TSUS6202 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • 94 8390 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Peak wavelength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 15° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS TSUS6202 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. • Emitter in transmissive sensors • Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 30 ± 15 950 800 TSUS6202 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSUS6202 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.0, 29-Sep-15 TEST CONDITION tp/T = 0.5, tp = 100 μs tp = 100 μs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 150 300 2.5 170 100 -40 to +85 -40 to +100 260 230 V mA mA A mW °C °C °C °C K/W Document Number: 84333 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS6202 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 60 RthJA = 230 K/W 40 20 20 0 0 0 10 21313 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21314 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF - 1.3 1.7 V IF = 1.5 A, tp = 100 μs VF - 2.2 2.7 V IF = 100 mA TKVF - -1.3 - mV/K VR = 5 V IR - - 100 μA VR = 0 V, f = 1 MHz, E = 0 Cj - 30 - pF IF = 100 mA, tp = 20 ms Ie 20 30 70 mW/sr mW/sr IF = 1.5 A, tp = 100 μs Ie 170 280 - IF = 100 mA, tp = 20 ms φe - 15 - mW IF = 20 mA TKφe - -0.8 - %/K ϕ - ± 15 - deg nm Angle of half intensity Peak wavelength IF = 100 mA λp - 950 - Spectral bandwidth IF = 100 mA Δλ - 50 - nm Temperature coefficient of λp IF = 100 mA TKλp - 0.2 - nm/K IF = 100 mA tr - 800 - ns IF = 1.5 A tr - 400 - ns IF = 100 mA tf - 800 - ns IF = 1.5 A tf - 400 - ns d - 3.8 - mm Rise time Fall time Virtual source diameter Rev. 1.0, 29-Sep-15 Document Number: 84333 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS6202 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 I e - Radiant Intensity (mW/sr) I F - Forward Current (A) 10 1 I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 10 -2 94 7989 10 0 10 2 10 4 1000 Φ - Radiant Power (mW) e I F - Forward Current (mA) 10 3 10 1 10 2 I F - Forward Current (mA) Fig. 6 - Radiant Intensity vs. Forward Current 10 4 10 3 10 2 10 1 10 0 100 10 1 0.1 0 1 2 3 4 10 0 10 3 10 1 10 2 I F - Forward Current (mA) V F - Forward Voltage (V) 94 7996 Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA Ie rel; Φe rel VF rel - Relative Forward Voltage (V) 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 -1 100 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Rev. 1.0, 29-Sep-15 0 -10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 84333 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSUS6202 www.vishay.com Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1000 950 0.6 λ - Wavelength (nm) 94 7994 10° 0.4 0.2 0 0.2 0.4 0.6 94 7995 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 (4.7) 7.7 ± 0.15 35.5 ± 0.55 8.7 ± 0.3 5.8 ± 0.15 A Area not plane 5 ± 0.15 1 min. + 0.2 0.6 - 0.1 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5259.02-4 Issue: 8; 19.05.09 95 10917 Rev. 1.0, 29-Sep-15 Document Number: 84333 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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