89CNQ SERIES Technical Data Data Sheet N1135, Rev. - Green Products ULTRA LOW REVERSE LEAKAGE PLASTIC POWER SCHOTTKY RECTIFIER (135V-150V, 80A) Applications: ● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection Features: • • • • • • • • • • • 175℃ TJ operation Ultra low reverse leakage current Soft reverse recovery at low and high temperature Low forward voltage drop Low power loss, high efficiency High surge capacity Guard ring for enhanced ruggedness and long term reliability Guaranteed reverse avalanche characteristics This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request 89CNQ… Case Styles 89CNQ…SL 89CNQ…SM PRM2 PRM2-SL PRM2-SM Mechanical Dimensions: In Inches / mm PRM2 • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 89CNQ SERIES Technical Data Data Sheet N1135, Rev. - Green Products PRM2-SL PRM2-SM MARKING, MOLDING RESIN st nd Marking for 89CNQ135/SL/SM, 1 row SS YYWWL, 2 Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL: 94V-0 rd row 89CNQ135/SL/SM, 3 row 1 2 3 (pin) • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 89CNQ SERIES Technical Data Data Sheet N1135, Rev. - Green Products Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR Condition Max. Units - 135(89CNQ135) 150(89CNQ150) V Average Forward Current IF(AV) 50% duty cycle @TC =132°C, rectangular wave form 80 A Peak One Cycle Non-Repetitive Surge Current(per leg) IFSM 8.3 ms, half Sine pulse 708 A Condition @ 40A, Pulse, TJ = 25 °C @ 80A, Pulse, TJ = 25 °C @ 40A, Pulse, TJ = 125 °C @ 80A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG=50mV(p-p) Measured lead to lead 5 mm from package body - Max. 0.99 1.14 0.69 0.78 1.5 21 Units 1400 pF 5.5 nH 10,000 V/μs Specification -55 to +175 -55 to +175 Units °C °C Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Symbol VF1 VF2 Reverse Current (per leg) * Junction Capacitance (per leg) Typical Series Inductance (per leg) Voltage Rate of Change * IR1 IR2 CT LS dv/dt V V mA mA Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case(per leg) Typical Thermal Resistance Junction to Case (per package) Typical Thermal Resistance, case to Heat Sink Symbol TJ Tstg Condition - RθJC DC operation 0.85 °C/W RθJC DC operation 0.42 °C/W Rθcs Mounting surface, smooth and greased 0.30 °C/W Mounting Torque TM Approximate Weight Case Style wt 40(min) 58(max) 7.8 PRM2 PRM2-SL PRM2-SM - • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • Kg-cm g 89CNQ SERIES Technical Data Data Sheet N1135, Rev. - Green Products • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 89CNQ SERIES Technical Data Data Sheet N1135, Rev. - Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com •