Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification
1995 Sep 22
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
FEATURES
DESCRIPTION
 High efficiency
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343N package.
 Small size discrete power amplifier
 900 MHz and 1.9 GHz operating
areas
 Gold metallization ensures
excellent reliability.
lfpage
4
3
1
2
PINNING
APPLICATIONS
 Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Top view
MBK523
Marking code: T5.
Fig.1 SOT343N.
QUICK REFERENCE DATA
RF performance at Tamb = 25 C in a common-emitter test circuit.
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
c
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
1.9
3.6
200
5
50
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms
0.9
6
650
10
50
0.9
6
360
12.5
50
MODE OF OPERATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter

20
V
collector-emitter voltage
open base

10
V
emitter-base voltage
open collector

2.5
V

250
mA
VCBO
collector-base voltage
VCEO
VEBO
IC
collector current (DC)
IC(AV)
average collector current
Ptot
total power dissipation
Tstg
Tj

250
mA

400
mW
storage temperature
65
+150
C
junction temperature

175
C
up to Ts = 102 C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 102 C; note 1;
Ptot = 400 mW
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
VALUE
UNIT
180
K/W
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
CHARACTERISTICS
Tj = 25 C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
20

V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
10

V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5

V
ICES
collector cut-off current
VCE = 6 V; VBE = 0

100
A
hFE
DC current gain
IC = 50 mA; VCE = 5 V
25

Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz

3
pF
Cre
feedback capacitance
IC = 0; VCE = 6 V; f = 1 MHz

2
pF
MBG431
103
handbook, full pagewidth
Zth j-a
(K/W)
δ=1
0.75
102
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
tp
P
δ= T
t
tp
T
1
10−6
10−5
10−4
10−3
10−2
10−1
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
MLC819
2.0
handbook, halfpage
Cc
(pF)
1.5
1.0
0.5
0
0
Fig.3
1995 Sep 22
2
4
6
8
10
V CB (V)
Collector capacitance as a function of
collector-base voltage.
4
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
APPLICATION INFORMATION
RF performance at Tamb = 25 C in a common-emitter test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
c
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
1.9
3.6
200
5; typ. 7
50; typ. 60
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms
0.9
6
650
10
50
0.9
6
360
12.5
50
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
MLC820
10
handbook, halfpage
Gp
ηc
(dB)
8
MBG194
100
ηc
80
16
handbook, halfpage
Gp
(%)
ηc
(%)
Gp
(dB)
80
12
Gp
6
60
4
40
2
20
0
0
100
200
300
60
ηc
8
40
4
20
0
0.3
0
400
500
P L (mW)
20
0.5
0.7
Pulsed, class-AB operation.
Pulsed, class-AB operation.
VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for PL = 200 mW.
VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for PL = 600 mW.
Fig.4
1995 Sep 22
Power gain and efficiency as functions
of load power; typical values.
Fig.5
5
0.9
1.1
P L (mW)
Power gain and efficiency as functions
of load power; typical values.
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
TR1
bias transistor, BC548 or equivalent
note 1
C1, C4, C7
capacitor; notes 2 and 3
120 pF
C2
capacitor; note 2
6.8 pF
C3
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C6
capacitor; note 2
1.9 pF
DIMENSIONS
C8
Philips multilayer capacitor
1 nF, 10 V
C9
Philips capacitor
1500 F, 10 V
L1
6 turns enamelled 0.7 mm copper wire
length 3.5 mm
length 3 mm
L4
2 turns enamelled 0.7 mm copper wire
L2, L3
RF choke, Philips
R1
metal film resistor
275 
R2
metal film resistor
100 
R3
metal film resistor
10 
2222 032 14152
4312 020 36690
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
+Vbias
handbook, full pagewidth
+VCC
R1
R2
C9
L3
R3
TR1
L2
C4
C8
L4
L1
C1
C7
DUT
C2
C3
C5
C6
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22
CATALOGUE No.
6
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
TR1
bias transistor, BC548 or equivalent
note 1
C1, C6, C7, C8
capacitor; notes 2 and 3
24 pF
C2
capacitor; note 2
0.4 pF
C3
capacitor; note 2
2.4 pF
C4
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C9, C10
Philips capacitor
1500 F, 10 V
L1, L2
RF choke, Philips
R1, R2
metal film resistor
75 
R3, R4
metal film resistor
10 
2222 032 14152
4330 030 36301
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
handbook, full pagewidth
+Vbias
R1
L1
R2
L2
+VCC
TR1
C9
C10
C7
C8
C6
C1
DUT
C2
C3
C4
C5
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22
CATALOGUE No.
7
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
PACKAGE OUTLINE
Plastic surface-mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343N
1995 Sep 22
EUROPEAN
PROJECTION
8
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
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specifications and product descriptions, at any time and
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information supplied prior to the publication hereof.
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Semiconductors product is suitable and fit for the
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sale of NXP Semiconductors.
1995 Sep 22
9
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
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Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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1995 Sep 22
10
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Printed in The Netherlands
R77/01/pp11
Date of release: 1995 Sep 22
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