SANGDEST MICROELECTRONICS HER208G Green Products Technical Data Data Sheet N1679, Rev. - HER208G HIGH EFFICIENCY RECTIFIERS Reverse Voltage - 1000 Volts Forward Current - 2.0 Amperes Features: • • • • • • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 High speed switching for high efficiency Low reverse leakage Glass Passivated Die Construction High forward surge current capability High temperature soldering guaranteed: 260℃/10 seconds, 0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension Mechanical Data: • • • • • Case: JEDEC DO-15 molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.014 ounce, 0.40 grams Mechanical Dimensions: In mm DO-15 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS HER208G Green Products Technical Data Data Sheet N1679, Rev. - MARKING DIAGRAM HER208G = Part Name Cautions：Molding resin Epoxy resin UL:94V-0 ORDERING INFORMATION Device HER208G Package DO-15 (Pb-Free) Shipping 3000pcs / tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS HER208G Green Products Technical Data Data Sheet N1679, Rev. - Maximum Ratings: Characteristics Repetitive Peak Reverse Voltage RMS Voltage DC Blocking Voltage Symbol Condition - VRRM - VRMS VDC Max. Units 1000 V 700 1000 V V Average Forward Current IF (AV) 50% duty cycle @TA = 50℃ rectangular wave form 2.0 A Peak One Cycle NonRepetitive Surge Current IFSM 8.3 ms, half Sine pulse 60 A Electrical Characteristics: Characteristics Forward Voltage Drop Reverse Current Junction Capacitance Symbol Condition Typ. Max. VF1 @ 2.0A, Pulse, TJ = 25℃ - 1.7 V IR1 @VR = rated VR TJ = 25℃ @VR = rated VR TJ = 100℃ @VR = 4V, TC = 25 °C fSIG = 1MHz IF=0.5A,IR=1.0A,Irr=0.25A - 5 μA - 100 μA 20 - pF - 70 ns IR2 CJ B B Maximum reverse recovery time Trr B B B Units B * Pulse width < 300 µs, duty cycle < 2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -65 to +150 ℃ Storage Temperature Tstg - -65 to +150 ℃ Maximum Thermal Resistance Junction to Ambient Case Style RθJA 50 ℃/W DC operation DO-15 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1679, Rev. - HER208G Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1679, Rev. - HER208G Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •