Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT4822
Power MOSFET
DUAL N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION

The UT4822 can provide excellent RDS(ON) and low gate
charge by using advanced trench technology. The UT4822 is
suitable for using as a load switch or in PWM applications.
FEATURES

1
* 30V/8.5A
* Low RDS(ON)
* Reliable and Rugged
DFN-8(5x6)
SYMBOL

(7) (8)
D1
(5) (6)
D2
(4)
G2
(2)
G1
S2
(3)
S1
(1)

ORDERING INFORMATION
Ordering Number
Note:

SOP-8
UT4822G-S08-R
UT7852G-K08-5060-R
Pin Assignment: G: Gate
D: Drain
Package
SOP-8
DFN-8(5×6)
S: Source
Pin Assignment
1 2 3 4 5 6 7 8
S1 G1 S2 G2 D2 D2 D1 D1
S1 G1 S2 G2 D2 D2 D1 D1
Packing
Tape Reel
Tape Reel
MARKING
SOP-8
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Copyright © 2015 Unisonic Technologies Co., Ltd
DFN-8(5×6)
1 of 6
QW-R502-149.G
UT4822

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
RATINGS
UNIT
30
V
±20
V
8.5
A
40
A
SOP-8
2
W
Power Dissipation
PD
DFN-8(5×6)
2.7
W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)

SYMBOL
VDS
VGS
ID
IDM
THERMAL DATA
PARAMETER
Junction to Ambient

SYMBOL
SOP-8
DFN-8(5×6)
RATINGS
110
46
θJA
UNIT
°С/W
°С/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
SYMBOL
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V, ID=250uA
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
30
VGS(TH)
VDS=VGS, ID=250uA
VGS=10V, ID=8.5A
VGS=4.5V, ID=6A
1
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=15V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=15V, VGS=10V, ID=8.5A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=15V, VGS=10V, RG=3Ω,
Turn-ON Rise Time
tR
RL =1.8Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
Reverse Recovery Time
tRR
IF = 8.5A, dIF /dt = 100 A/μs
Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
1.8
13.4
21
MAX UNIT
1
±100
V
uA
nA
3
16
26
V
mΩ
mΩ
1040 1250
180
110
pF
pF
pF
19.2
2.6
4.2
5.2
4.4
17.3
3.3
7.5
6.5
25
5
nC
nC
nC
ns
ns
ns
ns
3
A
1
21
10
V
ns
nC
0.76
16.7
6.7
23
2 of 5
QW-R502-149.G
UT4822

Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance Characteristics
30
4V
10V
25
VDS=5V
1.60E+01
4.5V
20
Transfer Characteristics
2.00E+01
3.5V
1.20E+01
125°С
15
8.00E+00
25°С
10
VGS=3V
4.00E+00
5
Pulse width ≤80us,
duty cycle ≤0.5%.
0
0
ID=8.5A
Pulse width ≤80us,
duty cycle ≤0.5%.
4
2
2.5
3
3.5
Gate Source Voltage, VGS (V)
Body-Diode Characteristics
1.0E+01
1.0E+00
40
Source Current, IS (A)
On-Resistance, RDS(ON) (mΩ)
5
On-Resistance vs. Gate-Source Voltage
50
30
125°С
20
1.0E-01
125°С
1.0E-02
25°С
1.0E-03
1.0E-04
Pulse width ≤80us,
duty cycle ≤0.5%.
10
2
4
1.0E-05
8
Gate Source Voltage, VGS (V)
6
0.0
10
0.2
0.4
0.6
0.8
1.0
Source Drain Voltage, VSD (V)
Capacitance Characteristics
1500
VDS=15V
ID=8.5A
8
Pulse width ≤80us,
duty cycle ≤0.5%.
25°С
Gate-Charge Characteristics
10
Pulse width ≤80us,
duty cycle ≤0.5%.
1250
CISS
Capacitance (pF)
Gate Source Voltage, VGS (V)
1
2
3
4
Drain Source Voltage, VDS (V)
0.00E+00
1.5
6
4
2
1000
750
500
COSS
250
Pulse width ≤80us,
duty cycle ≤0.5%.
0
0
4
12
8
16
Gate Charge, QG (nC)
20
UNISONIC TECHNOLOGIES CO., LTD
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CRSS
0
0
5
10
15
20
25
30
Drain Source Voltage, VDS (V)
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QW-R502-149.G
UT4822
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Power (W)
Drain Current, ID (A)

Normalized Maximum Transient Thermal Impedance
Normalized Transient Thermal
Resistance,θJA
10
D=TON/T
TJ,PK=TA+PDM.θJA.θJA
θJA=62.5°С/W
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
1
PDM
0.1
TON
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
On-Resistance vs. Drain Current
and Gate Voltage
On-Resistance, RDS(ON) (mΩ)
26
24
22
VGS=4.5V
20
18
16
VGS=10V
14
12
10
0
5
10
15
Drain Current, ID (A)
20
UNISONIC TECHNOLOGIES CO., LTD
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4 of 5
QW-R502-149.G
UT4822
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Drain Current, ID (µA)
Drain Current, IDSS (µA)
Drain Current, ID (A)
Drain Current, ID (A)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-149.G
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