Si8419DB New Product Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −8 FEATURES ID (A)a rDS(on) (W) 0.035 @ VGS = −4.5 V −11.7 0.042 @ VGS = −2.5 V −10.7 0.052 @ VGS = −1.8 V −9.6 0.069 @ VGS = −1.5 V −8.3 Qg (Typ) 21 nC Product Is Completely D TrenchFETr Power MOSFET Pb-free D Industry First 1.5-V Rated MOSFET D Ultra Small MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.62 mm) and On-Resistance Per Footprint Area APPLICATIONS D Low Threshold Load Switch for Portable Devices − Low Power Consumption − Increased Battery Life S MICRO FOOT Bump Side View 3 Backside View G 2 D S 4 8419 xxx D Device Marking: 8419 xxx = Date/Lot Traceability Code D G Ordering Information: Si8419DB-T1—E1 1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS −8 Gate-Source Voltage VGS "5 Continuous Drain Current (TJ = 150_C) TA = 25_C ID Continuous Source-Drain Source Drain Diode Current −9.4 −7.8b, c −6.3b, c TA = 70_C Pulsed Drain Current IDM TC = 25_C TA = 25_C IS Maximum Power Dissipation TA = 25_C −5.7 −2.5b, c 6.25 PD Package Reflow Conditionsd 4 2.77b, c W 1.77b, c TA = 70_C Operating Junction and Storage Temperature Range A −25 TC = 25_C TC = 70_C V −11.7 TC = 25_C TC = 70_C Unit TJ, Tstg −55 to 150 VPR 260 IR/Convection 260 _C C Notes: a. Based on TC = 25_C. b. Surface Mounted on 1” x 1” FR4 Board. c. t = 10 sec d. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. e. In this document, any reference to the Case represents the body of the MICRO FOOT device and Foot is the bump. Document Number: 73310 s-50341—Rev. A, 28-Feb-05 www.vishay.com 1 Si8419DB New Product Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Steady State Symbol Typical Maximum RthJA 35 45 RthJB 16 20 Unit _C/W Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Maximum under steady state conditions is 85_C/W. SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = −250 mA −8 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient DVDS/TJ VGS(th) Temperature Coefficient DVGS(th)/TJ Gate Source Threshold Voltage Gate-Source VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs ID = −250 mA VDS = VGS, ID = −250 mA V −7.5 mV/_C −2.2 −0.35 VDS = VGS, ID = −5 mA −0.8 −0.6 VDS = 0 V, VGS = 5 V −100 VDS = 8 V, VGS = 0 V −1 VDS = −8 V, VGS = 0 V, TJ = 70_C −10 VDS v 5 V, VGS = −4.5 V −5 V nA mA A VGS = −4.5 V, ID = −1 A 0.029 0.035 VGS = −2.5 V, ID = −1 A 0.035 0.042 VGS = − 1.8 V, ID =− 1 A 0.043 0.052 VGS = − 1.5 V, ID =− 1 A 0.051 0.069 VDS = −4 V, ID = −1 A 0.7 1.2 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 1640 VDS = −4 V, VGS = 0 V, f = 1 MHz 590 pF 380 VDS = −4 V, VGS = −5 V, ID = −1 A VDS = −4 V, VGS = −4.5 V, ID= 1 A 24 26 21 32 1.8 3.7 VGS = − 0.1 V, f = 1 MHz 22 W td(on) 12 tr 25 40 260 390 155 240 td(off) tf nC VDD = =− 4 V, RL = 4 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W 20 ns Document Number: 73310 s-50341—Rev. A, 28-Feb-05 Si8419DB New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25_C −2.5 −25 IS = −1 A, VGS = 0 V −0.7 −1.1 A V Body Diode Reverse Recovery Time trr 150 250 ns Body Diode Reverse Recovery Charge Qrr 0.15 0.23 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = −1 1A A, di/dt =100A/ms =100A/ms, TJ = 25 _C 57 93 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73310 s-50341—Rev. A, 28-Feb-05 www.vishay.com 3 Si8419DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 25 VGS = 5 thru 2 V 20 15 I D − Drain Current (A) I D − Drain Current (A) 25 1.5 V 10 5 20 15 10 TC = 125_C 5 1V 25_C −55_C 0 0.0 0.5 1.0 1.5 2.0 0 0.00 2.5 0.25 VDS − Drain-to-Source Voltage (V) 0.50 0.75 1.00 1.25 1.50 1.75 2.00 7 8 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.08 Capacitance 2500 2000 C − Capacitance (pF) rDS(on) − On-Resistance (mW) VGS = 1.5 V 0.07 VGS = 1.8 V 0.06 0.05 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 1500 1000 Coss 500 0.03 0.02 Crss 0 0 5 10 15 20 25 0 1 ID − Drain Current (A) 1.2 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 1.3 VDS = 4 V ID = 1 A 4 3 2 1 4 5 6 On-Resistance vs. Junction Temperature VGS = 4.5 V, 2.5 V, 1.8 V, 1.5 V ID = 1 A 1.1 1.0 0.9 0 0 5 10 15 Qg − Total Gate Charge (nC) www.vishay.com 4 3 VDS − Drain-to-Source Voltage (V) Gate Charge 5 2 20 25 0.8 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 73310 s-50341—Rev. A, 28-Feb-05 Si8419DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage rDS(on) − Drain-to-Source On-Resistance (mW) 20 I S − Source Current (A) 10 TJ = 150_C TJ = 25_C ID = 1 A 0.07 0.06 TA = 125_C 0.05 TA = 25_C 0.04 0.03 0.02 1 0.0 0.08 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 VSD − Source-to-Drain Voltage (V) 2 3 4 5 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.8 80 0.7 ID = 250 mA 60 Power (W) VGS(th) (V) 0.6 0.5 40 0.4 20 0.3 0.2 −50 −25 0 25 50 75 100 125 0 150 0.001 0.01 0.1 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area, Junction-to-Ambient IDM Limited *Limited by rDS(on) I D − Drain Current (A) 10 P(t) = 0.0001 P(t) = 0.001 1 0.1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 10 P(t) = 1 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Document Number: 73310 s-50341—Rev. A, 28-Feb-05 www.vishay.com 5 Si8419DB New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 12 ID − Drain Current (A) 10 8 6 4 * The power dissipation PD is based on TJ(max) = 150_C, using junction-to-foot thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 0 25 50 75 100 125 150 TF − Foot Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 72_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 10−1 1 Square Wave Pulse Duration (sec) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 6 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73310 s-50341—Rev. A, 28-Feb-05 Si8419DB New Product Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 X 2, 0.8-mm PITCH) 4 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 e A A2 Silicon A1 Bump Note 2 b Diamerter e S Recommended Land E e 8419 XXX e S D Mark on Backside of Die NOTES (Unless Otherwise Specified): 1. Laser mark on the silicon die back, coated with a thin metal. 2. Bumps are Sn/Ag/Cu. 3. Non-solder mask defined copper landing pad. 4. The flat side of wafers is oriented at the bottom. MILLIMETERS* INCHES Dim Min Max Min Max A 0.600 0.650 0.0236 0.0256 A1 0.260 0.290 0.0102 0.0114 A2 0.340 0.360 0.0134 0.0142 b 0.370 0.410 0.0146 0.0161 D 1.520 1.600 0.0598 0.0630 E 1.520 1.600 0.0598 0.0630 e 0.750 0.850 0.0295 0.0335 S 0.370 0.380 0.0146 0.0150 * Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73310. Document Number: 73310 s-50341—Rev. A, 28-Feb-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1