LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 FOUR DIGIT LED DISPLAY (0.39 Inch) LFD435/69-XX DATA SHEET DOC. NO : QW0905-LFD435/69-XX REV. : A DATE : 14 - Oct - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LFD435/69-XX Package Dimensions 7.0(0.276") 40.18(1.582") L3 DIG.1 10.0 (0.39") DIG.2 L1 DIG.3 L2 DIG.4 12.8 (0.504") 10.16 (0.4") DP A LFD435/69-XX LIGITEK F G E 3.0±0.5 B C D 2.54X7=17.78(0.7") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. DP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LFD435/69-XX Internal Circuit Diagram LFD4359-XX 14 16 13 3 5 11 15 7 A B C D E F G DP A B C D E F G DP L1 L2 L3 A B C D E F G DP A B C D E F G DP LFD4369-XX DIG. 1 1 14 16 13 3 5 11 15 7 A B C D E F G DP 2 A B C D E F G DP 4 L1 L2 L3 DIG. 2 DIG. 3 6 DIG. 4 8 A B C D E F G DP A B C D E F G DP DIG. 1 1 DIG. 2 2 4 DIG. 3 6 DIG. 4 8 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LFD435/69-XX Electrical Connection LFD4359-XX PIN NO.1 LFD4369-XX PIN NO.1 1 Common Cathode Dig.1 1 Common Anode Dig.1 2 Common Cathode Dig.2 2 Common Anode Dig.2 3 Anode D 3 Cahtode D 4 Common Cathode L1,L2,L3 4 Common Anode L1,L2,L3 5 Anode E 5 Cathode E 6 Common Cathode Dig.3 6 Common Anode Dig.3 7 Anode DP 7 Cathode DP 8 Common Cathode Dig.4 8 Common Anode Dig.4 9 NC 9 NC 10 NO PIN 10 NO PIN 11 Anode F 11 Cahtode F 12 NO PIN 12 NO PIN 13 Anode C,L3 13 Cathode C,L3 14 Anode A,L1 14 Cathode A,L1 15 Anode G 15 Cathode G 16 Anode B,L2 16 Cathode B,L2 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LFD435/69-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT 9SEF Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 60 mA Power Dissipation Per Chip PD 75 mW Ir 10 μA Electrostatic Discharge ESD 2000 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Material Emitted or anode CHIP PART NO △λ Vf(v) (nm) Min. Iv(mcd) Typ. Max. Min. IV-M Typ. Common Anode LFD4359-XX AlGaInP LFD4369-XX Electrical λD (nm) Orange 605 17 1.7 2.1 Common Cathode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 37 50 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LFD435/69-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Dominant Wavelength λD nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 6/7 PART NO. LFD435/69-XX Typical Electro-Optical Characteristics Curve 9SEF CHIP Fig.2 Relative Intensity vs. Forward Current Fig.1 Forward current vs. Forward Voltage 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 1.0 2.0 3.0 4.0 5.0 1.0 10 Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25 ℃ 1.2 Forward Voltage@20mA Normalize @25 ℃ 1000 Forward Current(mA) Forward Voltage(V) 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 7/7 PART NO. LFD435/69-XX Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11