Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF830Z
Power MOSFET
4.5A, 500V, 1.5Ω, N-CHANNEL
POWER MOSFET

DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power
switching applications, such as switching regulators, switching
converters, solenoid, motor drivers and related drivers.

FEATURES
* RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* ESD Protected

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830ZL-TF3-T
UF830ZG-TF3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
UF830ZL-TF3-T

(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TF3: TO-220F
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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QW-R502-612.B
UF830Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
VDS
500
V
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
VDGR
500
V
Gate to Source Voltage
VGS
±30
V
Continuous
ID
4.5
A
Drain Current
Pulsed
IDM
18
A
Power Dissipation (TC = 25°C)
PD
38
W
Single Pulse Avalanche Energy Rating (Note 2)
EAS
300
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. VDD=50V, starting TJ =25°C, L=25mH, RG=25Ω, peak IAS=4.5A

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJC
RATINGS
62.5
3.31
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (Ta =25°C, unless otherwise specified.)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Current (Note 1)
Drain-Source Leakage Current
SYMBOL
BVDSS
VGS(TH)
ID(ON)
IDSS
TEST CONDITIONS
ID=250μA, VGS=0V
VGS=VDS, ID=250μA
VDS>ID(ON)×RDS(ON)MAX, VGS=10V
VDS= Rated BVDSS, VGS=0V
VDS=0.8×Rated BVDSS
VGS=0V, TJ= 125°C
VGS=±30V
MIN
500
2.0
4.5
Gate-Source Leakage Current
IGSS
Static Drain-Source On-State Resistance
RDS(ON)
ID=2.5A, VGS=10V
(Note 2)
Forward Transconductance (Note 1)
gFS
VDS≥10V, ID=2.7A
2.5
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=250V, ID≈4.5A
RGS=12Ω, RL =54Ω (Note 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VGS=10V, ID=4.5A
VDS=0.8×Rated BVDSS
Gate-Source Charge
QGS
IG(REF)=1.5mA (Note 3)
Gate-Drain Charge
QGD
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. MOSFET Switching Times are Essentially Independent of Operating Temperature.
3. Gate Charge is Essentially Independent of Operating Temperature.
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TYP MAX UNIT
V
4.0
V
A
25
μA
1.3
4.2
10
15
33
16
22
3.5
11
600
100
20
250
μA
±800
nA
1.5
Ω
17
23
53
23
32
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
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
Power MOSFET
INTERNAL PACKAGE INDUCTANCE
PARAMETER
SYMBOL
Internal Drain Inductance
Measured from the contact screw on tab to center of die
LD
Measured from the drain lead(6mm from package) to center of die
Internal Source Inductance
Measured from the source lead(6mm from header) to source bond pad
LS
Remark: Modified MOSFET symbol showing the internal devices inductances as below.

MIN
TYP
MAX UNIT
3.5
4.5
nH
nH
7.5
nH
SOURCE TO DRAIN DIODE SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Source to Drain Diode Voltage
VSD
TJ=25°C, ISD=4.5A, VGS=0V
(Note 1)
Continuous Source to Drain Current
ISD
Note 2
Pulse Source to Drain Current
ISDM
Reverse Recovery Time
tRR
TJ=25°C, ISD=4.5A, dI/dt=100A/μs
180
Reverse Recovery Charge
QRR
TJ=25°C, ISD=4.5A, dI/dt=100A/μs
0.96
NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.
2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.
TYP
350
2.2
MAX UNIT
1.6
V
5.5
18
760
4.3
A
A
ns
μC
D
G
S
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
L
VARY tp TO OBTAIN
REQUIRED PEAK IAS
+
RG
VDD
VGS
DUT
0V
tp
IAS
0.01Ω
FIG 1. Unclamped Energy Test Circuit
FIG 2. Unclamped Energy Waveforms
RL
+
RG
VDD
DUT
VGS
FIG 3. Switching Time Test Circuit
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
tON
tOFF
tDLY(ON)
tDLY(OFF)
tR
VDS
tF
90%
90%
10%
0
10%
90%
VGS
0
50%
10%
PULSE WIDTH
50%
FIG 4. Resistive Switching Waveforms
FIG 5. Gate Charge Test Circuit
FIG 6. Gate Charge Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS

Normalized Power Dissipation vs. Case
Temperature
1.2
Maximum Contionuous Drain Current vs. Case
Temperature
5
1.0
4
0.8
3
0.6
2
0.4
1
0.2
0
0
150
100
50
Case Temperature, TC (°C)
0
Normalized Maximum Transient Thermal
Impedance
25
50
100
125
75
Case Temperature,TC (°C)
150
Forward Bias Safe Operating Area
100
Operation in This Region
is Limited by rDS (on)
1
0.5
10
0.2
0.1
0.1
PDM
0.05
t1
0.02
0.01
1
t2
Single pulse *Notes:
Duty Factor, D=t1/t2
Peak TJ =PDM×ZθJC×RθJC +TC
0.01
10-5
1
10-4
10-3
10-2
10-1
Rectangular Pulse Duration, t1 (s)
0.1
10
Output Characteristics
1
Pulse Duration=80μs
Duty Cycle = 0.5% Max
VGS=5.5V
VGS=10V
VGS=5.5V
3
2
VGS=4.5V
2
VGS=10V
VGS=5.0V
Pulse Duration=80μs
Duty Cycle = 0.5% Max
3
103
4
VGS=5.0V
4
10
102
Drain to Source Voltage, VDS (V)
Saturation Characteristics
5
6
5
TC=25°C
TJ=Max Rated
Single Pulse
10
μs
10
0μ
s
1m
10 s
ms
10
0m
s
DC
VGS=4.5V
1
1
VGS=4.0V
0
0
50
100
150
200
250
300
Drain to Source Voltage, VDS (V)
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VGS=4.0V
0
0
4
2
6
8
Drain to Source Voltage, VDS (V)
10
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
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Drain to Source on Resistance vs.
Gate Voltage and Drain Current
Transfer Characteristics
Drain to Source on Resistance, rDS (ON) (Ω)
Drain to Source Current, IDS (ON) (A)
5
Pulse Duration=80μs
Duty Cycle = 0.5% Max
4 VDS>ID(ON)×rDS(ON)MAX
3
TJ = 125°C
2
TJ = 25°C
1
TJ = -40°C
0
2
1
0
3
4
5
6
7
10
Pulse Duration=80μs
Duty Cycle = 0.5% Max
8
6
VGS=10V
4
VGS=20V
2
0
0
4
2.2
Normalized Drain to Source on Resistance vs.
Junction Temperature
Pulse Duration=80μs
Duty Cycle = 0.5% Max
1.8 VGS =10V, ID=2.5A
1.4
1.0
0.6
0.2
-60 -40 -20
0
20
40
60
1.15
1.05
0.95
0.85
0.75
-40 -20
80 100 120 140
Capacitance vs. Drain to Source Voltage
Transconductance, gFS (S)
Capacitance, C (pF)
1200
CISS
COSS
400
CRSS
20
30
30
10
Drain to Source Voltage, VDS (V)
50
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20
40
60
80 100 120 140 160
Transconductance vs. Drain Current
5
VGS=0V, f=1MHz
CISS=CGS+CGD
C =C
1600 RSS GD
COSS=CDS+CGS
1
0
Junction Temperature, TJ (°C)
2000
0
20
16
Normalized Drain to Source Breakdown Voltage vs.
Junction Temperature
1.25
ID=250μA
Junction Temperature, TJ (°C)
800
12
Case Temperature, TC (°C)
Normalized Drain to Source Breakdown
Voltage
Normalized Drain to Source on Resistance
Gate to Source Voltage, VGS (V)
8
Pulse Duration=80μs
Duty Cycle = 0.5% Max
TJ= -40°C
4
TJ= 25°C
3
TJ= 125°C
2
1
0
0
1
2
3
4
5
Drain Current, ID (A)
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)

Gate to Source Voltage vs. Gate Charge
Source to Drain Diode Voltage
20
Pulse Duration=80μs
100 Duty Cycle = 0.5% Max
Gate to Source Voltage, VGS (V)
Source to Drain Current, ISD (A)
2
5
2
TJ=125°C
10
TJ=25°C
5
2
1
0
1
2
3
4
Source to Drain Voltage, VSD (V)
ID=4.5A
15
VDS=100V
VDS=250V
10
VDS=400V
5
0
0
8
24
16
Gate Charge, QG (nC)
32
40
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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