10 F112R6A035SCxx M439Ex8 T3 14

F112R6A035SC
target datasheet
flowPACK 1
1200V/35A
Features
flow1 housing
● Inverter, blocking diodes
● Very compact housing, easy to route
● IGBT4 technology
Target Applications
Schematic
● Power Regeneration
Types
● 10-F112R6A035SC-M439E08
● 10-F112R6A035SC01-M439E18
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
50
A
700
A
2450
A2s
95
W
Tjmax
150
°C
VCE
1200
V
33
A
tp limited by Tjmax
105
A
VCE ≤ 1200V, Tj ≤ Top max
70
A
79
W
±20
V
10
800
μs
V
175
°C
Blocking Diode
Repetitive peak reverse voltage
VRRM
DC forward current
IFAV
Surge forward current
IFSM
I2t-value
I2t
Power dissipation per Diode
Ptot
Maximum Junction Temperature
Tj=Tjmax
Th=80°C
tp=10ms
Tj=25°C
Tj=Tjmax
Th=80°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
IC
ICpulse
Turn off safe operating area
Power dissipation per IGBT
Ptot
Gate-emitter peak voltage
VGE
Short circuit ratings
tSC
VCC
Maximum Junction Temperature
copyright by Vincotech
Tj=Tjmax
Tj=Tjmax
Tj≤150°C
VGE=15V
Tjmax
1
Th=80°C
Th=80°C
Revision: 3
F112R6A035SC
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1200
V
18
A
30
A
38
W
Tjmax
175
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12.7
mm
Clearance
min 12.7
mm
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
Tj=25°C
IF
Tj=Tjmax
Th=80°C
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation per Diode
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Thermal Properties
Insulation Properties
Insulation voltage
Comparative tracking index
copyright by Vincotech
Vis
t=2s
DC voltage
CTI
>200
2
Revision: 3
F112R6A035SC
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Unit
Typ
Max
1.11
1.04
0.91
0.78
4
5
1.7
Blocking Diode
Forward voltage
VF
50
Threshold voltage (for power loss calc. only)
Vto
50
Slope resistance (for power loss calc. only)
rt
50
Reverse current
Ir
1600
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to heatsink per chip
RthJC
Thermal grease
thickness≤50um
λ = 1 W/mK
VGE(th)
VCE=VGE
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
V
mΩ
0.05
1.1
mA
0.74
K/W
0.49
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
VCE(sat)
IGES
Integrated Gate resistor
Rgint
Turn-on delay time
Rise time
Turn-off delay time
Fall time
35
15
ICES
Gate-emitter leakage current
0.0012
0
1200
0
20
tr
tf
Turn-on energy loss per pulse
Eon
Turn-off energy loss per pulse
Eoff
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
5
5.8
6.5
1.6
1.95
2.39
2.3
0.01
200
Rgoff=8 Ω
Rgon=8 Ω
600
±15
35
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
V
mA
nA
Ω
none
td(on)
td(off)
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
92
91.6
18
23.4
213
274
75.3
105
1.62
2.49
1.81
2.82
ns
mWs
1950
f=1MHz
25
0
155
Tj=25°C
pF
115
±15
35
Tj=25°C
270
Thermal grease
thickness≤50um
λ = 1 W/mK
nC
1.2
K/W
N/A
Inverter Diode
Diode forward voltage
Peak reverse recovery current
VF
IRRM
Reverse recovery time
trr
Reverse recovered charge
Qrr
Peak rate of fall of recovery current
Rgon=8 Ω
600
±15
di(rec)max
/dt
Reverse recovered energy
Erec
Thermal resistance chip to heatsink per chip
RthJH
Thermal resistance chip to case per chip
RthJC
copyright by Vincotech
15
Thermal grease
thickness≤50um
λ = 1 W/mK
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1.35
1.90
1.91
16.06
433.4
2.75
109
1.16
2.35
V
A
ns
μC
A/μs
mWs
2.52
K/W
tbd.
3
Revision: 3
F112R6A035SC
target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Unit
Max
Thermistor
Rated resistance
R
Deviation of R100
ΔR/R
Power dissipation
P
Tj=25°C
R100=1670 Ω
Tc=100°C
-5
Tc=100°C
Tj=25°C
Power dissipation constant
Ω
22000
5
%
200
mW
2
mW/K
B-value
B(25/50)
Tol. ±3%
Tj=25°C
3950
K
B-value
B(25/100)
Tol. ±3%
Tj=25°C
3996
K
Vincotech NTC Reference
Tj=25°C
B
Module Properties
Thermal resistance, case to heatsink
Module stray inductance
Chip module lead resistance, terminals -chip
RthCH
tbd.
LsCE
5
nH
Rcc'1+EE'
tbd.
mΩ
Mounting torque
M
3.8
Terminal connection torque
M
6.7
Weight
G
copyright by Vincotech
K/W
4
4.2
Nm
7
7.4
Nm
tbd.
4
g
Revision: 3
F112R6A035SC
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
12mm housing
12mm housing, without thermistor
Ordering Code
10-F112R6A035SC-M439E08
10-F112R6A035SC01-M439E18
in DataMatrix as
M439-E08
M439-E18
in packaging barcode as
M439-E08
M439-E18
Outline
Pinout
copyright by Vincotech
5
Revision: 3
F112R6A035SC
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Preliminary
Final
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Full Production
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright by Vincotech
6
Revision: 3
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