TSAL6102 Datasheet

TSAL6102
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:  = ± 10°
• Low forward voltage
94 8389
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
APPLICATIONS
TSAL6102 is an infrared, 940 nm emitting diode in GaAlAs
multi quantum well (MQW) technology with high radiant
power and high speed molded in a blue-gray plastic
package.
• Infrared remote
requirements
control
units
with
high
power
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
220
± 10
940
15
TSAL6102
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSAL6102
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1.5
A
Power dissipation
PV
160
mW
Junction temperature
Tj
100
°C
Tamb
-40 to +85
°C
°C
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.0, 27-Aug-15
Tstg
-40 to +100
t  5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm soldered on PCB
RthJA
230
K/W
Document Number: 84337
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSAL6102
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 230 K/W
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
20 30
40
50
60
70 80
90
100
0
10
21212
Tamb - Ambient Temperature (°C)
21211
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Forward voltage
Radiant power
TYP.
MAX.
UNIT
V
VF
1.35
1.6
IF = 1 A, tp = 100 μs
VF
2.2
3
IF = 1 mA
TKVF
-1.8
Reverse current
Radiant intensity
MIN.
IF = 100 mA, tp = 20 ms
Temperature coefficient of VF
Junction capacitance
SYMBOL
V
mV/K
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
IF = 100 mA, tp = 20 ms
Ie
150
220
1100
1650
mW/sr
40
mW
10
μA
300
mW/sr
40
pF
IF = 1 A, tp = 100 μs
Ie
IF = 100 mA, tp = 20 ms
e
IF = 20 mA
TKe
-0.6
%/K

± 10
deg
nm
Temperature coefficient of e
Angle of half intensity
Peak wavelength
IF = 100 mA
p
940
Spectral bandwidth
IF = 100 mA

30
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.2
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
IF - Forward Current (mA)
I F - Forward Current (A)
10 1
IFSM = 1 A (Single Pulse)
t p/T = 0.01
0.05
10 0
0.1
0.5
1.0
10 -1
-2
10
96 11987
10
tp = 100 µs
tp/T= 0.001
1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
0
10 2
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Rev. 1.0, 27-Aug-15
100
21534
1
2
3
VF - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
Document Number: 84337
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSAL6102
www.vishay.com
Vishay Semiconductors
10000
100
Φe rel - Relative Radiant Power (%)
1000
100
10
1
90
80
60
50
40
30
20
10
0.1
1
10
100
0
840
1000
IF - Forward Current (mA)
IF = 30 mA
70
880
Fig. 5 - Radiant Intensity vs. Forward Current
920
960
0°
10°
20°
30°
Ie rel - Relative Radiant Intensity
tp = 100 μs
Phie - Radiant Power (mW)
1040
Fig. 8 - Relative Radiant Power vs. Wavelength
1000
100
10
1
0.1
1
1000
λ - Wavelength (nm)
21445
10
100
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ie - Radiant Intensity (mW/sr)
tp = 100 μs
80°
1000
0.6
IF - Forward Current (mA)
0.4
0.2
0
15989
Fig. 6 - Radiant Power vs. Forward Current
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement


1.6
Ie rel; Φe rel
1.2
IF = 20 mA
0.8
0.4
0
-10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature
Rev. 1.0, 27-Aug-15
Document Number: 84337
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSAL6102
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Ø 5.8 ± 0.15
C
R2.49 (sphere)
(4.4)
35.2 ± 0.55
< 0.7
8.7 ± 0.3
7.7 ± 0.15
A
Area not plane
Ø 5 ± 0.15
1 min.
+ 0.2
0.6 - 0.1
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5259.08-4
Issue: 3; 19.05.09
14436
Rev. 1.0, 27-Aug-15
Document Number: 84337
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000