximum Average Forward Power Loss (W) 150 Vishay Semiconductors 1000 800 700 600 500 400 RMS Limit Conduction Period 300 VSKD600.. Series Per Junction TJ = 150°C 200 100 0 700 0 200 400 600 800 1000 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics 150 VSKD600.. Series R thJC (DC) = 0.065 K/W 140 130 120 Conduction Period 110 60° 100 30° 90° 90 120° 180° DC 80 18000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 150°C @ 60 Hz 0.0083 s 14000 @ 50 Hz 0.0100 s 16000 12000 10000 8000 VSKD600.. Series Per Junction 6000 4000 0 200 400 600 800 1000 1 700 180° 120° 90° 60° 30° 500 RMS Limit 400 300 Conduction Angle 200 VSKD600.. Series Per Junction TJ = 150°C 100 0 0 100 200 300 400 500 100 600 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave Forward Current (A ) Fig. 2 - Current Ratings Characteristics 600 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average Forward Current (A) Maximum Average Forward Power Loss (W) DC 180° 120° 90° 60° 30° 900 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (°C) www.vishay.com 20000 18000 16000 Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Initial TJ = 150°C No Voltage Reapplied Rated VRRM Reapplied 14000 12000 10000 8000 6000 4000 0.01 VSKD600.. Series Per Junction 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 29-Apr-15 Document Number: 93583 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series Vishay Semiconductors 1000 = W K/ W K/ 2 0.0 W K/ -D ta el 180° (Sine) SA 4 K/ W 0. 12 K/ W 0.1 6K /W 800 600 6 0. 08 DC R th 0 0. 0 0. 0.2 5 400 VSKD600.. Series Per Junction TJ = 150°C 200 R Maximum Total Forward Power Loss (W) www.vishay.com K/ W 0.3 5K /W 0.5 K /W 0 0 200 400 600 800 1000 0 Total RMS Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) Fig. 7 - Forward Power Loss Characteristics SA = /W 1K 0.0 K/ W 4K / W 0.0 5K /W 0. 0 -D ta el 1500 R th 2000 W K/ 0. 03 180° (Sine) 180° (Rect) 2500 02 0. 0.0 8K /W 0.12 1000 R Maximum Total Power Loss (W) 3000 K/ W 2 x VSKD600.. Series 0.2 K /W Single Phase Bridge Connected TJ = 150°C 500 0 0 200 400 600 800 1000 1200 0 Total Output Current (A) 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C ) Fig. 8 - Forward Power Loss Characteristics R th 4000 SA 0. 02 3000 1500 0.08 3 x VSKD600.. Series Three Phase Bridge Connected T J = 150°C 1000 500 R 0.0 5 ta el 2000 -D 2500 W K/ K/ W 0.0 3K /W 120° (Rect) 01 0. 3500 = Maximum Total Power Loss (W) 4500 K/ W K/ W 0.12 K /W 0.2 K/ W 0 0 300 600 900 1200 1500 Total Output Current (A) 1800 0 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C ) Fig. 9 - Forward Power Loss Characteristics Revision: 29-Apr-15 Document Number: 93583 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-VSKD600 Series www.vishay.com Transient Thermal Impedance Z thJC (K/W ) Vishay Semiconductors 0.1 VSKD600.. Series Per Junction 0.01 Steady State Value: R thJC = 0.065 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristic ORDERING INFORMATION TABLE VS- VSK Device code 1 2 D 600 3 4 - 20 5 1 - Vishay Semiconductors product 2 - Module type 3 - Circuit configuration D = 2 diodes in series (see Circuit Configuration table) 4 - Current rating 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE Two diodes doubler circuit D CIRCUIT DRAWING 3 - 2 + ~ 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95088 Revision: 29-Apr-15 Document Number: 93583 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super MAGN-A-PAK Diode 52 (2.05) DIMENSIONS in millimeters (inches) Ø 6.5 mm ± 0.3 mm x 4 Holes (Typ.) 31.0 (1.22) 44.0 (1.73) 50.0 (1.97) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 3 2 26.0 (0.98) 26.0 (0.98) 20.1 (0.78) 1 28.0 (1.10) 60.0 (2.36) 48.0 (1.89) M10 36.4 (1.14) 4.5 (0.20) 112.0 (4.41) 124.0 (4.88) 1.0 (0.039) 149.0 (5.67) Revision: 20-Aug-13 Document Number: 95088 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Super MAGN-A-PAK Thyristor/Diode DIMENSIONS in millimeters (inches) 52 (2.05) 16 (0.63) 9.9 ± 0.5 (0.39 ± 0.02) Ø 6.5 mm ± 0.3 mm x 4 Holes (Typ.) 31.0 (1.22) 44.0 (1.73) 50.0 (1.97) Fast-on tabs 2.8 x 0.8 (0.11 x 0.03) 3 2 26.0 (0.98) 26.0 (0.98) 4 6 7 20.1 (0.78) 1 5 28.0 (1.10) 48.0 (1.89) 60.0 (2.36) M10 36.4 (1.14) 4.5 (0.20) 112.0 (4.41) 124.0 (4.88) 5, 6 = Gate 4, 7 = Cathode 1.0 (0.039) 149.0 (5.67) Revision: 09-Mar-15 Document Number: 95283 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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