INTERSIL HGTP20N60C3

HGTG20N60C3, HGTP20N60C3,
HGT1S20N60C3S
Data Sheet
January 2000
45A, 600V, UFS Series N-Channel IGBT
Features
This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
• 45A, 600V, TC = 25oC
File Number
4492.2
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
Formerly developmental type TA49178.
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
E
C
PACKAGE
G
BRAND
HGTG20N60C3
TO-247
G20N60C3
HGTP20N60C3
TO-220AB
G20N60C3
HGT1S20N60C3S
TO-263AB
G20N60C3
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.
JEDEC TO-220AB (ALTERNATE VERSION)
Symbol
E
C
G
C
G
COLLECTOR
(FLANGE)
E
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
ALL TYPES
UNITS
600
V
45
20
300
±20
±30
20A at 600V
164
1.32
100
-55 to 150
A
A
A
V
V
W
W/oC
mJ
oC
300
260
4
oC
oC
10
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
PARAMETER
SYMBOL
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
ICES
VCE(SAT)
VGE(TH)
TEST CONDITIONS
VCE = BVCES
IC = IC110
VGE = 15V
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG =
10Ω, VGE = 15V,
L = 100µH
VGEP
28
-
V
-
-
250
µA
TC = 150oC
-
-
5.0
mA
TC = 25oC
-
1.4
1.8
V
TC = 150oC
IC = 250µA, VCE = VGE
Gate to Emitter Leakage Current
Gate to Emitter Plateau Voltage
15
TC = 25oC
-
1.5
1.9
V
3.4
4.8
6.3
V
-
-
±250
nA
VCE = 480V
120
-
-
A
VCE = 600V
20
-
-
A
ICE = IC110, VCE = 0.5 BVCES
-
8.4
-
V
On-State Gate Charge
QG(ON)
ICE = IC110
VCE = 0.5 BVCES
VGE = 15V
-
91
110
nC
VGE = 20V
-
122
145
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Test Circuit (Figure 17)
-
28
32
ns
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
24
28
ns
-
151
210
ns
-
55
98
ns
-
295
320
µJ
EON2
-
500
550
µJ
EOFF
-
500
700
µJ
Turn-On Energy (Note 4)
EON1
Turn-On Energy (Note 4)
Turn-Off Energy (Note 3)
2
-
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
28
32
ns
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Test Circuit (Figure 17)
-
24
28
ns
-
280
450
ns
-
108
210
ns
-
380
410
µJ
mJ
Turn-On Energy (Note 4)
EON1
Turn-On Energy (Note 4)
EON2
-
1.0
1.1
Turn-Off Energy (Note 3)
EOFF
-
1.2
1.7
mJ
0.76
oC/W
Thermal Resistance Junction To Case
RθJC
-
-
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17.
Unless Otherwise Specified
VGE = 15V
40
30
20
10
0
25
50
75
100
125
150
140
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH
120
100
80
60
40
20
0
0
TC , CASE TEMPERATURE (oC)
VGE
15V
10V
15V
10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.76oC/W, SEE NOTES
1
2
10
5
20
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
3
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX , OPERATING FREQUENCY (kHz)
75oC
75oC
110oC
110oC
300
400
500
600
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 10Ω,
L = 1mH, V CE = 480V
TC
200
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
100
100
14
450
VCE = 360V, RG = 10Ω, TJ = 125oC
12
400
ISC
10
350
8
300
6
250
4
200
tSC
2
150
10
11
12
13
14
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ISC , PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
50
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Unless Otherwise Specified (Continued)
100
80
TC = -55oC
60
TC = 25oC
TC = 150oC
40
20
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
0
0
2
6
4
10
8
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
300
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
250
TC = 25oC
200
150
TC = -55oC
TC = 150oC
100
50
0
0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON2 , TURN-ON ENERGY LOSS (mJ)
3.5
TJ = 25oC, TJ = 150oC, VGE = 10V
2.5
2.0
1.5
1.0
0.5
TJ = 25oC, TJ = 150oC, VGE = 15V
10
15
20
25
30
35
RG = 10Ω, L = 1mH, VCE = 480V
2.5
2.0
TJ = 150oC; VGE = 10V OR 15V
1.5
1.0
0.5
0
40
TJ = 25oC; VGE = 10V OR 15V
5
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
50
RG = 10Ω, L = 1mH, VCE = 480V
RG = 10Ω, L = 1mH, VCE = 480V
175
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
30
25
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
6
3.0
RG = 10Ω, L = 1mH, VCE = 480V
5
5
4
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
4.0
0
3
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3.0
2
1
150
TJ = 25oC, TJ = 150oC, VGE = 10V
125
100
75
50
25
TJ = 25oC, TJ = 150oC, VGE = 15V
TJ = 25oC AND TJ = 150oC, VGE = 15V
0
20
5
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4
40
5
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
40
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Typical Performance Curves
Unless Otherwise Specified (Continued)
120
RG = 10Ω, L = 1mH, VCE = 480V
RG = 10Ω, L = 1mH, VCE = 480V
275
110
250
100
225
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
300
TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
TJ = 150oC, VGE = 10V OR VGE = 15V
90
80
70
150
60
125
50
40
100
5
10
15
20
25
30
35
40
TJ = 25oC, VGE = 10V OR 15V
5
10
16
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
TC = -55oC
TC = 150oC
150
100
TC = 25oC
50
0
5
6
7
8
9
10
11
12
13
14
10
VCE = 600V
8
VCE = 200V
6
VCE = 400V
4
2
0
10
20
30
40
50
60
70
80
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
FREQUENCY = 1MHz
CIES
3
2
COES
1
CRES
0
5
40
IG (REF) = 1mA, RL = 15Ω, TC = 25oC
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
5
35
12
0
15
FIGURE 13. TRANSFER CHARACTERISTIC
0
30
14
VGE , GATE TO EMITTER VOLTAGE (V)
4
25
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
300
C, CAPACITANCE (nF)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
250
15
90
100
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
100
Unless Otherwise Specified (Continued)
0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
t1
SINGLE PULSE
10-3 -5
10
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-3
10-2
10-1
t2
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP3060
90%
10%
VGE
EON2
EOFF
L = 1mH
VCE
RG = 10Ω
90%
+
-
ICE
VDD = 480V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
6
FIGURE 18. SWITCHING TEST WAVEFORMS
HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 18. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in
the calculation for EOFF; i.e., the collector current equals
zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.