Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT2311
Power MOSFET
-4A, -20V P-CHANNEL
ENHANCEMENT MODE
MOSFET

FEATURES
* Extremely low on-resistance due to high density cell
* Perfect thermal performance and electrical capability with
advanced technology of trench process

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT2311G-AE3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UT2311

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
-4
A
Pulsed Drain Current
IDM
-20
A
Power Dissipation (TA=25°C) (Note 2)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in 2 copper pad of FR4 board.

THERMAL DATA
PARAMETER
Junction to Ambient (PCB mounted)
Note: Surface Mounted on FR4 board t ≤ 5 sec.

SYMBOL
θJA
RATINGS
100
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0V, ID =-250µA
VDS =-16V,VGS =0V
VGS =±8V, VDS =0V
VGS(TH)
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-4.0 A
VGS =-2.5V, ID =-2.5 A
VDS ≥ -10V, VGS =-4.5V
RDS(ON)
On-State Drain Current
ID(ON)
DYNAMIC PARAMETERSb
Input Capacitance
CISS
Output Capacitance
COSS VDS =-6V, VGS =0 V, f =1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERSb
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD =-4V, VGEN =-4.5V, ID =-1A
Turn-OFF Delay Time
tD(OFF) RL =4Ω, RG =6Ω
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VGS =-4.5V, VDS =-6V, ID =-4.0A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS =0 V, IS =-1.6A,
Maximum Continuous Drain-Source
IS
Diode Forward Current
Note: Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
-20
-1.0
±100
-0.45
45
75
55
85
-6
V
µA
nA
V
mΩ
mΩ
A
970
485
160
pF
pF
pF
18
45
95
65
8.5
1.5
2.1
ns
ns
ns
ns
nC
nC
nC
-0.8
12
-1.2
V
-1.6
A
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Gate Threshold Voltage
300
300
250
250
Drain Current, -ID (µA)
Drain Current, -ID (µA)
Drain Current vs. Drain-Source
Breakdown Voltage
200
150
100
50
0
200
150
100
50
0
5
10
15
20
25
30
0
35
0.1
0.2
0.3
0.4
0.5
0.6
Gate Threshold Voltage, -VTH (V)
Drain-Source Breakdown Voltage, -BVDSS (V)
Drain Current, -ID (A)
Drain Current, -ID (A)
0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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