2310

NTE2310
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for
use in high voltage, fast switching industrial applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak (tp ≤ 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (tp ≤ 2ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W
Electrical Charactertistics: (TC = +25°C unless otherwise specified)
Parameter
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
400
–
–
V
VCE = 1000V, VBE = 0
–
–
1
mA
VCE = 1000V, VBE = 0, TC = +125°C
–
–
3
mA
VEB = 9V, IC = 0
–
–
10
mA
VCEO(sus) IC = 100mA, L = 25mH, Note 1
ICES
IEBO
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 6A, IB = 1.2A, Note 1
–
–
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 6A, IB = 1.2A, Note 1
–
–
1.5
V
IC = 6A, IB1 = 1.2A, IB2 = 1.2A
–
–
1
µs
Turn–On Time
ton
Storage Time
ts
–
–
4
µs
Fall Time
tf
–
–
0.8
µs
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
.060 (1.52)
.600
(15.24)
.173 (4.4)
C
.156 (3.96)
Dia.
B
C
.550
(13.97)
.430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners
Similar pages
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