319

NTE319
Silicon NPN Transistor
VHF Amp with Forward AGC
Features:
D Low Feedback Capacity (CCB) −0.13pF Typ, 0.22pF Max
D High Unneutralized Power Gain − 27dB Min at 45MHz
D VAGC Guaranteed for −30dB and −50dB at 45MHz
Absolute Maximum Ratings: (Note 1)
Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector−to−Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V
Total Dissipation (Note 3), PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.260W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.175W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C
Note 1. These ratings are limiting values above which the serviceability of any individual semiconductor
device may be impaired.
Note 2. Rating refers to a high−current point where collector−to−emitter voltage is lowest.
Note 3. These ratings give a maximum junction temperature of 175°c and junction−to−case thermal
resistance of 583°C/W (derating factor of 1.73mW/°C); junction−to−ambient thermal resistance
of 850°C/W (derating factor of 1.17mW/°C).
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Power Gain
PG
VBE = 2V, f = 45MHz
27
29
−
dB
Noise Figure
NF
VBE = 2V, f = 45MHz
−
2.7
5.0
dB
VCC = 12V, f = 45MHz
3.3
4.15
5.0
V
VCC = 12V, f = 45MHz
−
6.15
7.5
V
AGC Voltage for 30dB Gain Reduction
VAGC
AGC Voltage for 50dB Gain Reduction
Collector Current for 30dB Gain Reduction
IAGC
VCC = 12V, f = 45MHz
−
7.2
−
mA
Collector−to−Base Capacitance
Ccb
VCB = 10V, IE = 0, f = 1MHz
−
0.13
0.22
pF
DC Current Gain
hFE
VCE = 10V, IC = 2mA
20
80
220
20
−
−
V
VCB = 20V, IE = 0
−
−
50
nA
Collector−Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
20
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100µA, IC = 0
3.0
−
−
V
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
VCEO(sus) IC = 1mA, IB = 0, Note 2
ICBO
Note 2. Rating refers to a high−current point where collector−to−emitter voltage is lowest.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector Saturation Voltage
VCE(sat)
Test Conditions
Min
Typ
Max
Unit
IC = 1mA, IB = 5mA
−
−
2.75
V
High Frequency Current Gain
hFE
VCE = 10V, IC = 2mA, f = 100MHz
3
5
−
V
Input Resistance, Common Emitter
Riep
VCE = 10V, IC = 2mA, f = 45MHz
−
400
−
W
Output Resistance, Common Emitter
Roep
−
67
−
kΩ
Input Capacitance, Common Emitter
Ciep
−
16
−
pF
Output Capacitance, Common Emitter
Coep
−
1.2
−
pF
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Emitter
Base
Collector
45°
Case
.040 (1.02)
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