UNISONIC TECHNOLOGIES CO., LTD KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR TRIPLE DIFFUSED NPN TRANSISTOR DESCRIPTION The UTC KTD863 is a triple diffused NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage and high collector current capability, etc. The UTC KTD863 is suitable for voltage regulator, relay and ramp driver, etc. FEATURES * High collector-emitter voltage * High collector current capability ORDERING INFORMATION Ordering Number Lead Free Halogen Free KTD863L-x-T9N-B KTD863G-x-T9N-B KTD863L-x-T9N-K KTD863G-x-T9N-K Pin Assignment 1 2 3 E C B E C B Package TO-92NL TO-92NL Packing Tape Box Bulk MARKING INFORMATION PACKAGE TO-92NL MARKING L: Lead Free G: Halogen Free Data Code www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd UTC KTD863 1 1 of 3 QW-R211-020.a KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V 1 A DC IC Continuous Collector Current Pulse ICP 2 A Collector Power Dissipation PC 1 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance SYMBOL BVCEO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob TEST CONDITIONS IC=1mA, IB=0 VCB=50V, IE=0 VEB=4V, IC=0 IC=500mA, IB=50mA IC=500mA, IB=50mA IC=50mA,VCE=2V IC=1A,VCE=2V IC=50mA, VCE=10V VCB=10V, f=1MHz, IE=0 MIN 60 60 30 TYP MAX UNIT V 1 µA 1 μA 0.15 0.5 V 0.85 1.2 V 320 150 12 MHz pF CLASSIFICATION OF hFE1 RANK RANGE O 60~120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 100~200 GR 160~320 2 of 3 QW-R211-020.a KTD863 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R211-020.a