SANGDEST MICROELECTRONICS MBR0520WS Technical Data Data Sheet N1659 Rev. - Green Products MBR0520WS SCHOTTKY BARRIER RECTIFIER DIODE Features: • • • • • • • • Lead-less chip form Low Vf High current capability Low power loss/high efficiency UL 94V-0 class package material This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Data: • • • • Case: SOD-323, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.004 grams(approx) Mechanical Dimensions: In mm / Inches SOD-323(CJ) • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR0520WS Technical Data Data Sheet N1659 Rev. - Green Products Marking Diagram: Where X is Date Code S20 = Part Name Cautions：Molding resin Epoxy resin UL: 94V-0 Ordering Information: Device MBR0520WS Package Shipping SOD-323(Pb-Free) 3000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR0520WS Technical Data Data Sheet N1659 Rev. - Green Products Maximum Ratings and Electrical Characteristics Maximum Ratings: Characteristics Repetitive Peak Reverse Voltage Symbol Average Forward Current IF (AV) Peak One Cycle NonRepetitive Surge Current (Per leg) IFSM Condition - Max. Units 20 V 50% duty cycle @ TA=55°C, rectangular wave form 0.5 A 8.3ms, Half Sine pulse 10 A Max. 0.45 100 Units V μA 75 pF Specification -55 to +125 -55 to +150 120 Units °C °C °C/W VRRM Electrical Characteristics: Characteristics Forward Voltage Drop* Reverse Current* Junction Capacitance Symbol VF IR1 CJ Condition @ 0.5A, Pulse, TJ = 25°C @VR = rated VR TJ = 25°C @VR = 5V, TC = 25 °C fSIG = 1MHz B B B B B B * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Maximum Thermal Resistance Junction to Ambient Case Style Symbol TJ Tstg RθJA Condition DC operation SOD-323 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS MBR0520WS Technical Data Data Sheet N1659 Rev. - Green Products TJ=100℃ TJ=25℃ TJ=25℃ Fig.1-Typical Junction Capacitance Fig.2-Typical Reverse Characteristics TJ=100℃ TJ=25℃ Fig.3-Typical Forward Voltage Drop Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1659 Rev. - MBR0520WS Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •