SKiiP 34NAB176V3
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Inverter - IGBT
MiniSKiiP® 3
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 34NAB176V3
VCES
Tj = 25 °C
1700
V
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
67
A
51
A
IC
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
80
A
ICnom
ICRM
VGES
tpsc
Tj
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤125°C (recommended
Tj,op=-40...+125°C)
• It(RMS) limited to 40A for L1, L2, L3, U, V,
W, -B, +B, B power connectors
• It(RMS) limited to 20A for -DC/U, -DC/V,
-DC/W power connectors
• Distance between terminals +T|-T and
–DC/W; +B and +DC; -B|-DC/U|DC/V
and –DC/W is not sufficient for basic
insulation
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
Tj = 125 °C
116
A
-20 ... 20
V
10
µs
-55 ... 150
°C
1700
V
VCES
Tj = 25 °C
IC
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
67
A
51
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
80
A
61
A
58
A
ICRM = 2 x ICnom
116
A
-20 ... 20
V
10
µs
-55 ... 150
°C
ICnom
ICRM
VGES
tpsc
Tj
Remarks
VCC = 1200 V
VGE ≤ 20 V
VCES ≤ 1700 V
A
A
Chopper - IGBT
IC
Features
ICRM = 2 x ICnom
61
58
VCC = 1200 V
VGE ≤ 20 V
VCES ≤ 1700 V
Tj = 125 °C
Inverse - Diode
VRRM
Tj = 25 °C
1700
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
66
A
47
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
77
A
IFnom
55
A
55
A
IFRM
IFRM = 2 x IFnom
110
A
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
550
A
-40 ... 150
°C
Tj
Freewheeling - Diode
VRRM
Tj = 25 °C
1700
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
66
A
47
A
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
77
A
IF
IFnom
IFRM
IFRM = 2 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
55
A
55
A
110
A
550
A
-40 ... 150
°C
NAB
© by SEMIKRON
Rev. 2.0 – 17.11.2015
1
SKiiP 34NAB176V3
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Rectifier - Diode
MiniSKiiP® 3
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
VRRM
Tj = 25 °C
1800
V
IF
λpaste=0.8 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
97
A
70
A
IF
λpaste=2.5 W/(mK) Ts = 25 °C
Tj = 150 °C
Ts = 70 °C
110
A
80
A
IFnom
DC current
57
A
IFSM
10 ms
sin 180°
Tj = 25 °C
635
A
Tj = 150 °C
490
A
10 ms
sin 180°
Tj = 25 °C
2000
A2s
Tj = 150 °C
1200
A2s
-40 ... 150
°C
2
It
Tj
Module
It(RMS)
Tterminal = 80 °C, 20 A per spring
SKiiP 34NAB176V3
Tstg
Features
Characteristics
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤125°C (recommended
Tj,op=-40...+125°C)
• It(RMS) limited to 40A for L1, L2, L3, U, V,
W, -B, +B, B power connectors
• It(RMS) limited to 20A for -DC/U, -DC/V,
-DC/W power connectors
• Distance between terminals +T|-T and
–DC/W; +B and +DC; -B|-DC/U|DC/V
and –DC/W is not sufficient for basic
insulation
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
Visol
Symbol
AC sinus 50 Hz, 1 min
Conditions
Inverter - IGBT
IC = 58 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
min.
Tj = 25 °C
2.00
2.45
V
Tj = 125 °C
2.45
2.90
V
Tj = 25 °C
1.00
1.20
V
Tj = 125 °C
0.90
1.10
V
Tj = 25 °C
17
22
mΩ
VGE = VCE V, IC = 2.4 mA
ICES
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
Cres
V
Unit
VGE(th)
VCE = 25 V
VGE = 0 V
2500
max.
VGE = 15 V
chiplevel
Coes
A
°C
typ.
rCE
Cies
60
-40 ... 125
Tj = 125 °C
5.2
27
31
mΩ
5.8
6.4
V
0.1
0.3
mA
f = 1 MHz
5.00
nF
f = 1 MHz
0.21
nF
f = 1 MHz
0.17
nF
nC
QG
- 8 V...+ 15 V
480
RGint
16
Ω
290
ns
40
ns
11.2
mJ
650
ns
100
ns
12.8
mJ
Rth(j-s)
Tj = 25 °C
VCC = 900 V
Tj = 125 °C
IC = 40 A
Tj = 125 °C
RG on = 1 Ω
Tj = 125 °C
RG off = 1 Ω
di/dton = 990 A/µs Tj = 125 °C
di/dtoff = 250 A/µs Tj = 125 °C
du/dt = 4000 V/µs
VGE = +15/-15 V
Tj = 125 °C
Ls = 45 nH
per IGBT, λpaste=0.8 W/(mK)
0.57
K/W
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
0.42
K/W
td(on)
tr
Eon
td(off)
tf
Eoff
NAB
2
Rev. 2.0 – 17.11.2015
© by SEMIKRON
SKiiP 34NAB176V3
Characteristics
Symbol
Conditions
Chopper - IGBT
IC = 58 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
chiplevel
MiniSKiiP® 3
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 34NAB176V3
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤125°C (recommended
Tj,op=-40...+125°C)
• It(RMS) limited to 40A for L1, L2, L3, U, V,
W, -B, +B, B power connectors
• It(RMS) limited to 20A for -DC/U, -DC/V,
-DC/W power connectors
• Distance between terminals +T|-T and
–DC/W; +B and +DC; -B|-DC/U|DC/V
and –DC/W is not sufficient for basic
insulation
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
typ.
max.
Unit
Tj = 25 °C
2.00
2.45
V
Tj = 125 °C
2.45
2.90
V
Tj = 25 °C
1.00
1.20
V
Tj = 125 °C
0.90
1.10
V
Tj = 25 °C
17
22
mΩ
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE = VCE V, IC = 2.4 mA
ICES
QG
RGint
Tj = 125 °C
27
31
mΩ
5.8
6.4
V
VGE = 0 V, VCE = 1700 V, Tj = 25 °C
0.1
0.3
mA
- 8 V...+ 15 V
480
16
Ω
290
ns
Rth(j-s)
Tj = 25 °C
VCC = 900 V
Tj = 125 °C
IC = 40 A
Tj = 125 °C
RG on = 1 Ω
Tj = 125 °C
RG off = 1 Ω
di/dton = 990 A/µs Tj = 125 °C
di/dtoff = 250 A/µs Tj = 125 °C
du/dt = 4000 V/µs
VGE = +15/-15 V
Tj = 125 °C
Ls = 45 nH
per IGBT, λpaste=0.8 W/(mK)
Rth(j-s)
per IGBT, λpaste=2.5 W/(mK)
td(on)
tr
Eon
td(off)
tf
Eoff
Features
min.
Inverse - Diode
VF = VEC IF = 55 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
chiplevel
rF
chiplevel
12.8
mJ
0.57
K/W
0.42
K/W
2.22
V
Tj = 25 °C
1.52
1.94
V
Tj = 125 °C
1.17
1.57
V
Tj = 25 °C
9.7
10
mΩ
Tj = 125 °C
11
12
mΩ
62
A
13.5
µC
6.6
mJ
0.84
K/W
0.68
K/W
Tj = 25 °C
2.06
2.51
V
Tj = 125 °C
1.79
2.22
V
Tj = 25 °C
1.52
1.94
V
Tj = 125 °C
1.17
1.57
V
Tj = 25 °C
9.7
10
mΩ
11
12
mΩ
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
Err
ns
1.79
Rth(j-s)
Qrr
ns
100
Tj = 125 °C
Tj = 125 °C
IF = 40 A
Tj = 125 °C
di/dtoff = 1050 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 900 V
per Diode, λpaste=0.8 W/(mK)
IRRM
650
V
per Diode, λpaste=2.5 W/(mK)
Freewheeling - Diode
VF = VEC IF = 55 A
VGE = 0 V
chiplevel
VF0
chiplevel
ns
mJ
2.51
Rth(j-s)
Err
40
11.2
2.06
Rth(j-s)
Qrr
nC
Tj = 25 °C
IF = 40 A
Tj = 125 °C
di/dtoff = 1050 A/µs T = 125 °C
j
VGE = -15 V
T
j = 125 °C
VCC = 900 V
per Diode, λpaste=0.8 W/(mK)
IRRM
5.2
62
A
13.5
µC
6.6
mJ
0.84
K/W
0.68
K/W
NAB
© by SEMIKRON
Rev. 2.0 – 17.11.2015
3
SKiiP 34NAB176V3
Characteristics
Symbol
Conditions
Rectifier - Diode
VF = VEC IF = 57 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
MiniSKiiP® 3
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 34NAB176V3
Features
• Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
chip
min.
typ.
max.
Unit
1.09
1.34
V
1.04
1.29
V
0.87
1.10
V
Tj = 125 °C
0.75
0.97
V
Tj = 25 °C
4.0
4.3
mΩ
5.1
5.6
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
0.6
Tj = 125 °C
mΩ
Rth(j-s)
per Diode, λpaste=0.8 W/(mK)
0.86
K/W
Rth(j-s)
per Diode, λpaste=2.5 W/(mK)
0.72
K/W
Module
Ms
to heat sink
2
2.5
Nm
w
82
g
LCE
26
nH
1670 ±
3%
Ω
Temperature Sensor
R100
Tr = 100 °C, tolerance = 3 %
R(T)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)2
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
Remarks
• Max. case temperature limited to
TC=125°C
• Product reliability results valid for
Tj≤125°C (recommended
Tj,op=-40...+125°C)
• It(RMS) limited to 40A for L1, L2, L3, U, V,
W, -B, +B, B power connectors
• It(RMS) limited to 20A for -DC/U, -DC/V,
-DC/W power connectors
• Distance between terminals +T|-T and
–DC/W; +B and +DC; -B|-DC/U|DC/V
and –DC/W is not sufficient for basic
insulation
• Please refer to MiniSKiiP “Technical
Explanations” and “Mounting
Instructions” for further information
NAB
4
Rev. 2.0 – 17.11.2015
© by SEMIKRON
SKiiP 34NAB176V3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2.0 – 17.11.2015
5
SKiiP 34NAB176V3
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. input bridge forward characteristic
6
Rev. 2.0 – 17.11.2015
© by SEMIKRON
SKiiP 34NAB176V3
pinout, dimensions
pinout
© by SEMIKRON
Rev. 2.0 – 17.11.2015
7
SKiiP 34NAB176V3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
8
Rev. 2.0 – 17.11.2015
© by SEMIKRON