TSUS5200, TSUS5201, TSUS5202 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 15° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. in APPLICATIONS • Infrared remote control and free air transmission systems with low forward voltage and small package requirements • Emitter in transmissive sensors • Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) TSUS5200 20 TSUS5201 25 TSUS5202 30 Note Test conditions see table “Basic Characteristics” ϕ (deg) λP (nm) tr (ns) ± 15 ± 15 ± 15 950 950 950 800 800 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk Bulk Bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ T-1¾ T-1¾ TSUS5200 TSUS5201 TSUS5202 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81055 Rev. 2.2, 29-Jun-09 tp/T = 0.5, tp = 100 µs tp = 100 µs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 150 300 2.5 170 100 - 40 to + 85 - 40 to + 100 260 230 V mA mA A mW °C °C °C °C K/W For technical questions, contact: [email protected] www.vishay.com 1 TSUS5200, TSUS5201, TSUS5202 Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 60 RthJA = 230 K/W 40 20 20 0 0 0 10 21313 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21314 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage Temperature coefficient of VF Reverse current SYMBOL MIN. TYP. MAX. 1.7 IF = 100 mA, tp = 20 ms VF 1.3 IF = 100 mA TKVF - 1.3 UNIT V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF IF = 20 mA TKφe - 0.8 %/K ϕ ± 15 deg Peak wavelength IF = 100 mA λp 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Junction capacitance Temperature coefficient of φe Angle of half intensity Temperature coefficient of λp Rise time Fall time Virtual source diameter 100 µA IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns d 3.8 mm Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81055 Rev. 2.2, 29-Jun-09 TSUS5200, TSUS5201, TSUS5202 Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors TYPE DEDICATED CHARACTERISTICS PARAMETER Forward voltage TEST CONDITION PART TSUS5200 IF = 1.5 A, tp = 100 µs TSUS5201 TSUS5202 VF TSUS5200 Ie TSUS5201 TSUS5202 IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 µs Radiant power IF = 100 mA, tp = 20 ms SYMBOL MIN. TYP. MAX. UNIT VF 2.2 3.4 V VF 2.2 3.4 V 2.2 2.7 V 10 20 50 mW/sr Ie 15 25 50 mW/sr Ie 20 30 50 TSUS5200 Ie 95 180 mW/sr TSUS5201 Ie 120 230 mW/sr 170 mW/sr TSUS5202 Ie 280 mW/sr TSUS5200 φe 13 mW TSUS5201 φe 14 mW TSUS5202 φe 15 mW Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.2 VF rel - Relative Forward Voltage (V) I F - Forward Current (A) 10 1 I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 10 -2 94 7989 0.9 0.8 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 7990 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 1000 I e - Radiant Intensity (mW/sr) I F - Forward Current (mA) 1.0 10 2 10 4 10 3 10 2 10 1 10 0 94 7996 IF = 10 mA 0.7 10 -1 10 0 10 1 t p - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 -1 1.1 0 1 2 3 Fig. 4 - Forward Current vs. Forward Voltage Document Number: 81055 Rev. 2.2, 29-Jun-09 TSUS5200 10 TSUS 5201 1 4 V F - Forward Voltage (V) TSUS 5202 100 10 0 94 7991 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 6 - Radiant Intensity vs. Forward Current For technical questions, contact: [email protected] www.vishay.com 3 TSUS5200, TSUS5201, TSUS5202 Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors 1.25 TSUS 5202 Φe rel - Relative Radiant Power Φ - Radiant Power (mW) e 1000 100 TSUS5200 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7992 0 900 10 4 Fig. 7 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 1.6 I e rel - Relative Radiant Intensity 0° Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 - 10 0 10 50 140 100 0.6 T amb - Ambient Temperature (°C) 94 7993 1000 950 λ - Wavelength (nm) 94 7994 0.4 0.2 0 0.2 0.4 0.6 94 7995 Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 (4.7) 7.7 ± 0.15 8.7 ± 0.3 35.5 ± 0.55 12.5 ± 0.3 Ø 5.8 ± 0.15 A Area not plane 1.1 ± 0.25 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.02-4 Issue: 6; 19.05.09 95 10916 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81055 Rev. 2.2, 29-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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