HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs March 1997 Features Packages • 10A, 400V and 500V HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA • VCE(ON) 2.5V Max. • TFALL ≤1.4µs EMITTER COLLECTOR GATE • Low On-State Voltage • Fast Switching Speeds COLLECTOR (FLANGE) • High Input Impedance Applications HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA • Power Supplies • Motor Drives COLLECTOR (FLANGE) • Protective Circuits GATE Description EMITTER The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. Terminal Diagram N-CHANNEL ENHANCEMENT MODE PACKAGING AVAILABILITY PART NUMBER PACKAGE C BRAND HGTD10N40F1 TO-251AA G10N40 HGTD10N50F1 TO-251AA G10N50 HGTD10N40F1S TO-252AA G10N40 HGTD10N50F1S TO-252AA G10N50 G E NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., HGTD10N40F19A. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG HGTD10N40F1 HGTD10N40F1S 400 400 ±20 12 10 75 0.6 -55 to +150 HGTD10N50F1 HGTD10N50F1S 500 500 ±20 12 10 75 0.6 -55 to +150 UNITS V V V A A W W/oC oC INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-1 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2425.4 Specifications HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S , Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTD10N40F1 HGTD10N40F1S PARAMETERS SYMBOL TEST CONDITIONS HGTD10N50F1 HGTD10N50F1S MIN MAX MIN MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 400 - 500 - V Gate Threshold Voltage VGE(TH) VGE = VCE, IC = 1mA 2.0 4.5 2.0 4.5 V - 250 - - µA Zero Gate Voltage Collector Current ICES Gate-Emitter Leakage Current IGES Collector-Emitter On-Voltage VCE(ON) Gate-Emitter Plateau Voltage TJ = +150oC, VCE = 400V TJ = +150oC, VCE = 500V VGE = ±20V, VCE = 0V - - - 250 µA - 100 - 100 nA TJ = +150oC, IC = 5A, VGE = 10V - 2.5 - 2.5 V TJ = +150oC, IC = 5A, VGE = 15V - 2.2 - 2.2 V TJ = +25oC, IC = 5A, VGE = 10V - 2.5 - 2.5 V TJ = +25oC, IC = 5A, VGE = 15V - 2.2 - 2.2 V VGEP IC = 5A, VCE = 10V 5.3 (Typ) V On-State Gate Charge QG(ON) IC = 5A, VCE = 10V 13.4 (Typ) nC Turn-On Delay Time tD(ON) Resistive Load, IC = 5A, VCE = 400V, RL = 80Ω, TJ = +150oC, VGE = 10V, RG = 25Ω 45 (Typ) ns 35 (Typ) ns 130 (Typ) ns tFI 1400 (Typ) ns Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF 0.64 (Typ) mJ Turn-Off Delay Time tD(OFF) Rise Time tRI Turn-Off Delay Time tD(OFF) Fall Time Fall Time tFI Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) WOFF Thermal Resistance Junction-toCase (IGBT) RθJC Inductive Load (See Figure 11), IC = 5A, VCE(CLP) = 400V, RL = 80Ω, L = 50µH, TJ = +150oC, VGE = 10V, RG = 25Ω - 375 - 375 ns - 1200 - 1200 ns - 1.2 - 1.2 mJ - 1.67 - 1.67 oC/W Typical Performance Curves 10 8 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE TEST, VCE = 10V PULSE DURATION = 250µs DUTY CYCLE < 2% TC = -55oC o TC = +25 C 6 TC = +150oC 4 2 VGE = 15V 10 12 8 VGE = 6.0V VGE = 10V PULSE DURATION = 250µs DUTY CYCLE < 0.5% TC = +25oC 6 VGE = 5.5V VGE = 5.0V 4 VGE = 4.5V 2 VGE = 4.0V 0 0 0 2 4 6 8 0 10 2 4 6 8 VGE, GATE-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS 3-2 10 HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S Typical Performance Curves (Continued) 18 TJ = +150oC 3 ICE, DC COLLECTOR CURRENT (A) VCE(ON), SATURATION VOLTAGE (V) 4 VGE = 10V 2 VGE = 15V 1 16 VGE = 15V 14 12 10 VGE = 10V 8 6 4 2 0 0 1 10 +25 100 0.5 +150 TJ +150oC, VCE = 400V f = 1MHz tD(OFF)I , TURN-OFF DELAY (µs) L = 50µH 800 C, CAPACITANCE (pF) +125 FIGURE 4. DC COLLECTOR CURRENT vs CASE TEMPERATURE 1000 600 CISS 400 200 COSS CRSS 0.4 0.3 VGE = 15V, RG = 50Ω 0.2 VGE = 10V, RG = 50Ω VGE = 15V, RG = 25Ω VGE = 10V, RG = 25Ω 0.1 0.0 5 10 15 20 25 1 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10 ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE (TYPICAL) FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 2 WOFF , TURN-OFF SWITCHING LOSS (mJ) 10 TJ = +150oC, VGE = 10V RG = 25Ω, L = 50µH tFI , FALL TIME (µs) +100 TC , CASE TEMPERATURE ( C) FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL) 0 +75 o ICE, COLLECTOR-EMITTER CURRENT (A) 0 +50 1 VCE = 400V 0 TJ = +150oC, VGE = 10V RG = 25Ω, L = 50µH VCE = 400V 1.0 VCE = 200V 0.1 1 10 100 1 10 100 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL) 3-3 HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S 500 TJ = +150oC, TC = +100oC, VGE = 10V RG = 25Ω, PT = 75W, L = 50µH VCE = 200V 100 fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF VCE = 400V 10 1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION 375 RL = 100Ω IG(REF) = 0.33mA GATEEMITTER VOLTAGE VCC = BVCES VGE = 10V VCC = BVCES 250 5 125 0.75 BVCES 0.75 BVCES 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES COLLECTOR-EMITTER VOLTAGE 0 0 100 IG(REF) 20 PC = CONDUCTION DISSIPATION FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL) 10 VGE, GATE-EMITTER VOLTAGE (V) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) fOP , MAXIMUM OPERATING FREQUENCY (KHz) Typical Performance Curves (Continued) IG(REF) TIME (µs) IG(ACT) 80 IG(ACT) FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT Test Circuit RL L = 50µH 1/RG = 1/RGEN + 1/RGE VCC 400V RGEN = 50Ω + - 20V 0V RGE = 50Ω FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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