LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 FOUR DIGIT LED DISPLAY (0.28 Inch) LFD251/22-XX/SRP103-1 DATA SHEET DOC. NO : QW0905- LFD251/22-XX/SRP103-1 REV. : A DATE : 15 - Nov - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD251/22-XX/SRP103-1 Page 2/7 Internal Circuit Diagram LFD2512-XX/SRP103-1 11 7 4 2 1 10 5 3 A B DIG. C D E F G DP2 LFD2522-XX/SRP103-1 1 12 A B DIG. C D E F G DP5 DP6 2 3 9 A B DIG. C D E F G DP3 3 6 A B DIG. C D E F G DP2 1 12 A B DIG. C D E F G DP5 DP6 2 9 A B DIG. C D E F G DP3 3 8 8 A B DIG. C D E F G DP4 11 7 4 2 1 10 5 4 A B DIG. C D E F G DP4 6 4 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LFD251/22-XX/SRP103-1 Electrical Connection PIN NO.1 LFD4359-XX/S2 PIN NO.1 LFD4369-XX/S2 1 Anode E 1 Cathode E 2 Anode D 2 Cathode D 3 Anode DP2,DP3,DP4,DP5,DP6 3 Cathode DP2,DP3,DP4,DP5,DP6 4 Anode C 4 Cathode C 5 Anode G 5 Cathode G 6 Common Cathode Dig.4,DP4 6 Common Anode Dig.4,DP4 7 Anode B 7 Cathode B 8 Common Cathode Dig.3,DP3 8 Common Anode Dig.3,DP3 9 Common Cathode Dig.2,DP5,DP6 9 Common Anode Dig.2.DP5,DP6 10 Anode F 10 Cathode F 11 Anode A 11 Cathode A 12 Common Cathode Dig.1,DP2 12 Common Anode Dig.1.DP2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LFD251/22-XX/SRP103-1 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT G Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ Iv(mcd) Vf(v) (nm) Min. Typ. Max. Min. IV-M Typ. Common Anode LFD2512-XX/SRP103-1 GaP LFD2522-XX/SRP103-1 Electrical λP (nm) 565 Green 30 1.7 2.1 Common Cathode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 1.35 2.35 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD251/22-XX/SRP103-1 Page 5/7 Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Emission Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LFD251/22-XX/SRP103-1 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 2.0 1.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 Fig.6 Directive Radiation 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LFD251/22-XX/SRP103-1 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11