SANGDEST MICROELECTRONICS UA1A-UA1M Green Products Technical Data Data Sheet N1509, Rev. - UA1A-UA1M Ultrafast Avalanche Diodes Features: • • • • • • • • Ideally Suited for Automatic Assembly Low Forward Overload Drop, High Efficiency Low Power Loss Super-Fast Recovery Time Plastic Material has UL Classification 94V-O This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Data: • • • • • Case: Low Profile Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.11 grams(approx) UA1A Mechanical Dimensions: In mm(Inches) SMA/DO-214AC Dim. Min. Max. Min. Max. A 2.18 2.90 0.086 0.114 B 3.99 4.60 0.157 0.181 C 1.29 1.70 0.508 0.067 D 0.152 0.305 0.006 0.012 E 4.70 5.31 0.185 0.209 F 1.70 2.50 0.067 0.098 G 0.051 0.203 0.002 0.008 H 0.76 1.55 0.030 0.610 In mm In inches SMA MARKING, MOLDING RESIN st nd Marking for UA1A/B/C/D/E/G/J/K/M, 1 row UA1A/B/C/D/E/G/J/K/M, 2 row YYWWL Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS UA1A-UA1M Green Products Technical Data Data Sheet N1509, Rev. - Ordering Information: Device Package SMA (Pb-Free) UA1(A-M) Shipping 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%. Characteristic Symbol UA1A UA1B UA1D UA1G UA1J UA1K UA1M Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 Surge Peak Reverse Voltage VRSM 50 100 200 400 600 800 1000 Units V Max. Average Forward Current @TL =100°C IF 1.0 A Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Maximum Forward voltage @IF =1.0A VF Maximum Leakage Current @TA = 25°C IR Reverse Recovery Time (Note 1) Trr 1 1.25 1.7 3 50 V µA 75 ns Max. thermal resistance junction to ambient (Note 2) RΘJA 70 K/W Non-Repetitive Avalanche Energy(Note 3) EAS 20 mJ TJ,TSTG -55 to +150 Operating Junction and Storage Temperature Range Case Style °C SMA Note: 1. Measured with IF=0.5A, IR=1.0A, Irr=0.25A 2 2. Mounted on P.C. Board with 8.0mm lead area 3. TJ = 25°C, I AS=1.0mA, L=285mH • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1509, Rev. - UA1A-UA1M Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N1509, Rev. - UA1A-UA1M Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •