Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2301Z
Power MOSFET
-2.8A, -20V P-CHANNEL
ENHANCEMENT MODE POWER
MOSFET

DESCRIPTION
The UTC UT2301Z is a P-channel enhancement mode power
MOSFET with fast switching speed, low on-resistance and favorable
stabilization. It can be used in commercial and industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.

FEATURES
* Very High Density Cell Design for Low On-Resistance
* Very Good Thermal and Electrical Capabilities
SYMBOL


ORDERING INFORMATION
Ordering Number
Note:

UT2301ZG-AE3-R
Pin Assignment: S: Source G: Gate
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
D: Drain
MARKING
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UT2301Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
-2.8
A
Pulsed Drain Current (Note 2, 3)
IDM
-10
A
Total Power Dissipation (Note 4)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Pulse width ≤300µs, duty cycle ≤2 %
4. Surface mounted on 1 in 2 copper pad of FR4 board.

THERMAL DATA (Note)
PARAMETER
Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 5%sec

SYMBOL
θJA
RATING
100
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (ID=-2.3A , TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=-16V, VGS=0V
VGS=±8V, VDS=0V
-20
VGS(TH)
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2.0A
VDS=-5 V, VGS=-10V
VDS=-5 V, ID=-2.8A
-0.45
RDS(ON)
On-State Drain Current
ID(ON)
Forward Tran conductance
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-6V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note)
QG
VDS=-6V, VGS=-4.5V,
Gate-Source Charge
QGS
ID=-2.8A
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note)
tD(ON)
VDD=-6V, VGEN=-4.5V,
Turn-ON Rise Time
tR
ID=-1A, RG=6Ω, RL=6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note)
VSD
IS=-1.6 A, VGS=0 V
Maximum Diode Forward Current
IS
Notes: Pulse width ≤300µs, Duty Cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNITS
-1.0
±5
V
μA
μA
6.5
V
mΩ
mΩ
A
S
447
127
80
pF
pF
pF
95
122
130
190
-6
5.4
0.8
1.1
5
19
95
65
-0.8
10
25
60
110
80
nC
nC
nC
ns
ns
ns
ns
-1.2
-1.6
V
A
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UT2301Z

Power MOSFET
SWITCHING TEST CIRCUIT
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UT2301Z

Power MOSFET
TYPITAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
250
200
200
150
150
100
100
50
50
0
0
0
10
15
20
25
30
5
Drain-Source Breakdown Voltage, BVDSS(V)
0
Drain-Source On-State Resistance
Characteristics
4.0
Drain Current vs. Source to Drain Voltage
1.2
3.5
1.0
3.0
ID=-2.8A
VGS=-4.5V
2.5
2.0
1.5
ID=-2.0A
VGS=-2.5V
1.0
Drain Current, ID (A)
Drain Current, ID (A)
0.2
0.4
0.6
0.8
1.0
Gate Threshold Voltage, VTH (V)
0.8
0.6
0.4
0.2
0.5
0
0
0
50
100
150
200
Drain to Source Voltage, VDS (mV)
0
0.6
0.2
0.4
0.8
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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