datasheet

SKM 145GB066D
Absolute Maximum Ratings
Symbol Conditions
IGBT
)
4 ,- .
$
4 +?- .
$;B
,-.! *
"22
+@-
%
A2 .
+-2
%
:22
%
C ,2
4 +-2 .
"
7
,- .
+-2
%
A2 .
+22
%
:22
%
AA2
%
,22
%
0 12 /// 3 +?-
.
0 12 /// 3 +,-
.
1222
9)
SEMITRANS® 2
Trench IGBT Modules
SKM 145GB066D
:"2 8 9 5 +- 8
) D "22 Inverse Diode
$E
4 +?- .
$E;B
$E;B,#$E
$E)B
+2 8 /
4 +?- .
Module
$;B)
4
Features
! " # $
Typical Applications*
% &
'()
*
Remarks
* +,-. #! / 012 ///
3+-2.! * / *
45+-2.
) *6 5"78 95+-8
4+-2.8 5:"2! ;9 <
= 0 *
*/
Units
,- .
$;B,#$
Values
%! + /
Characteristics
Symbol Conditions
IGBT
9
9 ! $ ,!1 %
$)
9 2 ! )
2
9 +- ,-.! *
min.
typ.
max.
Units
-
-!A
"!-
4 ,- .
2!2A
2!,-
%
4 ,- .
2!@
+
4 +-2 .
2!A-
2!@
4 ,-.
:!?
"
F
4 +-2.
-!?
A
F
+!1-
+!@
4 +-2.
/
+!?
,!+
+ BG
@!,2!"
E
E
2!,A
E
++22
$ +-2 %! 9 +- 4 ,-.
/
,-! 9 2 H9
9 0A///3+-
;9
4 .
*
*
;9 1!: F
;9 1!: F
;
40
$9L
:22
$ +-2%
4 +-2 .
9 0AK3+-
,
I
+-2
-,
[email protected]
1"
J
-!-
J
2!:
MKN
GB
1
06-10-2009 NOS
© by SEMIKRON
SKM 145GB066D
Characteristics
Symbol Conditions
Inverse Diode
E $E +-2 %8 9 2 min.
4 ,- .
/
typ.
max.
Units
+!1
+!"
4 +-2 .
/
SEMITRANS® 2
E2
4 ,- .
2!@-
+
E
4 ,- .
:
1
F
4 +-2 .
@2
,2
%
7
:!-
J
$;;B
H
$E +-2 %
*K* ,+22 %K7
9 0A 8 :22 ;
40&
**
2!-
MKN
Module
Trench IGBT Modules
O
;P3P
SKM 145GB066D
:2
/! 0
;
0
*
B
= B"
B
B-
,- .
2!?-
F
+,- .
+
F
2!2-
MKN
:
-
Q
,!-
-
Q
+-2
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
! " # $
Typical Applications*
% &
'()
*
Remarks
* * The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
+,-. #! / 012 ///
3+-2.! * / *
45+-2.
) *6 5"78 95+-8
4+-2.8 5:"2! ;9 <
= 0 *
*/
GB
2
06-10-2009 NOS
© by SEMIKRON
SKM 145GB066D
®
SEMITRANS 2
Trench IGBT Modules
SKM 145GB066D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
;
;
;
;
+
,
:
1
+
,
:
,,2
"2
+"!:!2!211?
2!2,,:
2!22+-
=KN
=KN
=KN
=KN
1
2!222,
;
;
;
;
+
,
:
1
+
,
:
::2
+:?
,A
2!22!2+,@
2!22,
=KN
=KN
=KN
=KN
1
2!222,
Zth(j-c)D
Features
! " # $
Typical Applications*
% &
'()
*
Remarks
* +,-. #! / 012 ///
3+-2.! * / *
45+-2.
) *6 5"78 95+-8
4+-2.8 5:"2! ;9 <
= 0 *
*/
GB
3
06-10-2009 NOS
© by SEMIKRON
SKM 145GB066D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 145GB066D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT and Diode
Fig. 10 CAL diode forward characteristic
Fig. 11Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL recovered charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 145GB066D
UL recognized, file no. E 63 532
& "+
9L
6
&"+
06-10-2009 NOS
© by SEMIKRON
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