MBRD6200 Technical Data Data Sheet N1104, Rev. A Green Products MBRD6200 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DPAK • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBRD6200 Technical Data Data Sheet N1104, Rev. A Green Products Pad Layout Dimensions: In mm Marking Diagram: Where XXXXX is YYWWL MBR D 6 200 SSG YY WW L = Device Type = Package type = Forward Current (6A) = Reverse Voltage (200V) = SSG = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 Ordering Information: Device MBRD6200 Package DPAK (Pb-Free) Shipping 2500pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBRD6200 Technical Data Data Sheet N1104, Rev. A Green Products Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR Condition - Average Forward Current IF(AV) 50% duty cycle @TC =105°C, rectangular wave form Peak One Cycle Non-Repetitive Surge Current(per leg) IFSM 8.3 ms, half Sine pulse Max. Units 200 V 6 A 128 A Max. Units 0.92 V 1 mA 7 mA 150 pF 8.0 nH 10,000 V/μs Specification -55 to +150 -55 to +150 Units °C °C Electrical Characteristics: Characteristics Forward Voltage Drop (per leg)* Reverse Current (per leg)* Symbol VF1 IR1 IR2 Junction Capacitance (per leg) Typical Series Inductance (per leg) Voltage Rate of Change * CT LS dv/dt Condition @ 6 A, Pulse, TJ = 25 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Range Storage Temperature Range Typical Thermal Resistance Junction to Case(per leg) Typical Thermal Resistance Junction to Case (per package) Approximate Weight Case Style Symbol TJ Tstg Condition - RθJC DC operation 3.5 °C/W RθJC DC operation 1.75 °C/W 0.39 g wt DPAK • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • MBRD6200 Technical Data Data Sheet N1104, Rev. A TJ=25℃ 100 10 0 5 10 15 20 25 30 35 40 1000 100 TJ=125℃ 10 1 TJ=25℃ 0.1 0.01 10 20 30 40 50 60 70 80 Fig.1-Typical Junction Capacitance TJ=125℃ 10 TJ=25℃ 1 0.6 100 Fig.2-Typical Reverse Characteristics 100 0.5 90 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Instantaneous Forward Current (A) Jun ction Capacitan ce (PF ) 1000 Instantaneous Reverse Current ( μA) Green Products 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 1.1 MBRD6200 Technical Data Data Sheet N1104, Rev. A Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. 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