SKiiP 34NAB12T4V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Inverter - IGBT
MiniSKiiP® 3
VCES
Tj = 25 °C
1200
V
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
52
A
43
A
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
58
A
ICnom
ICRM
VGES
tpsc
SKiiP 34NAB12T4V1
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
Tj
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
A
A
105
A
-20 ... 20
V
10
µs
-40 ... 175
°C
1200
V
Chopper - IGBT
VCES
Tj = 25 °C
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
52
A
43
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
58
A
48
A
35
A
ICRM = 3 x ICnom
105
A
-20 ... 20
V
10
µs
-40 ... 175
°C
IC
ICnom
ICRM
VGES
tpsc
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
ICRM = 3 x ICnom
48
35
Tj
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Inverse - Diode
VRRM
Tj = 25 °C
1200
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
44
A
35
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
49
A
IFnom
40
A
35
A
IFRM
IFRM = 3 x IFnom
105
A
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
170
A
-40 ... 175
°C
Tj
Freewheeling - Diode
VRRM
Tj = 25 °C
1200
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
44
A
35
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 175 °C
Ts = 70 °C
49
A
IF
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
40
A
35
A
105
A
170
A
-40 ... 175
°C
NAB
© by SEMIKRON
Rev. 4.0 – 11.11.2015
1
SKiiP 34NAB12T4V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Rectifier - Diode
MiniSKiiP® 3
VRRM
Tj = 25 °C
1600
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
52
A
39
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
57
A
IFnom
IFSM
2
It
Tj = 25 °C
370
A
Tj = 150 °C
270
A
10 ms
sin 180°
Tj = 25 °C
685
A2s
Tj = 150 °C
365
A2s
-40 ... 150
°C
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
Tstg
Features
Visol
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
A
A
10 ms
sin 180°
Tj
SKiiP 34NAB12T4V1
43
13
AC sinus 50 Hz, 1 min
80
A
-40 ... 125
°C
2500
V
Characteristics
Symbol
Conditions
Inverter - IGBT
IC = 35 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
30
34
mΩ
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 1 mA
ICES
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 150 °C
5
44
47
mΩ
5.8
6.5
V
0.1
0.3
mA
f = 1 MHz
1.95
nF
f = 1 MHz
0.16
nF
f = 1 MHz
0.12
nF
nC
QG
- 8 V...+ 15 V
200
RGint
Tj = 25 °C
VCC = 600 V
IC = 35 A
RG on = 18 Ω
RG off = 18 Ω
0
Tj = 150 °C
Ω
30
ns
Tj = 150 °C
35
ns
Tj = 150 °C
4.3
mJ
Tj = 150 °C
300
ns
Tj = 150 °C
55
ns
Tj = 150 °C
3.3
mJ
td(on)
tr
Eon
td(off)
tf
Eoff
VGE = +15/-15 V
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
0.85
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
0.7
K/W
NAB
2
Rev. 4.0 – 11.11.2015
© by SEMIKRON
SKiiP 34NAB12T4V1
Characteristics
Symbol
Conditions
Chopper - IGBT
IC = 35 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
Tj = 25 °C
0.80
0.90
V
Tj = 150 °C
0.70
0.80
V
Tj = 25 °C
30
34
mΩ
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 1 mA
ICES
QG
RGint
td(on)
tr
td(off)
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
typ.
rCE
Eon
Features
min.
Tj = 150 °C
44
47
mΩ
5.8
6.5
V
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
0.1
0.3
mA
- 8 V...+ 15 V
200
Tj = 25 °C
VCC = 600 V
IC = 35 A
RG on = 18 Ω
RG off = 18 Ω
0
Ω
30
ns
tf
Tj = 150 °C
5
nC
Tj = 150 °C
35
ns
Tj = 150 °C
4.3
mJ
Tj = 150 °C
300
ns
Tj = 150 °C
55
ns
Tj = 150 °C
3.3
mJ
Eoff
VGE = +15/-15 V
Rth(j-s)
per IGBT, λpaste=0.8 W/(mK)
0.85
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
0.7
K/W
Inverse - Diode
VF = VEC IF = 35 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
chiplevel
Tj = 25 °C
2.30
2.62
V
Tj = 150 °C
2.29
2.62
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
29
32
mΩ
Tj = 150 °C
40
43
mΩ
Rth(j-s)
IF = 35 A
Tj = 150 °C
di/dtoff = 1250 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per Diode, λpaste=0.8 W/(mK)
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
IRRM
Qrr
Err
Freewheeling - Diode
VF = VEC IF = 35 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
chiplevel
2.4
mJ
1.2
K/W
1
K/W
2.62
V
Tj = 150 °C
2.29
2.62
V
Tj = 25 °C
1.30
1.50
V
Tj = 150 °C
0.90
1.10
V
Tj = 25 °C
29
32
mΩ
40
43
mΩ
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
Err
µC
2.30
Rth(j-s)
Qrr
A
5.6
Tj = 25 °C
Tj = 150 °C
IF = 35 A
Tj = 150 °C
di/dtoff = 1250 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per Diode, λpaste=0.8 W/(mK)
IRRM
34
34
A
5.6
µC
2.4
mJ
1.2
K/W
1
K/W
NAB
© by SEMIKRON
Rev. 4.0 – 11.11.2015
3
SKiiP 34NAB12T4V1
Characteristics
Symbol
Conditions
Rectifier - Diode
VF = VEC IF = 13 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
MiniSKiiP® 3
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.00
1.21
V
Tj = 125 °C
0.90
1.10
V
Tj = 25 °C
0.88
0.98
V
Tj = 125 °C
0.73
0.83
V
Tj = 25 °C
9.2
18
mΩ
13
21
Tj = 125 °C
mΩ
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
1.25
K/W
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
1.1
K/W
Module
Ms
SKiiP 34NAB12T4V1
to heat sink
w
2
2.5
82
Nm
g
LCE
nH
Temperature Sensor
Features
• Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
R100
Tr = 100 °C, tolerance = 3 %
R(T)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
1670 ±
3%
Ω
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤150°C (recommended
Tj,op=-40...+150°C)
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
NAB
4
Rev. 4.0 – 11.11.2015
© by SEMIKRON
SKiiP 34NAB12T4V1
Fig. 1: Typ. output characteristic
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4.0 – 11.11.2015
5
SKiiP 34NAB12T4V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. input bridge forward characteristic
6
Rev. 4.0 – 11.11.2015
© by SEMIKRON
SKiiP 34NAB12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
© by SEMIKRON
Rev. 4.0 – 11.11.2015
7
SKiiP 34NAB12T4V1
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
8
Rev. 4.0 – 11.11.2015
© by SEMIKRON