Data Sheet

BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Rev. 05 — 23 November 2007
Product data sheet
IMPORTANT NOTICE
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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In data sheets where the previous Philips references remain, please use the new links as
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depending on the version)
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
FEATURES
BFG67; BFG67/X; BFG67/XR
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG67
• High transition frequency
• Gold metallization ensures
excellent reliability.
APPLICATIONS
BFG67/X
BFG67/XR
1
collector
collector
collector
2
base
emitter
emitter
3
emitter
base
base
4
emitter
emitter
emitter
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
handbook, 2 columns
4
3
1
handbook, 2 columns
3
2
2
Top view
4
1
Top view
MSB014
MSB035
MARKING
TYPE NUMBER
CODE
BFG67 (Fig.1)
V3%
BFG67/X (Fig.1)
%MV
BFG67/XR (Fig.2)
V26
Fig.1
Simplified outline
SOT143B.
Fig.2
Simplified outline
SOT143R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
−
10
V
−
50
mA
−
300
mW
VCEO
collector-emitter voltage
IC
collector current (DC)
Ptot
total power dissipation
Ts ≤ 65 °C
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
0.5
−
pF
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 500 MHz
8
−
GHz
GUM
maximum unilateral power
gain
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
17
−
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
1.3
−
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
2.2
−
dB
open base
Rev. 05 - 23 November 2007
2 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
50
mA
Ptot
total power dissipation
−
380
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
175
°C
Ts ≤ 65 °C; see Fig.3; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
note 1
VALUE
UNIT
290
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBC984 - 1
400
handbook,
halfpage
Ptot
(mW)
300
200
100
0
0
50
100
150
200
T ( o C)
s
Fig.3 Power derating curve.
Rev. 05 - 23 November 2007
3 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
VCB = 5 V; IE = 0
−
−
50
hFE
DC current gain
IC = 15 mA; VCE = 5 V
60
100
−
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 500 MHz
−
8
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 8 V; f = 1 MHz
−
0.7
−
pF
nA
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
1.3
−
pF
Cre
feedback capacitance
IC = ic = 0; VCB = 8 V; f = 1 MHz
−
0.5
−
pF
GUM
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
17
−
dB
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
10
−
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V
Tamb = 25 °C; f = 1 GHz
−
1.3
−
dB
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
−
1.7
−
dB
IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
−
2.5
−
dB
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
−
3
−
dB
F
noise figure
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
Rev. 05 - 23 November 2007
4 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
MBB301
120
handbook, halfpage
BFG67; BFG67/X; BFG67/XR
MBB302
handbook,0.8
halfpage
Cre
(pF)
h FE
0.6
80
0.4
40
0.2
0
0
0
20
40
I C (mA)
60
VCE = 5 V.
Fig.4
0
4
8
12
VCB (V)
16
IC = ic = 0; f = 1 MHz.
DC current gain as a function of collector
current.
Fig.5
Feedback capacitance as a function of
collector-base voltage.
MBB303
10
MBB304
handbook,25
halfpage
handbook, halfpage
fT
(GHz)
8
gain
(dB)
20
6
15
4
10
2
5
MSG
G max
G UM
0
0
0
10
20
30
40
0
10
20
I C (mA)
IC (mA)
40
VCE = 8 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
VCE = 8 V; Tamb = 25 °; f = 2 GHz.
Fig.6
30
Transition frequency as a function of
collector current.
Fig.7 Gain as a function of collector current.
Rev. 05 - 23 November 2007
5 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB305
50
MBB306
50
gain
handbook, halfpage
handbook, halfpage
gain
(dB)
(dB)
40
40
G UM
30
G UM
30
MSG
MSG
20
20
G max
G max
10
10
0
10
10
2
10
3
f (MHz) 10
0
4
VCE = 8 V; IC = 5 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
10
10
2
10
3
4
VCE = 8 V; IC = 15 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
MBB307
handbook,50
halfpage
MBB308
4
handbook, halfpage
gain
f = 2 GHz
F
(dB)
(dB)
40
10
f (MHz)
G UM
3
1 GHz
900 MHz
30
MSG
500 MHz
2
20
G max
1
10
0
10
10
2
10
3
f (MHz)
10
VCE = 8 V; IC = 30 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
4
0
1
10
I C (mA)
100
VCE = 8 V.
Fig.10 Gain as a function of frequency.
Fig.11 Minimum noise figure as a function of
collector current.
Rev. 05 - 23 November 2007
6 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB309
4
handbook, halfpage
F
(dB)
I C = 30 mA
3
15 mA
5 mA
2
1
0
10 2
10 3
f (MHz)
10 4
VCE = 8 V.
Fig.12 Minimum noise figure as a function of
frequency.
BFG67/X
VCE
(V)
on
IC
(mA)
8
stability
circle
re
gi
1
le
5
un
500
st
ab
f
(MHz)
0.5
2
Noise Parameters
Fmin
(dB)
0.95
Gamma (opt)
(mag)
0.455
(ang)
33.8
0.2
0.288
5
Fmin=0.95 dB
Rn/50
10
OPT
+j
0
0.2
0.5
−j
1
2
5
10
∞
1.5 dB
10
2 dB
3 dB
0.2
5
2
0.5
1
MBB317
ZO = 50 Ω.
Fig.13 Noise circle figure.
Rev. 05 - 23 November 2007
7 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
BFG67/X
f
(MHz)
8
1.3
Gamma (opt)
(mag)
2
Fmin =1.3 dB
0.2
(ang)
0.375
1
0.5
5
Noise Parameters
Fmin
(dB)
stability
circle
IC
(mA)
un
s
reg table
ion
1000
VCE
(V)
65.9
Rn/50
0.304
5
OPT
10
+j
0.2
0
0.5
1
−j
2
5
∞
10
2 dB
10
5
3 dB
0.2
4 dB
2
0.5
MBB316
1
ZO = 50 Ω.
Fig.14 Noise circle figure.
BFG67/X
f
(MHz)
2000
VCE
(V)
8
1
IC
(mA)
0.5
2
5
Noise Parameters
Fmin
(dB)
2.2
0.2
Gamma (opt)
(mag)
(ang)
0.391
136.5
3 dB
OPT
0.184
12
5 dB
10
0.5
1
2
5
∞
10
G max
=12dB
Gamma (max)
0.839
0.2
0
–j
(mag)
4 dB
+j
Average Gain Parameters
GMAX
(dB)
5
Fmin =2.2 dB
Rn/50
11 dB
10
10 dB
9 dB
5
0.2
8 dB
(ang)
−170
2
0.5
1
MBB315
ZO = 50 Ω.
Fig.15 Noise circle figure.
Rev. 05 - 23 November 2007
8 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
1
handbook, full pagewidth
0.5
2
3 GHz
0.2
5
10
+j
0.2
0
0.5
1
2
5
∞
10
−j
10
40 MHz
5
0.2
2
0.5
MBB314
1
VCE = 8 V; IC = 15 mA; ZO = 50 Ω.
Fig.16 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
60°
150°
30°
40 MHz
+ϕ
180°
50
40
30
20
3 GHz
10
0°
−ϕ
30°
150°
120°
VCE = 8 V; IC = mA; ZO = 50 Ω.
60°
90°
MBB313
Fig.17 Common emitter forward transmission coefficient (S21).
Rev. 05 - 23 November 2007
9 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0.2
0
0.5
1
2
5
∞
10
40 MHz
−j
10
3 GHz
5
0.2
2
0.5
MBB312
1
VCE = 8 V; IC = 15 mA.
Fig.18 Common emitter reverse transmission coefficient (S12).
90°
handbook, full pagewidth
120°
60°
3 GHz
150°
180°
0.5
0.4
0.3
0.2
30°
+ϕ
40 MHz
0.1
0°
−ϕ
30°
150°
60°
120°
90°
MBB311
VCE = 8 V; IC = 15 mA.
Fig.19 Common emitter output reflection coefficient (S22).
Rev. 05 - 23 November 2007
10 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
SOT143B
Rev. 05 - 23 November 2007
11 of 14
NXP Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT143R
B
E
A
X
y
HE
v M A
e
bp
w M B
3
4
Q
A
A1
c
2
1
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.55
0.25
0.45
0.25
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-10
SOT143R
Rev. 05 - 23 November 2007
12 of 14
BFG67; BFG67/X; BFG67/XR
NXP Semiconductors
NPN 8 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 05 - 23 November 2007
13 of 14
BFG67; BFG67/X; BFG67/XR
NXP Semiconductors
NPN 8 GHz wideband transistors
Revision history
Table 1.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BFG67_X_XR_N_5
20071123
Product data sheet
-
BFG67_X_XR_4
•
Modifications:
Page 2; Table Marking code; row 1 and 2 code changed
BFG67_X_XR_4
(9397 750 04349)
19981002
Product specification
-
BFG67_SERIES_3
BFG67_SERIES_3
19950901
Product specification
-
BFG67_SERIES_2
BFG67_SERIES_2
-
Product specification
-
BFG67_SERIES_1
BFG67_SERIES_1
-
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 November 2007
Document identifier: BFG67_X_XR_N_5
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