BUZ32 Semiconductor Data Sheet 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2416.1 Features • 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as • SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, • Nanosecond Switching Speeds (9.5A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 200V, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 0.400 • High Input Impedance Ohm, N- Formerly developmental type TA17412. • Majority Carrier Device Channel • Related Literature Power Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ32 TO-220AB BUZ32 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, TOSOURCE DRAIN 220AB) GATE /Creator DRAIN (FLANGE) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ32 TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg BUZ32 200 200 9.5 38 ±20 75 150 0.6 -55 to 150 E 55/150/56 UNITS V V A A V W mJ W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 200 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current TJ = 25oC, VDS = 200V, VGS = 0V TJ = 125oC, VDS = 200V, VGS = 0V - 20 250 µA - 100 1000 µA VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 4.5A, VGS = 10V (Figure 8) - 0.35 0.4 Ω gfs VDS = 25V, ID = 4.5A (Figure 11) 2.2 5.0 - S - 30 45 ns - 40 60 ns - 110 140 ns IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time VCC = 30V, ID ≈ 2.9A, VGS = 10V, RGS = 50Ω, RL = 10Ω. (Figures 16, 17) td(OFF) Fall Time tf - 60 80 ns - 1500 2000 pF COSS - 250 400 pF CRSS - 70 120 Input Capacitance CISS Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) pF Thermal Resistance Junction to Case RθJC ≤ 1.67 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulsed Source to Drain Current ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TEST CONDITIONS TC = 25oC TC = 25oC TJ = 25oC, ISD = 19A, VGS = 0V TJ = 25oC, ISD = 9.5A, dISD/dt = 100A/µs, VR = 100V MIN TYP MAX - - 9.5 A - - 38 A - 1.3 1.7 V - 400 - ns - 6.0 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 20V, starting TJ = 25oC, L = 3.3µH, RG = 50Ω, IPEAK = 9A. (See Figures 14 and 15). 2 UNITS BUZ32 Unless Otherwise Specified 1.2 12 1.0 10 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 VGS ≥ 10V 8 6 4 2 .0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 0 150 ZθJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.01 0 0.01 10-5 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 20 PD = 75W 8.0V 10V 20V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.5µs 10µs 101 100µs OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100 TC = 25oC TJ = MAX RATED 10-1 100 1ms 10ms 100ms DC 15 7.5V VGS = 7.0V VGS = 6.5V VGS = 6.0V 10 VGS = 5.5V VGS = 5.0V 5 VGS = 4.5V VGS = 4.0V 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 0 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 30 BUZ32 20 Unless Otherwise Specified (Continued) 1.5 PULSE DURATION = 80µs VDS = 25V TJ = 25oC PULSE DURATION = 80µs rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 10 VGS = 5V 6V 6.5V 1.0 7V 7.5V 0.5 8V 9V 10V 20V 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0 10 FIGURE 6. TRANSFER CHARACTERISTICS VGS(TH), GATE THRESHOLD VOLTAGE (V) rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) PULSE DURATION = 80µs VGS = 10V, ID = 4.5A 0.6 0.3 0 -40 0 40 80 120 160 VDS = VGS ID = 1mA 3 2 1 0 -50 8 gfs, TRANSCONDUCTANCE (S) CISS COSS 10-1 10-2 0 CRSS 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE PULSE DURATION = 80µs VDS = 25V VGS = 0, f = 1MHz VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 20 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 100 10 ID, DRAIN CURRENT (A) 4 TJ , JUNCTION TEMPERATURE (oC) 101 0 FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 0.9 C, CAPACITANCE (nF) 5.5V 6 TJ = 25oC 4 2 0 0 10 ID, DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 20 BUZ32 102 Unless Otherwise Specified (Continued) 15 PULSE DURATION = 80µs 101 TJ = 150oC TJ = 25oC 100 10-1 0 ID = 14.3A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) Typical Performance Curves 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 10 VDS = 40V VDS = 160V 5 0 3.0 0 20 10 30 40 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS IAS + RG VDS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 16. SWITCHING TIME TEST CIRCUIT 5 10% 50% 50% PULSE WIDTH FIGURE 17. RESISTIVE SWITCHING WAVEFORMS BUZ32 Test Circuits and Waveforms (Continued) VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 0.2µF VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT 6 Ig(REF) 0 FIGURE 19. GATE CHARGE WAVEFORMS