2.0 MB

The following document contains information on Cypress products.
FUJITSU MICROELECTRONICS
DATA SHEET
DS04-27253-3E
ASSP for Power Management Applications
1 ch DC/DC Converter IC Built-in
Switching FET, Synchronous Rectification,
and Down Conversion Support
MB39C014
■ DESCRIPTION
The MB39C014 is a current mode type 1-channel DC/DC converter IC built-in switching FET, synchronous
rectification, and down conversion support. The device is integrated with a switching FET, oscillator, error amplifier,
PWM control circuit, reference voltage source, and POWERGOOD circuit.
External inductor and decoupling capacitor are needed only for the external component.
As combining with external parts enables a DC/DC converter with a compact and high load response characteristic,
this is suitable as the built-in power supply for such as mobile phone/PDA, DVDs, and HDDs.
■ FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
High efficiency
: 96% (Max)
Output current (DC/DC)
: 800 mA (Max)
Input voltage range
: 2.5 V to 5.5 V
Operating frequency
: 2.0/3.2 MHz (Typ)
No flyback diode needed
Low dropout operation
: For 100% on duty
Built-in high-precision reference voltage generator : 1.20 V ± 2%
Consumption current in shutdown mode
: 1 µA or less
Built-in switching FET
: P-ch MOS 0.3 Ω (Typ) N-ch MOS 0.2 Ω (Typ)
High speed for input and load transient response in the current mode
Over temperature protection
Packaged in a compact package
: SON10
■ APPLICATIONS
•
•
•
•
•
•
Flash ROMs
MP3 players
Electronic dictionary devices
Surveillance cameras
Portable GPS navigators
Mobile phones
etc.
Copyright©2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2008.11
MB39C014
■ PIN ASSIGNMENT
(Top View)
VDD
OUT
MODE
VREFIN
FSEL
10
9
8
7
6
1
2
3
4
5
LX
GND
CTL
VREF
POWERGOOD
(LCC-10P-M04)
■ PIN DESCRIPTIONS
2
Pin No
Pin name
I/O
Description
1
LX
O
Inductor connection output pin. High impedance during shut down.
2
GND
⎯
Ground pin.
3
CTL
I
Control input pin. (L : Shut down / H : Normal operation)
4
VREF
O
Reference voltage output pin.
5
POWERGOOD
O
POWERGOOD circuit output pin. Internally connected to an N-ch MOS open
drain circuit.
6
FSEL
I
Frequency switch pin.
(L (open) : 2.0 MHz, H : 3.2 MHz)
7
VREFIN
I
Error amplifier (Error Amp) non-inverted input pin.
8
MODE
I
Use pin at L level or leave open.
9
OUT
I
Output voltage feedback pin.
10
VDD
⎯
Power supply pin.
DS04-27253-3E
MB39C014
■ I/O PIN EQUIVALENT CIRCUIT DIAGRAM
VDD
VDD
∗
LX
VREF
∗
GND
GND
VDD
∗
∗
OUT
VREFIN
∗
∗
GND
VDD
VDD
∗
CTL
FSEL
∗
∗
GND
GND
VDD
POWER
GOOD
∗
∗
MODE
GND
∗
GND
* : ESD Protection device
DS04-27253-3E
3
MB39C014
■ BLOCK DIAGRAM
VIN
VDD
10
CTL
ON/OFF
3
OUT
×3
9
ERR
−
Amplifier
VDD
+
5
POWERGOOD
POWER
GOOD
IOUT
Comparator
VREF
4
1.20 V
VREF
PWM
LX
Logic
VREFIN
VOUT
1
Control
7
DAC
MODE
GND
8
6
2
FSEL
4
GND
DS04-27253-3E
MB39C014
• Current mode
• Original voltage mode type:
Stabilize the output voltage by comparing two items below and on-duty control.
- Voltage (VC) obtained through negative feedback of the output voltage by Error Amp
- Reference triangular wave (VTRI)
• Current mode type:
Instead of the triangular wave (VTRI), the voltage (VIDET) obtained through I-V conversion of the sum of currents
that flow in the oscillator (rectangular wave generation circuit) and SW FET is used.
Stabilize the output voltage by comparing two items below and on-duty control.
- Voltage (VC) obtained through negative feedback of the output voltage by Error Amp
- Voltage (VIDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular
wave generation circuit) and SW FET
Voltage mode type model
Current mode type model
VIN
VIN
Oscillator
Vc
S
Vc
R
VTRI
VIDET
Vc
Q
SR-FF
VIDET
VTRI
Vc
ton
toff
toff
ton
Note : The above models illustrate the general operation and an actual operation will be preferred in the IC.
DS04-27253-3E
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MB39C014
■ FUNCTION OF EACH BLOCK
• PWM Logic control circuit
The built-in P-ch and N-ch MOS FETs are controlled for synchronization rectification according to the frequency
(2.0 MHz/3.2 MHz) oscillated from the built-in oscillator (square wave oscillation circuit).
• IOUT comparator circuit
This circuit detects the current (ILX) which flows to the external inductor from the built-in P-ch MOS FET.
By comparing VIDET obtained through I-V conversion of peak current IPK of ILX with the Error Amp output, the builtin P-ch MOS FET is turned off via the PWM Logic Control circuit.
• Error Amp phase compensation circuit
This circuit compares the output voltage to reference voltages such as VREF. This IC has a built-in phase
compensation circuit that is designed to optimize the operation of this IC. This needs neither to be considered
nor addition of a phase compensation circuit and an external phase compensation device.
• VREF circuit
A high accuracy reference voltage is generated with BGR (bandgap reference) circuit. The output voltage is
1.20 V (Typ).
• POWERGOOD circuit
The POWERGOOD circuit monitors the voltage at the OUT pin. The POWERGOOD pin is open drain output.
Use the pin with pull-up using the external resistor in the normal operation.
When the CTL is at the H level, the POWERGOOD pin becomes the H level. However, if the output voltage drops
because of over current and etc, the POWERGOOD pin becomes the L level.
Timing chart example : (POWERGOOD pin pulled up to VIN)
VIN
VUVLO
CTL
VOUT × 97%
VOUT
POWERGOOD
(pull up to VIN)
tDLYPG or less
tDLYPG
tDLYPG
VUVLO : UVLO threshold voltage
tDLYPG : POWERGOOD delay time
6
DS04-27253-3E
MB39C014
• Protection circuit
This IC has a built-in over-temperature protection circuit.
The over-temperature protection circuit turns off both N-ch and P-ch switching FETs when the junction
temperature reaches +135 °C. When the junction temperature comes down to + 110 °C, the switching FET is
returned to the normal operation.
Since the PWM control circuit of this IC is in the control method in current mode, the current peak value is also
monitored and controlled as required.
• FUNCTION TABLE
Input
Output
MODE
Switching
OUTPUT pin
CTL
FSEL
VREF
POWERGOOD
frequency
voltage
Shutdown mode
Operation mode
⎯
L
*
2.0 MHz
H
L
3.2 MHz
H
H
Output stop
Output
stop
Function stop
VOUT voltage output
1.2 V
Operation
* : Don't care
DS04-27253-3E
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MB39C014
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Power supply voltage
Signal input voltage
Symbol
VDD
VISIG
Condition
Rating
Min
Max
VDD pin
− 0.3
+ 6.0
OUT pin
− 0.3
VDD + 0.3
CTL, MODE, FSEL pins
− 0.3
VDD + 0.3
VREFIN pin
− 0.3
VDD + 0.3
Unit
V
V
POWERGOOD pull-up voltage
VIPG
POWERGOOD pin
− 0.3
+ 6.0
V
LX voltage
VLX
LX pin
− 0.3
VDD + 0.3
V
LX peak current
IPK
ILX
⎯
1.8
A
⎯
2632*1, *2, *3
⎯
980*1, *2, *4
⎯
1053*1, *2, *3
⎯
392*1, *2, *4
Ta ≤ + 25 °C
Power dissipation
PD
Ta = + 85 °C
Operating ambient temperature
Storage temperature
mW
mW
Ta
⎯
− 40
+ 85
°C
TSTG
⎯
− 55
+ 125
°C
*1 : Power dissipation value between + 25 °C and + 85 °C is obtained by connecting these two points with a straight
line
*2 : When mounted on a four- layer epoxy board of 11.7 cm × 8.4 cm
*3 : Connection at exposure pad with thermal via. (Thermal via 4 holes)
*4 : Connection at exposure pad, without a thermal via.
Notes • The use of negative voltages below − 0.3 V to the GND pin may create parasitic transistors on LSI lines,
which can cause abnormal operation.
• This device can be damaged if the LX pin is short-circuited to VDD or GND.
• Take measures not to keep the FSEL pin falling below the GND potential of this IC as much as possible.
In addition to erroneous operation, the IC may latch up and destroy itself if 110 mA or more current flows
from this pin.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
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MB39C014
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
VDD
Value
Unit
Min
Typ
Max
⎯
2.5
3.7
5.5
V
VREFIN
⎯
0.15
⎯
1.20
V
VCTL
⎯
0
⎯
5.0
V
LX current
ILX
⎯
⎯
⎯
800
mA
POWERGOOD current
IPG
⎯
⎯
⎯
1
mA
2.5 V ≤ VDD ≤ 3.0 V
⎯
⎯
0.5
3.0 V ≤ VDD ≤ 5.5 V
⎯
⎯
1
2.0 MHz (FSEL = L)
⎯
2.2
⎯
3.2 MHz (FSEL = H)
⎯
1.5
⎯
Power supply voltage
VREFIN voltage
CTL voltage
VREF output current
Inductor value
IROUT
L
mA
µH
Note : The output current from this device has a situation to decrease if the power supply voltage (VIN) and the DC/DC
converter output voltage (VOUT) differ only by a small amount. This is a result of slope compensation and will
not damage this device.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS04-27253-3E
9
MB39C014
■ ELECTRICAL CHARACTERISTICS
(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)
Parameter
Symbol
Pin
No.
IREFINM
Input current
IREFINL
7
IREFINH
DC/DC
converter
block
Condition
Value
Unit
Min
Typ
Max
VREFIN = 0.833 V
−100
0
+ 100
nA
VREFIN = 0.15 V
−100
0
+ 100
nA
VREFIN = 1.20 V
−100
0
+ 100
nA
2.45
2.50
2.55
V
Output voltage
VOUT
VREFIN = 0.833 V,
OUT = −100 mA
Input stability
LINE
2.5 V ≤ VDD ≤ 5.5 V *1
⎯
10
⎯
mV
− 100 mA ≥ OUT ≥
− 800 mA
⎯
10
⎯
mV
OUT = 2.0 V
0.6
1.0
1.5
MΩ
Output shorted to GND
0.9
1.2
1.7
A
FSEL = 0 V
1.6
2.0
2.4
MHz
FSEL = 3.7 V
2.56
3.20
3.84
MHz
⎯
45
80
µs
−40*
−20*
0*
mV
Load stability
LOAD
Out pin input
impedance
ROUT
LX peak current
Oscillation
frequency
9
IPK
fOSC1
1
fOSC2
C1 = 4.7 µF, OUT = 0 A,
VOUT = 90%
Rise delay time
tPG
SW NMOS FET
OFF voltage
VNOFF
⎯
SW PMOS FET
ON resistance
RONP
LX = −100 mA
⎯
0.30
0.47
Ω
SW NMOS FET
ON resistance
RONN
LX = −100 mA
⎯
0.20
0.36
Ω
ILEAKM
0 ≤ LX ≤ VDD*2
−1.0
⎯
+ 8.0
µA
ILEAKH
VDD = 5.5 V, 0 ≤ LX ≤ VDD*2
−2.0
⎯
+ 16.0
µA
+ 120* + 135* + 155*
°C
+ 95*
°C
LX leak current
Over temperature
protection
(Junction Temp.)
Protection
UVLO threshold
circuit block
voltage
UVLO hysteresis
width
3, 9
1
TOTPH
TOTPL
⎯
VTHH
VTHL
VHYS
⎯
⎯
10
⎯
+ 110* + 130*
2.07
2.20
2.33
V
1.92
2.05
2.18
V
0.08
0.15
0.25
V
* : Standard design value
(Continued)
10
DS04-27253-3E
MB39C014
(Continued)
(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)
Parameter
POWERGOOD
threshold
voltage
POWERGOOD
block
POWERGOOD
delay time
Value
Unit
Min
Typ
Max
VREFIN ×
3
× 0.93
VREFIN ×
3
× 0.97
VREFIN ×
3
× 0.99
V
VTHPG
*3
tDLYPG1
FSEL = 0 V
⎯
250
⎯
µs
FSEL = 3.7 V
⎯
170
⎯
µs
tDLYPG2
5
POWERGOOD = 250 µA
⎯
⎯
0.1
V
POWERGOOD
output current
IOH
POWERGOOD = 5.5 V
⎯
⎯
1.0
µA
CTL pin
input current
VREF voltage
VREF load
stability
Shut down
power supply
current
General
Condition
VOL
FSEL threshold
voltage
Reference
voltage
block
Pin
No.
POWERGOOD
output voltage
CTL threshold
voltage
Control
block
Symbol
VTHHCT
⎯
0.55
0.95
1.45
VTHLCT
⎯
0.40
0.80
1.30
⎯
⎯
1.0
⎯
2.96
⎯
⎯
⎯
⎯
⎯
0.74
VREF = −2.7 µA,
OUT = −100 mA
1.176
1.200
1.224
V
VREF = −1.0 mA
⎯
⎯
20
mV
IVDD1
CTL = 0 V,
All circuits in OFF state
⎯
⎯
1.0
µA
IVDD1H
CTL = 0 V, VDD = 5.5 V
⎯
⎯
1.0
µA
CTL = 3.7 V, OUT = 0 A,
FSEL = 0 V
⎯
4.0
8.0
mA
CTL = 3.7 V,
VOUT = 90%*4
⎯
800
1500
µA
3
CTL = 3.7 V
IICTL
VTHHFS
VTHLFS
6
VREF
4
LOADREF
Standby power
supply current
(DC/DC)
IVDD2
Power-on
invalid current
IVDD
10
V
µA
V
*1 : The minimum value of VDD is the 2.5 V or VOUT setting value + 0.6 V, whichever is higher.
*2 : The + leak at the LX pin includes the current of the internal circuit.
*3 : Detected with respect to the output voltage setting value of VREFIN
*4 : Current consumption based on 100% ON-duty (High side FET in full ON state). The SW FET gate drive current
is not included because the device is in full ON state (no switching operation). Also the load current is not
included.
DS04-27253-3E
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MB39C014
■ TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS
VDD
MB39C014
VDD
SW
3
CTL
VIN
VDD 10
C2
R5
SW
L1
8 MODE
4
SW
VREF
LX
1
OUT
9
VOUT
IOUT
C1
R1
R3-1
6
FSEL
7
VREFIN
R3-2
POWER
GOOD
5
GND
2
GND
R4
C6
Output voltage = VREFIN × 2.97
Component
Specification
Vendor
R1
1 MΩ
KOA
RK73G1JTTD D 1 MΩ
R3-1
R3-2
7.5 kΩ
120 kΩ
SSM
SSM
RR0816-752-D
RR0816-124-D
R4
300 kΩ
SSM
RR0816-304-D
R5
1 MΩ
KOA
RK73G1JTTD D 1 MΩ
C1
4.7 µF
TDK
C2012JB1A475K
C2
4.7 µF
TDK
C2012JB1A475K
C6
0.1 µF
TDK
C1608JB1H104K
For adjusting slow start
time
2.2 µH
TDK
VLF4012AT-2R2M
2.0 MHz operation
1.5 µH
TDK
VLF4012AT-1R5M
3.2 MHz operation
L1
Part Number
Remark
At VOUT = 2.5 V setting
Note : These components are recommended based on the operating tests authorized.
TDK : TDK Corporation
SSM : SUSUMU Co., Ltd
KOA : KOA Corporation
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MB39C014
■ APPLICATION NOTES
[1] Selection of components
• Selection of an external inductor
Basically it dose not need to design inductor. This IC is designed to operate efficiently with a 2.2 µH (2.0 MHz
operation) or 1.5 µH (3.2 MHz operation) inductor.
The inductor should be rated for a saturation current higher than the LX peak current value during normal
operating conditions, and should have a minimal DC resistance. (100 mΩ or less is recommended.)
LX peak current value IPK is obtained by the following formula.
IPK = IOUT +
VIN − VOUT
L
×
D
fosc
L
: External inductor value
IOUT
: Load current
VIN
: Power supply voltage
×
1
2
= IOUT +
(VIN − VOUT) × VOUT
2 × L × fosc × VIN
VOUT : Output setting voltage
D
: ON- duty to be switched( = VOUT/VIN)
fosc : Switching frequency (2.0 MHz or 3.2 MHz)
ex) At VIN = 3.7 V, VOUT = 2.5 V, IOUT = 0.8 A, L = 2.2 µH, fosc = 2.0 MHz
The maximum peak current value IPK;
IPK = IOUT +
(VIN − VOUT) × VOUT
2 × L × fosc × VIN
= 0.8 A +
(3.7 V − 2.5 V) × 2.5 V
2 × 2.2 µH × 2 MHz × 3.7 V
=: 0.89 A
• I/O capacitor selection
• Select a low equivalent series resistance (ESR) for the VDD input capacitor to suppress dissipation from ripple
currents.
• Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor
current causes ripple currents on the output capacitor which, in turn, causes ripple voltages an output equal
to the amount of variation multiplied by the ESR value. The output capacitor value has a significant impact on
the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELECTRONICS generally recommends a 4.7 µF capacitor, or a larger capacitor value can be used if ripple voltages
are not suitable. If the VIN/VOUT voltage difference is within 0.6 V, the use of a 10 µF output capacitor value is
recommended.
• Types of capacitors
Ceramic capacitors are effective for reducing the ESR and afford smaller DC/DC converter circuit. However,
power supply functions as a heat generator, therefore avoid to use capacitor with the F-temperature rating
( − 80% to + 20%) . FUJITSU MICROELECTRONICS recommends capacitors with the B-temperature rating
( ± 10% to ± 20%).
Normal electrolytic capacitors are not recommended due to their high ESR.
Tantalum capacitor will reduce ESR, however, it is dangerous to use because it turns into short mode when
damaged. If you insist on using a tantalum capacitor, FUJITSU MICROELECTRONICS recommends the type
with an internal fuse.
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MB39C014
[2] Output voltage setting
The output voltage VOUT of this IC is defined by the voltage input to VREFIN. Supply the voltage for inputting to
VREFIN from an external power supply, or set the VREF output by dividing it with resistors.
The output voltage when the VREFIN voltage is set by dividing the VREF voltage with resistors is shown in the
following formula.
VOUT = 2.97 × VREFIN,
VREFIN =
R4
R3 + R4
× VREF
(VREF = 1.20 V)
MB39C014
VREF
4 VREF
R3
7 VREFIN
VREFIN
R4
Note : Refer to “■ APPLICATIN CIRCUIT EXAMPLES” for an example of this circuit.
Although the output voltage is defined according to the dividing ratio of resistance, select the resistance value
so that the current flowing through the resistance does not exceed the VREF current rating (1 mA) .
[3] About conversion efficiency
The conversion efficiency can be improved by reducing the loss of the DC/DC converter circuit.
The total loss (PLOSS) of the DC/DC converter is roughly divided as follows :
PLOSS = PCONT + PSW + PC
PCONT
: Control system circuit loss (The power used for this IC to operate, including the the gate driving
power for internal SW FETs)
PSW
: Switching loss (The loss caused during switching of the IC's internal SW FETs)
PC
: Continuity loss (The loss caused when currents flow through the IC's internal SW FETs and external
circuits )
The IC's control circuit loss (PCONT) is extremely small, less than 100 mW with no load.
As the IC contains FETs which can switch faster with less power, the continuity loss (PC) is more predominant
as the loss during heavy-load operation than the control circuit loss (PCONT) and switching loss (PSW) .
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MB39C014
Furthermore, the continuity loss (PC) is divided roughly into the loss by internal SW FET ON-resistance and by
external inductor series resistance.
PC = IOUT2 × (RDC + D × RONP + (1 − D) × RONN)
D
: Switching ON-duty cycle ( = VOUT / VIN)
RONP
: Internal P-ch SW FET ON resistance
RONN
: Internal N-ch SW FET ON resistance
RDC
: External inductor series resistance
IOUT
: Load current
The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency by
selecting components.
[4] Power dissipation and heat considerations
The IC is so efficient that no consideration is required in most of the cases. However, if the IC is used at a low
power supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration for
higher efficiency.
The internal loss (P) is roughly obtained from the following formula :
P = IOUT2 × (D × RONP + (1 − D) × RONN)
D
: Switching ON-duty cycle ( = VOUT / VIN)
RONP
: Internal P-ch SW FET ON resistance
RONN
: Internal N-ch SW FET ON resistance
IOUT
: Output current
The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching loss
and the control circuit loss as well but they are so small compared to the continuity loss they can be ignored.
In this IC with RONP greater than RONN, the larger the on-duty cycle, the greater the loss.
When assuming VIN = 3.7 V, Ta = + 70 °C for example, RONP = 0.42 Ω and RONN = 0.36 Ω according to the graph
“MOS FET ON resistance vs. Operating ambient temperature”. The IC's internal loss P is 144 mW at VOUT = 2.5
V and IOUT = 0.6 A. According to the graph “Power dissipation vs. Operating ambient temperature”, the power
dissipation at an operating ambient temperature Ta of + 70 °C is 539 mW and the internal loss is smaller than
the power dissipation.
DS04-27253-3E
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MB39C014
[5] Transient response
Normally, IOUT is suddenly changed while VIN and VOUT are maintained constant, responsiveness including the
response time and overshoot/undershoot voltage is checked. As this IC has built-in Error Amp with an optimized
design, it shows good transient response characteristics. However, if ringing upon sudden change of the load
is high due to the operating conditions, add capacitor C6 (e.g. 0.1 µF). (Since this capacitor C6 changes the
start time, check the start waveform as well.) This action is not required for DAC input.
MB39C014
VREF
4 VREF
R3
7 VREFIN
VREFIN
C6
R4
[6] Board layout, design example
The board layout needs to be designed to ensure the stable operation of this IC.
Follow the procedure below for designing the layout.
• Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a thru-hole (TH)
near the pins of this capacitor if the board has planes for power and GND.
• Large AC currents flow between this IC and the input capacitor (Cin), output capacitor (CO), and external
inductor (L). Group these components as close as possible to this IC to reduce the overall loop area occupied
by this group. Also try to mount these components on the same surface and arrange wiring without thru-hole
wiring. Use thick, short, and straight routes to wire the net (The layout by planes is recommended.).
• The feedback wiring to the OUT should be wired from the voltage output pin closest to the output capacitor
(CO). The OUT pin is extremely sensitive and should thus be kept wired away from the LX pin of this IC as far
as possible.
• If applying voltage to the VREFIN pin through dividing resistors, arrange the resistors so that the wiring can
be kept as short as possible. Also arrange them so that the GND pin of the VREFIN resistor is close to the
IC's GND pin. Further, provide a GND exclusively for the control line so that the resistor can be connected via
a path that does not carry current. If installing a bypass capacitor for the VREFIN, put it close to the VREFIN pin.
• Try to make a GND plane on the surface to which this IC will be mounted. For efficient heat dissipation when
using the SON-10 package, FUJITSU MICROELECTRONICS recommends providing a thermal via in the
footprint of the thermal pad.
Layout Example of IC SW components
1 Pin
Co
Vo
GND
VIN
Cin
L
Feedback line
16
DS04-27253-3E
MB39C014
• Notes for Circuit Design
• The switching operation of this IC works by monitoring and controlling the peak current which, incidentally,
serves as form of short-circuit protection. However, do not leave the output short-circuited for long periods of
time. If the output is short-circuited where VIN < 2.9 V, the current limit value (peak current to the inductor)
tends to rise. Leaving in the short-circuit state, the temperature of this IC will continue rising and activate the
thermal protection.
Once the thermal protection stops the output, the temperature of the IC will go down and operation will resume,
after which the output will repeat the starting and stopping.
Although this effect will not destroy the IC, the thermal exposure to the IC over prolonged hours may affect the
peripherals surrounding it.
DS04-27253-3E
17
MB39C014
■ EXAMPLE OF STANDARD OPERATION CHARACTERISTICS
(Shown below is an example of characteristics for connection according to“■ TEST CIRCUIT FOR MEASURING
TYPICAL OPERATING CHARACTERISTICS”.)
Conversion efficiency vs. Load current
(2.0 MHz)
Conversion efficiency vs. Load current
(2.0 MHz)
100
VIN = 3.7 V
90
VIN = 3.0 V
80
70
VIN = 4.2 V
60
50
VIN = 5.0 V
40
30
Ta = +25 °C
VOUT = 2.5 V
FSEL = L
20
10
0
1
10
100
Conversion efficiency η (%)
Conversion efficiency η (%)
100
90
VIN = 3.7 V
80
VIN = 3.0 V
70
VIN = 4.2 V
60
50
VIN = 5.0 V
40
30
Ta = +25 °C
VOUT = 1.2 V
FSEL = L
20
10
0
1000
1
10
1000
Conversion efficiency vs. Load current
(2.0 MHz)
Conversion efficiency vs. Load current
(2.0 MHz)
100
90
VIN = 3.7 V
80
VIN = 3.0 V
VIN = 4.2 V
70
60
VIN = 5.0 V
50
40
30
Ta = +25 °C
VOUT = 1.8 V
FSEL = L
20
10
Conversion efficiency η (%)
100
Conversion efficiency η (%)
100
Load current IOUT (mA)
Load current IOUT (mA)
VIN = 3.7 V
90
80
VIN = 4.2 V
70
60
50
VIN = 5.0 V
40
30
Ta = +25 °C
VOUT = 3.3 V
FSEL = L
20
10
0
0
1
10
100
Load current IOUT (mA)
1000
1
10
100
1000
Load current IOUT (mA)
(Continued)
18
DS04-27253-3E
MB39C014
Conversion efficiency vs. Load current
(3.2 MHz)
Conversion efficiency vs. Load current
(3.2 MHz)
100
VIN = 3.7 V
90
80
VIN = 3.0 V
70
VIN = 4.2 V
60
VIN = 5.0 V
50
40
30
Ta = +25 °C
VOUT = 2.5 V
FSEL = H
20
10
Conversion efficiency η (%)
Conversion efficiency η (%)
100
90
VIN = 3.7 V
80
70
VIN = 3.0 V
60
VIN = 4.2 V
50
VIN = 5.0 V
40
30
20
Ta = +25 °C
VOUT = 1.2 V
FSEL = H
10
0
0
1
10
100
1000
1
100
1000
Conversion efficiency vs. Load current
(3.2 MHz)
Conversion efficiency vs. Load current
(3.2 MHz)
100
90
Conversion efficiency η (%)
100
Conversion efficiency η (%)
10
Load current IOUT (mA)
Load current IOUT (mA)
VIN = 3.7 V
80
VIN = 3.0 V
70
VIN = 4.2 V
60
VIN = 5.0 V
50
40
30
Ta = +25 °C
VOUT = 1.8 V
FSEL = H
20
10
80
60
50
100
Load current IOUT (mA)
VIN = 5.0 V
40
30
Ta = +25 °C
VOUT = 3.3 V
FSEL = H
20
0
10
VIN = 4.2 V
70
10
0
1
VIN = 3.7 V
90
1000
1
10
100
1000
Load current IOUT (mA)
(Continued)
DS04-27253-3E
19
MB39C014
Output voltage vs. Input voltage
(3.2 MHz)
Output voltage vs. Input voltage
(2.0 MHz)
2.60
2.60
Output voltage VOUT (V)
2.56
2.54
IOUT = 0 A
2.52
2.50
2.48
2.46
2.44
2.42
2.56
2.54
IOUT = 0 A
2.52
2.50
2.48
2.46
2.44
IOUT = 100 mA
2.42
IOUT = 100 mA
2.40
2.40
2.0
3.0
4.0
5.0
6.0
2.0
3.0
4.0
5.0
6.0
Input voltage VIN (V)
Input voltage VIN (V)
Output voltage vs. Load current
(2.0 MHz)
Output voltage vs. Load current
(3.2 MHz)
2.60
2.60
Ta = +25 °C
VIN = 3.7 V
VOUT = 2.5 V setting
FSEL = L
2.56
2.54
Ta = +25 °C
VIN = 3.7 V
VOUT = 2.5 V setting
FSEL = H
2.58
Output voltage VOUT (V)
2.58
Output voltage VOUT (V)
Ta = +25 °C
VOUT = 2.5 V setting
FSEL = H
2.58
Output voltage VOUT (V)
Ta = +25 °C
VOUT = 2.5 V setting
FSEL = L
2.58
2.52
2.50
2.48
2.46
2.44
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.42
2.40
2.40
0
200
400
600
Load current IOUT (mA)
800
0
200
400
600
800
Load current IOUT (mA)
(Continued)
20
DS04-27253-3E
MB39C014
Reference voltage vs. Operating
ambient temperature
Reference voltage vs. Input voltage
1.3
Ta = +25 °C
VOUT = 2.5 V
1.28
Reference voltage VREF (V)
Reference voltage VREF (V)
1.3
1.26
1.24
1.22
1.2
1.18
1.16
1.14
1.24
1.22
1.2
1.18
1.16
1.14
1.12
1.1
1.1
3
4
5
6
Input current vs. Input voltage
9
9
8
8
Input current IIN (mA)
10
7
6
5
4
3
Ta = +25 °C
VOUT = 2.5 V
5
4
3
0
4.0
5.0
VIN = 3.7 V
VOUT = 2.5 V
2
0
3.0
+100
6
1
Input voltage VIN (V)
+50
7
1
2.0
0
Input current vs. Operating ambient
temperature
10
2
−50
Operating ambient temperature Ta ( °C)
Input voltage VIN (V)
Input current IIN (mA)
1.26
1.12
2
VIN = 3.7 V
VOUT = 2.5 V
1.28
6.0
−50
0
+50
+100
Operating ambient temperature Ta ( °C)
(Continued)
DS04-27253-3E
21
MB39C014
Oscillation frequency vs. Input voltage
(3.2 MHz)
Oscillation frequency fOSC2 (MHz)
Oscillation frequency fOSC1 (MHz)
Oscillation frequency vs. Input voltage
(2.0 MHz)
2.4
2.3
2.2
2.1
2.0
1.9
Ta = +25 °C
VOUT = 2.5 V
IOUT = 200 mA
FSEL = L
1.8
1.7
1.6
3.6
3.4
3.2
3.0
2.8
Ta = +25 °C
VOUT = 2.5 V
IOUT = 200 mA
FSEL = H
2.6
2.4
2.0
3.0
4.0
5.0
2.0
6.0
2.4
Oscillation frequency fOSC2 (MHz)
Oscillation frequency fOSC1 (MHz)
5.0
6.0
Oscillation frequency vs. Operating
ambient temperature (3.2 MHz)
Oscillation frequency vs. Operating
ambient temperature (2.0 MHz)
VIN = 3.7 V
VOUT = 2.5 V
IOUT = 200 mA
FSEL = L
2.2
4.0
Input voltage VIN (V)
Input voltage VIN (V)
2.3
3.0
2.1
2.0
1.9
1.8
1.7
1.6
3.6
VIN = 3.7 V
VOUT = 2.5 V
IOUT = 200 mA
FSEL = H
3.4
3.2
3.0
2.8
2.6
2.4
−50
0
+50
+100
Operating ambient temperature Ta ( °C)
−50
0
+50
+100
Operating ambient temperature Ta ( °C)
(Continued)
22
DS04-27253-3E
MB39C014
P-ch MOS FET ON resistance vs.
Operating ambient temperature
P-ch MOS FET ON resistance RONP (Ω)
MOS FET ON resistance RON (Ω)
MOS FET ON resistance vs.
Input voltage
0.6
0.5
P-ch
0.4
0.3
0.2
N-ch
0.1
Ta = +25 °C
0.0
3.0
4.0
5.0
VIN = 3.7 V
0.5
0.4
0.3
VIN = 5.5 V
0.2
0.1
0.0
−50
6.0
0
+50
+100
Input voltage VIN (V)
Operating ambient temperature Ta ( °C)
N-ch MOS FET ON resistance vs.
Operating ambient temperature
CTL threshold voltage VTH vs.
Input voltage
1.4
0.6
CTL threshold voltage VTH (V)
N-ch MOS FET ON resistance RONN (Ω)
2.0
0.6
0.5
VIN = 3.7 V
0.4
0.3
0.2
VIN = 5.5 V
0.1
VTHHCT
1.2
VTHLCT
1.0
0.8
Ta = +25 °C
VOUT = 2.5 V
0.6
0.4
VTHHCT : OFF → ON
VTHLCT : ON → OFF
0.2
0.0
0.0
−50
0
+50
+100
Operating ambient temperature Ta ( °C)
2.0
3.0
4.0
5.0
6.0
Input voltage VIN (V)
(Continued)
DS04-27253-3E
23
MB39C014
(Continued)
Power dissipation vs. Operating
ambient temperature
(With thermal via)
Power dissipation vs. Operating
ambient temperature
(without thermal via)
3000
Power dissipation PD (mW)
Power dissipation PD (mW)
3000
2632
2500
2000
1500
1053
1000
500
0
+50
+85
+100
Operating ambient temperature Ta ( °C)
24
2000
1500
980
1000
500
0
−50
2500
392
0
−50
0
+50
+85
+100
Operating ambient temperature Ta ( °C)
DS04-27253-3E
MB39C014
• Switching waveforms
VOUT : 20 mV/div
VLX : 2.0 V/div
Ta = +25 °C
VIN = 3.7 V
VOUT = 2.5 V
IOUT = 800 mA
ILX : 500 mA/div
1 µs/div
DS04-27253-3E
25
MB39C014
• Startup waveform
VCTL : 5.0 V/div
ILX : 500 mA/div
Ta = +25 °C
VIN = 3.7 V
VOUT = 2.5 V
IOUT = 0 A
VOUT : 1.0 V/div
10 ms/div
VREFIN Capacitor value =
0.1 µF
VCTL : 2.0 V/div
ILX : 500 mA/div
Ta = +25 °C
VIN = 3.7 V
VOUT = 2.5 V
IOUT = 0 A
VOUT : 1.0 V/div
20 µs/div
26
No VREFIN Capacitor
DS04-27253-3E
MB39C014
• Output waveforms at sudden load changes (0 mA ↔ 800 mA)
IOUT = 0 mA
IOUT = 800 mA
IOUT = 0 mA
VOUT : 100 mV/div
Ta = +25 °C
VIN = 3.7 V
VOUT = 2.5 V
10 µs/div
VREFIN Capacitor value =
0.1 µF
• Output waveforms at sudden load changes (100 mA ↔ 800 mA)
IOUT = 100 mA
IOUT = 800 mA
IOUT = 100 mA
VOUT : 100 mV/div
Ta = +25°C
VIN = 3.7 V
VOUT = 2.5 V
10 µs/div
DS04-27253-3E
VREFIN Capacitor value =
0.1 µF
27
MB39C014
■ APPLICATION CIRCUIT EXAMPLES
• APPLICATION CIRCUIT EXAMPLE 1
• An external voltage is input to the reference voltage external input (VREFIN) , and the VOUT voltage is set to
2.97 times the VOUT setting gain.
C2
4.7 µF
10
VIN
VDD
CPU
3 CTL
LX
VOUT
1
R5
1 MΩ
L1
2.2 µH
OUT
C1
4.7 µF
9
8 MODE
POWER
GOOD
L (OPEN) = 2.0 MHz
H = 3.2 MHz
APLI
5
6 FSEL
4 VREF
VOUT = 2.97 × VREFIN
7 VREFIN
DAC
GND
2
• APPLICATION CIRCUIT EXAMPLE 2
• The voltage of VREF pin is input to the reference voltage external input (VREFIN) by the dividing resistors.
The VOUT voltage is set to 2.5 V.
C2
4.7 µF
10
VDD
3 CTL
CPU
LX
VOUT
1
R5
1 MΩ
L1
2.2 µH
OUT
9
POWER
GOOD
5
VIN
C1
4.7 µF
8 MODE
L (OPEN) = 2.0 MHz
H = 3.2 MHz
R3 127.5 kΩ
(120 kΩ + 7.5 kΩ)
R4
300 kΩ
28
APLI
6 FSEL
4 VREF
7 VREFIN
GND
2
VOUT = 2.97 × VREFIN
VREFIN = R4
× VREF
R3 + R4
(VREF = 1.20 V)
300 kΩ
VOUT = 2.97 ×
× 1.20 V = 2.5 V
127.5 kΩ + 300 kΩ
DS04-27253-3E
MB39C014
• Application Circuit Example Components List
Component
Item
Part Number
Specification
Package
Vendor
VLF4012AT-2R2M
2.2 µH, RDC = 76 mΩ
SMD
TDK
MIPW3226D2R2M
2.2 µH, RDC = 100 mΩ
SMD
FDK
Ceramic
capacitor
C2012JB1A475K
4.7 µF (10 V)
2012
TDK
C2
Ceramic
capacitor
C2012JB1A475K
4.7 µF (10 V)
2012
TDK
R3
Resistor
RK73G1JTTD D 7.5 kΩ
RK73G1JTTD D 120 kΩ
7.5 kΩ
120 kΩ
1608
1608
KOA
R4
Resistor
RK73G1JTTD D 300 kΩ
300 kΩ
1608
KOA
R5
Resistor
RK73G1JTTD D
1 MΩ ± 0.5%
1608
KOA
L1
Inductor
C1
TDK : TDK Corporation
FDK : FDK Corporation
KOA : KOA Corporation
DS04-27253-3E
29
MB39C014
■ USAGE PRECAUTIONS
1. Do not configure the IC over the maximum ratings
lf the lC is used over the maximum ratings, the LSl may be permanently damaged.
It is preferable for the device to normally operate within the recommended usage conditions. Usage outside of
these conditions can adversely affect reliability of the LSI.
2. Use the devices within recommended operating conditions
The recommended operating conditions are the conditions under which the LSl is guaranteed to operate.
The electrical ratings are guaranteed when the device is used within the recommended operating conditions
and under the conditions stated for each item.
3. Printed circuit board ground lines should be set up with consideration for common
impedance
4. Take appropriate static electricity measures.
•
•
•
•
Containers for semiconductor materials should have anti-static protection or be made of conductive material.
After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.
Work platforms, tools, and instruments should be properly grounded.
Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.
5. Do not apply negative voltages.
The use of negative voltages below − 0.3 V may create parasitic transistors on LSI lines, which can cause
abnormal operation.
■ ORDERING INFORMATION
Part number
MB39C014PN-❏❏❏E1
Package
Remarks
10-pin plastic SON
(LCC-10P-M04)
Lead-free version
■ RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION
The LSI products of FUJITSU MICROELECTRONICS with “E1” are compliant with RoHS Directive, and has
observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), and
polybrominated diphenylethers (PBDE).
A product whose part number has trailing characters “E1” is RoHS compliant.
30
DS04-27253-3E
MB39C014
■ MARKING FORMAT (LEAD FREE VERSION)
XXXXX
X
INDEX
Lead-free version
■ LABELING SAMPLE (LEAD FREE VERSION)
Lead-free mark
JEITA logo
JEDEC logo
The part number of a lead-free product has the trailing
characters “E1”.
DS04-27253-3E
31
MB39C014
■ EVALUATION BOARD SPECIFICATION
The MB39C014 Evaluation Board provides the proper environment for evaluating the efficiency and other
characteristics of the MB39C014.
• Terminal information
Symbol
Functions
Power supply terminal.
In standard condition 3.1 V to 5.5 V*.
* When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices
with a standard output voltage (VOUT = 2.5 V) when VIN < 3.1 V, FUJITSU MICROELECTRONICS recommends changing the output capacity (C1) to 10 µF.
VIN
VOUT
Output terminal.
VCTL
Power supply terminal for setting the CTL terminal.
Use this terminal by connecting with CTL.
Direct supply terminal of CTL.
CTL = 0 V to 0.80 V (Typ.) : Shutdown
CTL = 0.95 V (Typ.) to VIN : Normal operation
CTL
MODE
TEST terminal
OPEN or GND
VREF
Reference voltage output terminal.
VREF = 1.20 V (Typ.)
External reference voltage input terminal.
When an external reference voltage is supplied, connect to this terminal.
VREFIN
Operating frequency range setting terminal.
FSEL = 0 V : 2.0 MHz operation
FSEL = VIN : 3.2 MHz operation*
* FUJITSU MICROELECTRONICS recommends changing the inductor to 1.5 µH.
FSEL
POWERGOOD
POWERGOOD output terminal.
"High" level output when if OUT voltage reaches 97% or more of output setting voltage.
PGND
Ground terminal.
Connect power supply GND to the PGND terminal next to the VOUT terminal.
AGND
Ground terminal.
• Startup terminal information
Terminal name
Condition
Functions
CTL
L : Open
H : Connect to VCTL
ON/OFF switch for the IC.
L : Shutdown
H : Normal operation
FSEL
L : Open
H : Connect to VCTL
Setting switch of FSEL terminal.
L : 2.0 MHz operation
H : 3.2 MHz operation.
• Jumper information
JP
Functions
JP1
Short-circuited in the layout pattern of the board (normally used shorted).
JP2
Normally used shorted (0 Ω)
32
DS04-27253-3E
MB39C014
• Setup and checkup
(1) Setup
(1) -1. Connect the CTL terminal to the VCTL terminal.
(1) -2. Connect the power supply terminal to the VIN terminal, and the power supply GND terminal to the
PGND terminal. (Example of setting power supply voltage : 3.7 V)
(2) Checkup
Supply power to VIN. The IC is operating normally if VOUT = 2.5 V (Typ).
DS04-27253-3E
33
MB39C014
• Component layout on the evaluation board (Top View)
CTL
JP2
PGND
VIN
VCTL
R5
SW1
C2
CTL
VOUT
FSEL
M1
C1
MODE
R3-1
R3-2 VREF
R1
AGND
Open
C6
R4
Short
L1
MODE
POWER_GOOD
MB39C014EVB-06
Rev.1.0
VREFIN
FSEL
Top Side (Component side )
1PJ
Bottom Side (Soldering side)
34
DS04-27253-3E
MB39C014
• Evaluation board layout (Top View)
DS04-27253-3E
Top Side(Layer1)
Inside GND(Layer2)
Inside GND(Layer3)
Bottom Side(Layer4)
35
MB39C014
• Connection diagram
IIN
VIN
C2
JP2
SW1
10
*
IOUT
L1
VDD
LX
3 CTL
VCTL
1
VOUT
R5
C1
MB39C014
CTL
SW1
JP1
OUT
*
9
R1
8 MODE
POWER
GOOD
MODE
SW1 *
POWER
GOOD
5
6 FSEL
FSEL
4 VREF
VREF
PGND
R3-1
R3-2
AGND
7 VREFIN
VREFIN
GND
R4
*
36
C6
2
Not mounted
DS04-27253-3E
MB39C014
• Component list
Component Part Name
Model Number
Specification
Package
Vendor
Remark
M1
IC
MB39C014PN
⎯
SON10
FML
L1
Inductor
VLF4012AT-2R2M
2.2 µH,
RDC = 76 mΩ
SMD
TDK
C1
Ceramic
capacitor
C2012JB1A475K
4.7 µF (10 V)
2012
TDK
C2
Ceramic
capacitor
C2012JB1A475K
4.7 µF (10 V)
2012
TDK
C6
Ceramic
capacitor
C1608JB1H104K
0.1 µF (50 V)
1608
TDK
R1
Resister
RK73G1JTTD D 1 MΩ
1 MΩ ± 0.5%
1608
KOA
R3-1
Resister
RR0816P-752-D
7.5 kΩ ± 0.5%
1608
SSM
R3-2
Resister
RR0816P-124-D
120 kΩ ± 0.5%
1608
SSM
R4
Resister
RR0816P-304-D
300 kΩ ± 0.5%
1608
SSM
R5
Resister
RK73G1JTTD D 1 MΩ
1 MΩ ± 0.5%
1608
KOA
SW1
Switch
⎯
⎯
⎯
⎯
Not
mounted
JP1
Jumper
⎯
⎯
⎯
⎯
Patternshorted
JP2
Jumper
RK73Z1J
(50 mΩ, Max) 1 A
1608
KOA
Note : These components are recommended based on the operating tests authorized.
FML : FUJITSU MICROELECTRONICS LIMITED
TDK : TDK Corporation
KOA : KOA Corporation
SSM : SUSUMU Co., Ltd
■ EV BOARD ORDERING INFORMATION
EV Board Part No.
EV Board Version No.
Remarks
MB39C014EVB-06
MB39C014EVB-06 Rev.1.0
SON10
DS04-27253-3E
37
MB39C014
■ PACKAGE DIMENSION
10-pin plastic SON
Lead pitch
0.50 mm
Package width ×
package length
3.00 mm × 3.00 mm
Sealing method
Plastic mold
Mounting height
0.75 mm MAX
Weight
0.018 g
(LCC-10P-M04)
10-pin plastic SON
(LCC-10P-M04)
3.00±0.10
(.118±.004)
2.40±0.10
(.094±.004)
10
6
INDEX AREA
3.00±0.10
(.118±.004)
1.70±0.10
(.067±.004)
0.40±0.10
(.016±.004)
1
5
1PIN CORNER
(C0.30(C.012))
0.50(.020)
TYP
0.25±0.03
(.010±.001)
0.05(.002)
0.00
(.000
C
38
+0.05
–0.00
+.002
–.000
0.75(.030)
MAX
0.15(.006)
)
2008 FUJITSU MICROELECTRONICS LIMITED C10004S-c-1-2
Dimensions in mm (inches).
Note: The values in parentheses are reference values.
DS04-27253-3E
MB39C014
■ CONTENTS
-
page
DESCRIPTION ................................................................................................................................. 1
FEATURES ....................................................................................................................................... 1
APPLICATIONS ............................................................................................................................... 1
PIN ASSIGNMENT .......................................................................................................................... 2
PIN DESCRIPTIONS ....................................................................................................................... 2
I/O PIN EQUIVALENT CIRCUIT DIAGRAM ................................................................................ 3
BLOCK DIAGRAM ........................................................................................................................... 4
FUNCTION OF EACH BLOCK ...................................................................................................... 6
ABSOLUTE MAXIMUM RATINGS ................................................................................................ 8
RECOMMENDED OPERATING CONDITIONS ......................................................................... 9
ELECTRICAL CHARACTERISTICS ............................................................................................. 10
TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS ............. 12
APPLICATION NOTES ................................................................................................................... 13
EXAMPLE OF STANDARD OPERATION CHARACTERISTICS ............................................ 18
APPLICATION CIRCUIT EXAMPLES .......................................................................................... 28
USAGE PRECAUTIONS ................................................................................................................ 30
ORDERING INFORMATION .......................................................................................................... 30
RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION ............................... 30
MARKING FORMAT (LEAD FREE VERSION) ........................................................................... 31
LABELING SAMPLE (LEAD FREE VERSION) .......................................................................... 31
EVALUATION BOARD SPECIFICATION .................................................................................... 32
EV BOARD ORDERING INFORMATION .................................................................................... 37
PACKAGE DIMENSION ................................................................................................................. 38
DS04-27253-3E
39
MB39C014
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome,
Shinjuku-ku, Tokyo 163-0722, Japan
Tel: +81-3-5322-3347 Fax: +81-3-5322-3387
http://jp.fujitsu.com/fml/en/
For further information please contact:
North and South America
FUJITSU MICROELECTRONICS AMERICA, INC.
1250 E. Arques Avenue, M/S 333
Sunnyvale, CA 94085-5401, U.S.A.
Tel: +1-408-737-5600 Fax: +1-408-737-5999
http://www.fma.fujitsu.com/
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE. LTD.
151 Lorong Chuan,
#05-08 New Tech Park 556741 Singapore
Tel : +65-6281-0770 Fax : +65-6281-0220
http://www.fmal.fujitsu.com/
Europe
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Pittlerstrasse 47, 63225 Langen, Germany
Tel: +49-6103-690-0 Fax: +49-6103-690-122
http://emea.fujitsu.com/microelectronics/
FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.
Rm. 3102, Bund Center, No.222 Yan An Road (E),
Shanghai 200002, China
Tel : +86-21-6146-3688 Fax : +86-21-6335-1605
http://cn.fujitsu.com/fmc/
Korea
FUJITSU MICROELECTRONICS KOREA LTD.
206 Kosmo Tower Building, 1002 Daechi-Dong,
Gangnam-Gu, Seoul 135-280, Republic of Korea
Tel: +82-2-3484-7100 Fax: +82-2-3484-7111
http://kr.fujitsu.com/fmk/
FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.
10/F., World Commerce Centre, 11 Canton Road,
Tsimshatsui, Kowloon, Hong Kong
Tel : +852-2377-0226 Fax : +852-2376-3269
http://cn.fujitsu.com/fmc/en/
Specifications are subject to change without notice. For further information please contact each office.
All Rights Reserved.
The contents of this document are subject to change without notice.
Customers are advised to consult with sales representatives before ordering.
The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose
of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS
does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating
the device based on such information, you must assume any responsibility arising out of such use of the information.
FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.
Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use
or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS
or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or
other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual
property rights or other rights of third parties which would result from the use of information contained herein.
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured
as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to
the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear
facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon
system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).
Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising
in connection with above-mentioned uses of the products.
Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by
incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current
levels and other abnormal operating conditions.
Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of
the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.
The company names and brand names herein are the trademarks or registered trademarks of their respective owners.
Edited: Sales Promotion Department
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