Reliability Report

AOS Semiconductor
Product Reliability Report
AOT282L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOT282L. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOT282L passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOT282L uses trench MOSFET 80V technology that is uniquely optimized to provide the
most efficient high frequency switching performance. Both conduction and switching power losses
are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting..
Details refer to the datasheet.
II. Die / Package Information:
AOT282L
Standard sub-micron
80V N channel process
Package Type
TO220
Lead Frame
Bare Cu
Die Attach
Soft solder
Bond wire
Al wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOT282L
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@250°c
Temp = 150°c ,
Vgs=100% of
Vgsmax
-
Temp = 150°c ,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
HAST
130°c , 85%RH,
33.3 psi, Vgs =
100% of Vgs max
100 hrs
Pressure Pot
121°c , 29.7psi,
RH=100%
96 hrs
Temperature
Cycle
-65°c to 150°c ,
air to air,
250 / 500
cycles
HTGB
HTRB
168hrs
500 hrs
1000 hrs
Lot
Attribution
Total
Sample size
Number
of
Failures
Reference
Standard
11 lots
1815pcs
0
JESD22A113
1 lot
308pcs
0
JESD22A108
77 pcs / lot
308pcs
0
JESD22A108
(Note A*)
5 lots
77 pcs / lot
275pcs
0
JESD22A110
(Note A*)
11 lots
55 pcs / lot
847pcs
0
JESD22A102
(Note A*)
77 pcs / lot
0
JESD22A104
3 lots
(Note A*)
1 lot
3 lots
9 lots
(Note A*)
693pcs
77 pcs / lot
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 7
MTTF = 15704 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOT282L). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
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9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
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= 1.83 x 10 / [2x (2x77x168+3x2x77x500) x258] = 7
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MTTF = 10 / FIT = 1.38 x 10 hrs = 15704 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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