Datasheet

UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER
SWITCHING TRANSISTOR
FEATURES
* High hFE for Low base drive requirement
* Suitable for half bridge light ballast Applications
* Built-in Free-wheeling Diode makes it specially
suitable for light ballast Applications
* Well controlled storage-time spread for all range of hFE
1
TO-220
1: Base 2: Collector 3: Emitter
*Pb-free plating product number: 2SC5305L
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted.)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Pulse)*
Base Current (DC)
Base Current (Pulse)*
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
Tj
Tstg
RATINGS
800
400
12
5
10
2
4
75
150
-65 ~ 150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER
Thermal Resistance
Junction to Case
Junction to Ambient
UTC
SYMBOL
RATINGS
UNIT
RθJC
RθJA
1.65
62.5
℃/W
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
1
QW-R203-028,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(TC=25℃, unless otherwise noted.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
TEST CONDITIONS
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IE=1mA, IC=0
VCB=500V, IE=0
VEB = 9V, IC = 0
VCE=1V, IC=0.8A
DC Current Gain
VCE=1V,IC=2A
IC=0.8A, IB=0.08A
Collector-Emitter Saturation Voltage
VCE (sat)
IC=2A, IB=0.4A
IC=0.8A, IB=0.08A
Base-Emitter Saturation Voltage
VBE (sat)
IC=2A, IB=0.4A
Output Capacitance
Cob
VCB = 10V, f=1MHz
Turn ON Time
tON
VCC=300V, IC =2A
IB1 = 0.4A, IB2=-1A
Storage Time
tSTG
RL = 150Ω
Fall Time
tF
VCC=15V,VZ=300V
Storage Time
tSTG
IC = 2A,IB1 = 0.4A
Fall Time
tF
IB2 = -0.4A, LC=200µH
IF = 1A
Diode Forward Voltage
VF
IF = 2A
IF = 0.4A
Reverse recovery time*
trr
IF = 1A
(di/dt =10A/µs)
IF = 2A
*Pulse Test : Pulse Width=5mS, Duty cycles≦10%
MIN
800
400
12
2
1
IB = 0
0
2
3
4
5
6
7
8
COLLECTOR-EMITTER VOLTAGE, V
UTC
ns
1.5
1.6
V
V
ns
µs
µs
800
1.4
1.9
9
CE
VCE = 1V
10
(V)
25℃
-25℃
10
1
0.01
0.1
1
10
COLLECTOR CURRENT, I C (A)
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
150
V
FE
IB = 50mA
1
pF
ns
µs
µs
µs
Ta = 125℃
IB = 100mA
0
0.4
0.5
1.0
1.0
75
150
2
0.2
2.25
DC current Gain
DC CURRENT GAIN, h
COLLECTOR CURRENT, I C (A)
3
UNIT
V
V
V
µA
µA
22
8
100
IB = 500mA
IB = 450mA
IB = 400mA
IB = 350mA
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA
4
MAX
10
10
Static Characteristic
5
TYP
2
QW-R203-028,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
DC current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
100
10
SATURATION VOLTAGE, V
V CE(sat) (V)
hFE, DC CURRENT GAIN
25℃
-20℃
10
1
0.01
1
0.1
IC = 10 IB
BE(sat),
VCE = 5V
Ta = 125℃
10
VBE(sat)
1
VCE(sat)
0.1
0.01
0.01
COLLECTOR CURRENT, I C (A)
25℃
1
Ta = 125℃
-20℃
0.01
0.01
0.1
1
10
SATURATION VOLTAGE, V BE(sat) (V)
SATURATION VOLTAGE, V CE(sat) (V)
Base-Emitter Saturation Voltage
IC = 5IB
0.1
10
IC = 5IB
1
-20℃
25℃
Ta = 125℃
0.1
0.01
COLLECTOR CURRENT, IC (A)
f = 1MHz
CAPACITANCE, Cob (pF)
tSTG
1
t
F
(µS)
10
Collector Output Capacitance
STG,
TIME, t
1
1000
VCC = 300V
IC = 5IB1 = -2.5IB2
tF
0.1
0.1
COLLECTOR CURRENT, IC (A)
Switching Time
10
10
COLLECTOR CURRENT, I C (A)
Collector-Emitter Saturation Voltage
100
1
0.1
0.01
100
10
1
0.1
1
COLLECTOR CURRENT, I C (A)
UTC
10
1
10
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
100
COLLECTOR-BASE VOLTAGE, V CB (V)
3
QW-R203-028,A
UTC 2SC5305
NPN EPITAXIAL SILICON TRANSISTOR
Reverse Recovery Time
Forward Diode Voltage
10
1.4
1.2
1.0
0.8
1.0
1.5
2.0
FORWARD DIODE VOLTAGE, V
F
REVERSE RECOVERY TIME, trr
(µS)
(V)
1.6
1
0.1
0.01
FORWARD CURRENT, IF(A)
0.1
Safe Operating Area
10
Power Derating
100
C
(W)
100
10
1μs
10μs
DC
1
5ms
1ms
0.1
POWER DISSIPATION, P
COLLECTOR CURRENT, I C (A)
1
FORWARD DIODE CURRENT, I F (A)
80
60
40
20
0
0.01
10
100
COLLECTOR-EMITTER VOLTAGE, V
1000
CE
(V)
0
25
50
75
100
125
CASE TEMPERATURE, T
C
150
175
(℃)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
www.unisonic.com.tw
4
QW-R203-028,A
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