400 MHz low noise amplifier with the BFG540W/X

APPLICATION INFORMATION
400 MHz low noise amplifier
with the BFG540W/X
Philips Semiconductors
Application information
400 MHz low noise amplifier with the BFG540W/X
ABSTRACT
• Description of the product
The BFG540W/X is one of the Philips silicon planar epitaxial wideband transistors of the BFG500 series.
• Application area
Low voltage analog and digital UHF-applications in the GHz range.
• Presented application
A low noise amplifier for CDMA mode of operation for 400 MHz with a low power consumption.
• Main results
At a frequency of 400 MHz, a supply voltage of 3.0 V and a current consumption of approximately 7.5 mA, the amplifier
has an insertion power gain of approximately 15.5 dB, a noise figure of approximately 1.0 dB and a third order intercept
point of approximately 2 dBm (measured at input).
 PHILIPS ELECTRONICS N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property
rights.
1999 Dec 22
2
Philips Semiconductors
Application information
400 MHz low noise amplifier with the BFG540W/X
INTRODUCTION
With the Philips silicon wideband transistors BFG540W/X, it is possible to design Low Noise Amplifiers (LNAs) for UHF
applications with a low current and a low supply voltage. These amplifiers are well suited for the new generation low
voltage high frequency wireless applications. This application note gives an example of an LNA for 400 MHz Code
Division Multiple Access (CDMA) mode of operation (Chinese market).
CIRCUIT DESCRIPTION
The following initial conditions apply for the amplifier design:
• Vsupply = 3.0 V
• VCE = 2 V
• IC < 10 mA
• f = 400 MHz.
The circuit is designed to show the following performance:
• s212 ≈ 15 dB
• VSWRIN < 2
• VSWROUT < 2
• NF < 1.5 dB
• IP3i > 0 dBm.
The input and output matching is realised with an LC-combination. Also extra emitter inductance (micro stripline) is used
on both emitter leads to improve the matching and the noise figure.
CIRCUIT DIAGRAM
R1
handbook, full pagewidth
C2
C3
R3
C4
+Vsupply
C5
L2
W1
L1
input
50 Ω
C6
R2
output
50 Ω
C1
TR1
C7
µS1,
µS2:
L1
L2
µS1
µS2
W2
MGS729
Fig.1 Circuit diagram.
1999 Dec 22
L3
D1
3
Philips Semiconductors
Application information
400 MHz low noise amplifier with the BFG540W/X
COMPONENT LIST
Table 1
Component list for the 400 MHz LNA
COMPONENT
VALUE
UNIT
SIZE, MANUFACTURER
PURPOSE, COMMENT
TR1
BFG540W/X
SOT343N Philips
active element
R1
22
kΩ
0603 Philips
collector to base bias
R2
22
Ω
0603 Philips
s22 and stability improvement; reducing gain
R3
100
Ω
0603 Philips
collector bias, levelling hFE spread
C1
150
pF
0603 NP0 Philips
input to base match
C2
150
pF
0603 NP0 Philips
400 MHZ short (L1 to ground)
C3
22
nF
0603 X7R Philips
LF short; IP3 improvement
C4
22
nF
0603 X7R Philips
LF short; IP3 improvement
C5
150
pF
0603 NP0 Philips
400 MHZ short (L2 to ground)
C6
8.2
pF
0603 NP0 Philips
collector to output match
C7
4.7
pF
0603 NP0 Philips
collector to emitter output match; stability
improvement
L1
22
nH
0805CS Coilcraft
input match; base bias
L2
22
nH
0805CS Coilcraft
output match; collector bias
µS1
see Table 2
emitter induction: micro stripline and via-hole
µS2
see Table 2
emitter induction: micro stripline and via-hole
PCB
FR4
εr = 4.6; d = 0.5 mm
Table 2
Dimensions of the micro striplines µS1 and µS2 (see Fig.1)
DIMENSION
VALUE
UNIT
DESCRIPTION
L1
2.5
mm
length micro stripline; Zo ≈ 48 Ω
L2
1.0
mm
length interconnect micro stripline and via-hole area
L3
1.0
mm
length via-hole area
W1
0.5
mm
width micro stripline
W2
1.0
mm
width via-hole area
D1
0.4
mm
diameter of via-hole
1999 Dec 22
4
Philips Semiconductors
Application information
400 MHz low noise amplifier with the BFG540W/X
BOARD LAYOUT
The layout has been designed with the Hewlett Packard Microwave Design System (HP-MDS).
handbook, full pagewidth
µS1
input
C1
TR1
L1
C2
output
C7
C6
R2
C3
Vsupply
L2
R1
R3
µS2
C4
C5
MGS730
Fig.2 PCB layout.
1999 Dec 22
5
Philips Semiconductors
Application information
400 MHz low noise amplifier with the BFG540W/X
MEASUREMENTS
Measurements have been done on a simulation model (with realistic RF models of all parts used) as well as on an actual
printed-circuit board. The measurements have been done under the following conditions (unless otherwise specified):
• Vsupply = 3.0 V
• Isupply = 8 mA
• f = 400 MHz.
Table 3
Measuring results of the 400 MHz LNA
SYMBOL
s212
s122
VSWRIN
VSWROUT
NF
IP3i
PARAMETER
insertion power gain
reverse insertion power attenuation
input voltage standing wave ratio
output voltage standing wave ratio
noise figure
third order intercept point
CONDITIONS
VALUE
UNIT
note 1
Spice simulation model
15.5
dB
actual printed-circuit board
15.6
dB
Spice simulation model
−26.2
dB
actual printed-circuit board
−28
dB
note 1
note 1
Spice simulation model
1.7
actual printed-circuit board
1.8
note 1
Spice simulation model
1.6
actual printed-circuit board
2.0
note 2
Spice simulation model
1.3
dB
actual printed-circuit board
1.0
dB
Spice simulation model
6.7
dBm
actual printed-circuit board
2
dBm
∆f = 1 MHz; note 3
Notes
1. The circuit is stable for all frequencies.
2. The noise figure performance of the actual printed-circuit board is about 0.3 dB lower than the performance of the
simulation model. The difference is caused by the fact that the Spice model of the BFG540W/X is not optimized for
noise.
3. The IP3i performance of the actual printed-circuit board is about 4 dBm lower than the performance of the simulation
model. The difference is caused by the fact that the Spice model of the BFG540W/X is not optimized for IP3i.
1999 Dec 22
6
Philips Semiconductors
Application information
400 MHz low noise amplifier with the BFG540W/X
NOTES
1999 Dec 22
7
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SCA 68
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125006/01/pp8
Date of release: 1999
Dec 22
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