BAW56T(BAV70T)(BAV99T) N1727 REV.-

BAW56T
BAV70T
BAV99T
Green Products
Technical Data
Data Sheet N1727, Rev. -
BAW56T/BAV70T/BAV99T SWITCHING DIODE
Features:
•
•
•
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and ESD Protection
BAW56T
MARKING:JD
BAV70T
BAV99T
MARKING:JJ
MARKING:JE
Solid dot = Green molding compound device, if none, the normal device.
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BAW56T
BAV70T
BAV99T
Green Products
Technical Data
Data Sheet N1727, Rev. -
Mechanical Dimensions: In mm/Inches
SOT-523
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BAW56T
BAV70T
BAV99T
Green Products
Technical Data
Data Sheet N1727, Rev. -
Ordering Information:
Device
BAW56T/BAV70T/BAV99T
Package
Shipping
SOT-523(Pb-Free)
3000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings @TA=25°C unless otherwise specified
Parameter
Reverse Voltage
Forward Current
Non-repetitive Peak Forward
Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction
to Ambient
Junction Temperature
Storage Temperature
Symbol
Limit
Unit
VR
IF
IFSM
85
75
V
mA
2.0
A
150
mW
°C/
W
°C
°C
PD
RΘJA
833
Tj
Tstg
150
-55~+150
Electrical Characteristics @TA=25°C unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V(BR)
IR1
IR2
VF
CD
Trr
Test conditions
IR=1μA
VR=75V
VR=25V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V,f=1MHz
IF= IR=10mA, Irr=0.1×IR,
RL=100Ω
Min
Max
Unit
85
-
2
0.03
715
855
1000
1250
1.5
4
V
μA
μA
mV
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pF
ns
Technical Data
Data Sheet N1727, Rev. -
BAW56T
BAV70T
BAV99T
Green Products
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Technical Data
Data Sheet N1727, Rev. -
BAW56T
BAV70T
BAV99T
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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