322

NTE322
Silicon NPN Transistor
RF Power Output
Description:
The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits.
Features:
D Output Power: 3.5W (Min) @ VCC = 13.6V
D Power Gain: 11.5dB (Min)
D High Collector Emitter Breakdown Voltage: V(BR)CES ≥ 65V
D DC Current Gain: Linear to 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Note 1. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CES IC = 150mA, VBE = 0, Note 2
65
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
3
–
–
V
mA
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
–
–
0.01
hFE
IC = 100mA, VCE = 10V, Note 3
10
–
–
Cob
VCB = 12V, IE = 0, f = 1MHz
–
–
40
pF
Common–Emitter Amplifier Power Gain
GPE
PO = 3.5W, VCC = 13.6V, f = 27MHz
11.5
–
–
dB
Output Power
PO
PIN = 250mW, VCC = 13.6V, f = 27MHz
3.5
–
–
W
PO = 3.5W, VCC = 13.6V, f = 27MHz,
Note 4
–
70
–
%
f = 27MHz, Note 5
–
85
–
%
ON Characteristics
DC Current Gain
Dynamic Characteristics
Output Capacitance
Functional Test
η
Collector Efficiency
Percentage Up–Modulation
Note 2. Pulsed thru a 25mH inductor
Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
RF PO
100
Note 4. η =
(VCC) (IC)
Note 5. Percentage Up–Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with
VCC = 13.6V and noting the power input. Then the peak envelope power (PEP) is noted after
doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the VCC to 25V (to simulate the modulating voltage). Percentage Up–Modulation is then determined by the relation:
PEP
1/2
–1 100
Percentage Up–Modulation =
PC
27MHz Test Circuit
VCC
13.6V
C5
C6
RFC2
L2
INPUT
C1
C4
OUTPUT
L1
C3
C2
RFC1
C1, C2
9.0 – 180pF ARCO 463 or Equivalent
C3, C4
5.0 – 80pF ARCO 462 or Equivalent
C5
0.02µF Ceramic Disc
C6
0.1µF Ceramic Disc
RFC1
4 Turns #30 Enameled Wire Wound on
Ferroxcube Bead Type 56–590–65/3B
RFC2
26 Turns #22 Enameled Wire (2 Layers –
13 Turns Each Layer) 1/4” Inner Diameter
L1
0.22µH Molded Choke
L2
0.68µH Molded Choke
.380 (9.65) Max
.050 (1.27)
.160
(4.06)
.280 (7.25) Max
.128 (3.28) Dia
.100 (2.54)
.218
(5.55)
E B C
.995
(25.3)
.475
(12.0)
Min
.100 (2.54)
.200 (5.08)
Collector Connected to Tab
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