2989

NTE2989
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D High Speed Switching
D Low On−Resistance
D No Secondary Breakdown
D Low Driving Power
D High Voltage
D Repetitive Avalanche Rated
D
G
Applications:
D Switching Regulators
D UPS
D DC−DC Converters
D General Purpose Power Amplifier
S
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Avalanche Current, Repetitive or Non−Repetitive (Tch  +150C), IAR . . . . . . . . . . . . . . . . . . . . . 10A
Avalanche Energy, EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64.7mJ
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Symbol
Test Conditions
Min
Typ
Max
Unit
600
−
−
V
3.5
4.0
4.5
V
Tch = +25C
−
10
500
A
Tch = +125C
−
0.2
1.0
mA
V(BR)DSS ID = 1mA, VGS = 0V
VGS(th)
IDSS
ID = 1mA, VDS = VGS
VDS = 600V,
VGS = 0V
Rev. 10−13
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Gate−Source Leakage Current
Drain−Source On−State Resistance
Symbol
Test Conditions
Min
Typ
Max
Unit
IGSS
VGS = 30V, VDS = 0V
−
10
100
nA
RDS(on)
ID = 4.5A, VGS = 10V
−
0.85
1.0

Forward Transconductance
gfs
ID = 5A, VDS = 25V
3
6
−
S
Input Capacitance
Ciss
VDS = 25V, VGS = 0V, f = 1MHz
−
1100
1700
pF
Output Capacitance
Coss
−
170
260
pF
Reverse Transfer Capacitance
Crss
−
74
120
pF
Turn−On Time, ton
(ton = td(on) + tr)
td(on)
−
25
40
ns
−
70
110
ns
Turn−Off Time, toff
(toff = td(off) + tf)
td(off)
−
75
120
ns
tf
−
40
60
ns
VCC = 300V, ID = 10A, VGS = 10V,
RGS = 10
tr
Avalanche Capability
IAV
L = 100H, Tch = +25C
10
−
−
A
Diode Forward On−Voltage
VSD
IF = 2 x IDR, VGS = 0V, Tch = +25C
−
1.0
1.5
V
IF = IDR, VGS = 0V,
−dIF/dt = 100A/s, Tch = +25C
−
500
−
ns
−
6.5
−
C
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
.114 (2.9)
.181 (4.6) .126 (3.2) Dia Max
Max
.405 (10.3)
Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)