89CNQ SERIES N1135 REV.-

89CNQ SERIES
Technical Data
Data Sheet N1135, Rev. -
Green Products
ULTRA LOW REVERSE LEAKAGE PLASTIC
POWER SCHOTTKY RECTIFIER
(135V-150V, 80A)
Applications:
● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
•
•
175℃ TJ operation
Ultra low reverse leakage current
Soft reverse recovery at low and high temperature
Low forward voltage drop
Low power loss, high efficiency
High surge capacity
Guard ring for enhanced ruggedness and long term reliability
Guaranteed reverse avalanche characteristics
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
89CNQ…
Case Styles
89CNQ…SL
89CNQ…SM
PRM2
PRM2-SL
PRM2-SM
Mechanical Dimensions: In Inches / mm
PRM2
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89CNQ SERIES
Technical Data
Data Sheet N1135, Rev. -
Green Products
PRM2-SL
PRM2-SM
MARKING, MOLDING RESIN
st
nd
Marking for 89CNQ135/SL/SM, 1 row SS YYWWL, 2
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL: 94V-0
rd
row 89CNQ135/SL/SM, 3 row 1 2 3 (pin)
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89CNQ SERIES
Technical Data
Data Sheet N1135, Rev. -
Green Products
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
Condition
Max.
Units
-
135(89CNQ135)
150(89CNQ150)
V
Average Forward Current
IF(AV)
50% duty cycle @TC =132°C,
rectangular wave form
80
A
Peak One Cycle Non-Repetitive
Surge Current(per leg)
IFSM
8.3 ms, half Sine pulse
708
A
Condition
@ 40A, Pulse, TJ = 25 °C
@ 80A, Pulse, TJ = 25 °C
@ 40A, Pulse, TJ = 125 °C
@ 80A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz, VSIG=50mV(p-p)
Measured lead to lead 5 mm
from package body
-
Max.
0.99
1.14
0.69
0.78
1.5
21
Units
1400
pF
5.5
nH
10,000
V/μs
Specification
-55 to +175
-55 to +175
Units
°C
°C
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Symbol
VF1
VF2
Reverse Current (per leg) *
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Voltage Rate of Change
*
IR1
IR2
CT
LS
dv/dt
V
V
mA
mA
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Case(per leg)
Typical Thermal Resistance
Junction to Case
(per package)
Typical Thermal Resistance,
case to Heat Sink
Symbol
TJ
Tstg
Condition
-
RθJC
DC operation
0.85
°C/W
RθJC
DC operation
0.42
°C/W
Rθcs
Mounting surface, smooth and
greased
0.30
°C/W
Mounting Torque
TM
Approximate Weight
Case Style
wt
40(min)
58(max)
7.8
PRM2 PRM2-SL PRM2-SM
-
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Kg-cm
g
89CNQ SERIES
Technical Data
Data Sheet N1135, Rev. -
Green Products
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89CNQ SERIES
Technical Data
Data Sheet N1135, Rev. -
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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