VS-10TTS08S-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage Surface Mount Phase Control SCR, 10 A FEATURES 2, 4 Anode 4 • Meets MSL level 1, per LF maximum peak of 260 °C • Designed and JEDEC®-JESD 47 2 3 1 1 Cathode qualified J-STD-020, according • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Gate TO-263AB (D2PAK) APPLICATIONS PRODUCT SUMMARY Package • Input rectification (soft start) TO-263AB Diode variation (D2PAK) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines Single SCR IT(AV) 6.5 A DESCRIPTION VDRM/VRRM 800 V VTM < 1.15 V IGT 15 mA TJ -40 to +125 °C The VS-10TTS08S-M3 high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 μm) copper 2.5 3.5 Aluminum IMS, RthCA = 15 °C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform VALUES UNITS 6.5 A IRMS 10 VRRM/VDRM 800 V ITSM 110 A 1.15 V 150 V/μs VT 6.5 A, TJ = 25 °C dV/dt dI/dt TJ 100 A/μs -40 to +125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA 800 800 1.0 Range VOLTAGE RATINGS PART NUMBER VS-10TTS08S-M3 Revision: 08-Jul-15 Document Number: 94891 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08S-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current SYMBOL IT(AV) IT(RMS) ITSM TEST CONDITIONS TC = 112 °C, 180° conduction half sine wave VALUES UNITS 6.5 10 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 95 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 110 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 45 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 64 A Maximum I2t for fusing I2t Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C 640 A2s Maximum on-state voltage drop VTM 6.5 A, TJ = 25 °C 1.15 V 17.3 m 0.85 V On-state slope resistance Threshold voltage Maximum reverse and direct leakage current Typical holding current Maximum latching current rt VT(TO) IRM/IDM IH IL Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VRRM/VDRM A2s 0.05 1.0 Anode supply = 6 V, resistive load, initial IT = 1 A, TJ = 25 °C 30 Anode supply = 6 V, resistive load, TJ = 25 °C 50 TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open mA V/μs 100 A/μs VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power SYMBOL TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current +IGM 1.5 A Maximum peak negative gate voltage -VGM 10 V Anode supply = 6 V, resistive load, TJ = - 65 °C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 20 Anode supply = 6 V, resistive load, TJ = 25 °C 15 Anode supply = 6 V, resistive load, TJ = 125 °C 10 Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2 Anode supply = 6 V, resistive load, TJ = 25 °C 1 Anode supply = 6 V, resistive load, TJ = 125 °C 0.7 TJ = 125 °C, VDRM = Rated value W mA V 0.2 0.1 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq TEST CONDITIONS TJ = 25 °C TJ = 125 °C 0.8 3 μs 100 Revision: 08-Jul-15 Document Number: 94891 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08S-M3 Series www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature TS Maximum thermal resistance, junction to case RthJC UNITS -40 to +125 For 10 s (1.6 mm from case) 260 DC operation 1.5 °C °C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 40 2 Approximate weight g 0.07 Case style D2PAK (SMD-220) Marking device oz. 10TTS08S 10TTS08 R thJC (DC) = 1.5 K/W 120 Conduction Angle 115 30° 60° 90° 110 120° 180° 105 0 1 2 3 4 5 6 7 Maximum Average On-state Power Loss (W) 125 8 180° 120° 90° 60° 30° 7 6 5 RMS Limit 4 3 Conduction Angle 2 10TTS08 TJ = 125°C 1 0 0 1 2 3 4 5 6 7 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics 125 10TTS08 R thJC (DC) = 1.5 K/W 120 Conduction Period 115 30° 60° 110 90° 120° 180° DC 105 0 2 4 6 8 10 12 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 12 DC 180° 120° 90° 60° 30° 10 8 6 RMS Limit 4 Conduction Period 10TTS08 TJ = 125°C 2 0 0 2 4 6 8 10 12 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 08-Jul-15 Document Number: 94891 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08S-M3 Series www.vishay.com Vishay Semiconductors 110 120 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 90 110 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A) 100 80 70 60 50 VS-10TTS08 100 90 80 70 60 50 40 1 10 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied VS-10TTS08 40 0.01 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 0.1 1 10 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 10TTS08 100 TJ = 25°C 10 TJ = 125°C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJC (°C/W) 10 Steady State Value (DC Operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 10TTS08 0.01 0.0001 0.001 0. 01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 08-Jul-15 Document Number: 94891 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10TTS08S-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 T T S 08 S 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating, RMS value 3 - Circuit configuration: TRL -M3 8 9 T = single thyristor 4 - Package: T = D2PAK 5 - Type of silicon: S = converter grade 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - Tape and reel option: TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10TTS08S-M3 50 1000 Antistatic plastic tubes VS-10TTS08STRR-M3 800 800 13" diameter reel VS-10TTS08STRL-M3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?95032 Revision: 08-Jul-15 Document Number: 94891 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0° to 8° Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC® outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000